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IEEE Journal of Quantum Electronics

On the intersubband optical bistability in semiconductor quantum wells: the influence of the permanent dipole moment

Z. Ikonić, V. Milanović

Published Jan 1, 1995• 11 citations
Publisher

Abstract

Some interesting features of the intrinsic optical bistability, based on intersubband transitions in asymmetric semiconductor quantum wells, are analyzed within the two-level model. In particular, the excitation-induced levels shifting, on which the bistability relies, is found to be significantly influenced by the exchange-correlation potential, thus requiring self-consistent modeling-the simple charge separation dipole model is not accurate enough. The optical influence of the permanent dipole moment, characterizing bound states in asymmetric quantum wells, is also analyzed. This is found to have some beneficial and some adverse consequences on bistability, both of which may be quite important in realistic structures.>

DOI
10.1109/3.400405

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Some interesting features of the intrinsic optical bistability, based on intersubband transitions in asymmetric semiconductor quantum wells, are analyzed within the two-level model. In particular, the excitation-induced levels shifting, on which the bistability relies, is found to be significantly influenced by the exchange-correlation potential, thus requiring self-consistent modeling-the simple charge separation dipole model is not accurate enough. The optical influence of the permanent dipole moment, characterizing bound states in asymmetric quantum wells, is also analyzed. This is found to have some beneficial and some adverse consequences on bistability, both of which may be quite important in realistic structures.>
The influence of permanent dipole moments of quantized states on intersubband second harmonic generation based on quantum-interference induced transparency in semiconductor quantum wells is explored using the harmonic balance method. The permanent moments are found to be quite important: they affect the transparency condition, especially at larger pump intensities. Hence, both the conversion efficiency and the optimal interaction path length change significantly when accounting for the permanent moments, and the conversion efficiency is reduced.
An intrinsic optical bistability in a double quantum well is described theoretically. The effect is based on the resonant tunneling of electrons against the electric-field force (the counterfield electron transfer) and is driven and controlled by far-ir radiation exciting an intersubband transition. The theory relies on the density-matrix technique and takes into account optical intersubband excitation, interwell tunneling, the relaxation of populations and polarizations, and the mean-field effects of the transferred electron charge (shifts of the levels and changes of matrix elements). Hysteresis-type curves are obtained for both the charge-transfer probability and the optical absorption as functions of the light intensity. The theory shows the effect to be readily observable under realistic conditions, with the exciting-light intensity as low as 50 W/cm2{\mathrm{cm}}^{2}cm2.
Abstract A novel mechanism for intrinsic optical bistability in quantum wells is proposed. In suitable structures the intrinsic electric field generated by optical excitation leads to the lowering of some interband transition energies. Therefore, increasing‐absorption bistability occurs for proper choice of operation conditions, without considering excitonic or many‐body effects. A numercal study of a InAs–GaSb quantum well is carried out and switch‐on intensities of the order of 102 kW/cm2 for a nanosecond response time are found.
We present self-consistent calculations of the energy levels in an asymmetric coupled quantum-well structure coupled to a CO2 laser source which is nearly resonant with an intersubband transition. Solving Schrödinger’s and Poisson’s equations concurrently with a set of rate equations, it is shown that intrinsic optical bistability can be achieved. The bistability arises from charge transfer and a subsequent, self-consistent shift of the energy levels which feeds back to the absorption rate. Using realistic parameters, an on-off intensity ratio of 4:1 at switching powers of a few 100 kW/cm2 is predicted at about 10-μm wavelength.
We investigate optical bistability in intersubband transitions of an asymmetric semiconductor quantum well structure that has equidistant transitions between three subbands of the system and is placed in a unidirectional cavity. The system is simultaneously coupled by a fundamental field and its second harmonic. The second harmonic field acts as a control field and significantly influences the optical bistability. In addition, the two-color coherent control of optical bistability by the relative phase of the fundamental and the second harmonic fields is shown. The influence of the electronic cooperation parameter on the OB behavior is also discussed. This investigation may be used for optimizing and controlling the optical switching process in the SQW solid-state system, which is much more practical than that in the atomic system because of its flexible design and the controllable interference strength.