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Acta Physica Polonica A

Optical Bistability Due to Photo-Induced Charge Transfer in a Type-II GaAs/AlAs Quantum Well

R. Teissier, Richard Planel, F. Mollot

Published Oct 1, 1992• 0 citations
Publisher

Abstract

We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure.Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers.The transition occurs with the alignment of electronic Γ and Χ states due to optical pumping, and no external voltage bias is needed.

DOI
10.12693/aphyspola.82.656

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We present a bistability of low temperature photoluminescence in a n-i-n type-II GaAs/AlAs quantum heterostructure.Spectral analysis and electrical measurements indicate that the two states correspond to hole accumulation in different layers.The transition occurs with the alignment of electronic Γ and Χ states due to optical pumping, and no external voltage bias is needed.
We present here the first observation of quasisteady state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type II heterostructures. Using pump-probe spectroscopy we observed deep modulation, ΔT ~ 0.5 (Δα =−50,000 cm−1), due to a >40-meV blue shift and bleaching of the heavy hole exciton absorption peak. In addition, a blue shift of up to ~10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.
Abstract : In this paper we describe a detailed study of the complete time evolution of the optical nonlinearities of type-11 GaAs/AlAs quantum wells using nanosecond and femtosecond pump/probe spectroscopy. We explain these nonlinearities by solving the generalized Wannier equation for the case of a type-II quantum-well structure. In contrast to the usual type-I quantum-wells, we observe different shifts and saturations of light- and heavy-hole excitons as well as the absence of gain. The dominant effects are a blue shift and saturation of the heavy-hole (HH) exciton.
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An intrinsic optical bistability in a double quantum well is described theoretically. The effect is based on the resonant tunneling of electrons against the electric-field force (the counterfield electron transfer) and is driven and controlled by far-ir radiation exciting an intersubband transition. The theory relies on the density-matrix technique and takes into account optical intersubband excitation, interwell tunneling, the relaxation of populations and polarizations, and the mean-field effects of the transferred electron charge (shifts of the levels and changes of matrix elements). Hysteresis-type curves are obtained for both the charge-transfer probability and the optical absorption as functions of the light intensity. The theory shows the effect to be readily observable under realistic conditions, with the exciting-light intensity as low as 50 W/cm2{\mathrm{cm}}^{2}cm2.