Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Quantum Optoelectronics

Functionally All-Optical Bistable p-i-p-i-n Device with Asymmetric GaAs/AlAs Coupled Quantum Well Absorption Layers and an AlAs Resistive Layer

Yasunori Tokuda, Yuji Abe, Noriaki Tsukada

Published Jan 1, 1993• 0 citations
Publisher

Abstract

Optical bistabilities have been receiving considerable attention for potential application in future ultra-high performance information processing. Especially an all optical bistable function, which can be achieved at low input power, seems to be very promising.1
DOI
10.1364/qo.1993.qwb.2

Related papers

Optical Bistability and Modulation in Semiconductor Etalons

H. M. Gibbs, S. L. McCall, Thirumalai Venkatesan +3 more

Optical signal processing using all-optical circuitry is an increasingly attractive goal with the recent progress in long- lived light sources, high quantum efficiency detectors, and low- loss high-bandwidth optical fibers. Devices which permit one light beam to control another or which provide an optical memory afford a capability essential to the success of all-optical logic systems. Much progress has been made toward practical bistable1 devices since the first observation2 of optical bistability in sodium vapor. (By optical bistability we refer to devices containing no inverted medium, so that bistable lasers3 are explicitly excluded.) The most practical device so far, a semiconductor etalon consisting of 4 μm of GaAs between 0.2 μm of Al0.42Ga0.53As with R = 0.9 coatings, is described herein.

Integrated and Guided-Wave Optics•Jan 1, 1980•1 citation

High-Power Operation of Non-Biased Optical Bistable Devices Using Multiple Quantum Well pinip-Diodes

Oh Kee Kwon, K.-S. Lee, Y.-S. Lim +2 more

International Conference on Solid State Devices and Materials (SSDM)•Sep 18, 1997•0 citations

Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength

F. Jeannès, Gilles Patriarche, Rozette Azoulay +3 more

We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.

IEEE Photonics Technology Letters•Apr 1, 1996•12 citations

Dual Wavelength Electro-Optical Bistability in an Asymmetric Self-Electro-Optic Effect Device

Kenji Kawashima, Kenzo Fujiwara, Kikuo Kobayashi Sano

We have demonstrated bistable operation of an asymmetric self-electro-optic effect device (A-SEED) which consists of a GaAs/AlAs superlattice and an InGaAs/AlGaAs multiple quantum well. The A-SEED is driven by two illuminations with widely separated wavelengths, one of which is transparent to the GaAs substrate. Advantages of the A-SEED for applications to optically bistable transmission devices are discussed with emphasis on negligible crosstalk between the signal beam and the control beam.

Japanese Journal of Applied Physics•Mar 1, 1992•2 citations

All-optical bistable devices based on resonant nonlinearities in multiple quantum wells

J. L. Oudar, Bruno G. Sfez, Robert Kuszelewicz

Nonlinear Optics•Jan 1, 1992•0 citations

All-optical bistable device with a GaInAsP DFB structure

Tetsuya MIZUMOTO

•Oct 1, 1997•0 citations
Optical signal processing using all-optical circuitry is an increasingly attractive goal with the recent progress in long- lived light sources, high quantum efficiency detectors, and low- loss high-bandwidth optical fibers. Devices which permit one light beam to control another or which provide an optical memory afford a capability essential to the success of all-optical logic systems. Much progress has been made toward practical bistable1 devices since the first observation2 of optical bistability in sodium vapor. (By optical bistability we refer to devices containing no inverted medium, so that bistable lasers3 are explicitly excluded.) The most practical device so far, a semiconductor etalon consisting of 4 μm of GaAs between 0.2 μm of Al0.42Ga0.53As with R = 0.9 coatings, is described herein.
We report on low-power optical bistability in a vertical cavity structure at 1.55-μm wavelength due to the bandgap resonant dispersive optical nonlinearity of InGaAsP. In this structure, a GaAs-AlAs Bragg reflector grown on GaAs and the nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror. This device shows interesting characteristics for optical switching applications at fiber communication wavelengths, such as a switching contrast higher than 8:1 in the reflective mode and a bistability threshold power as low as 0.6 mW. True steady-state memory effect is observed with continuous-wave input, and the device switching time is in the ns range.