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Optics Letters

Converting Eu^3+ between defect sites in BaFCl for persistent spectral hole burning

Songfeng Li, G. K. Liu, Wei Zhao

Published Jun 15, 1999• 13 citations
Publisher

Abstract

Persistent spectral hole burning (PSHB) is demonstrated in the (7)F(0)-->(5)D(0) optical transition of Eu(3+) doped into crystals of BaFCl. For Eu(3+) ions at two different lattice sites, persistent holes can be burned at temperatures below 77 K. The characteristics of the hole-burning process suggest that the observed PSHB effect is due to laser-excitation-induced site-to-site conversion. One type of Eu(3+) site is converted into another type of defect site. This process is not optically reversible, and holes can be erased only when the temperature increases to 150 K.

DOI
10.1364/ol.24.000838

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Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.

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Applied Physics Letters•Mar 30, 1998•7 citations
Persistent spectral hole burning (PSHB) is demonstrated in the (7)F(0)-->(5)D(0) optical transition of Eu(3+) doped into crystals of BaFCl. For Eu(3+) ions at two different lattice sites, persistent holes can be burned at temperatures below 77 K. The characteristics of the hole-burning process suggest that the observed PSHB effect is due to laser-excitation-induced site-to-site conversion. One type of Eu(3+) site is converted into another type of defect site. This process is not optically reversible, and holes can be erased only when the temperature increases to 150 K.
By using an Ar + ion laser, a tunable Rh 6 G dye laser (linewidth 0.5 cm −1 ) pumped by the second harmonic of a YAG:Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu 3+ -doped Y 2 SiO 5 crystal. Persistent spectral hole burning (PSHB) are observed in the Eu 3+ ions spectral lines ( 5 D 0 − 7 F 0 transition) in the crystal at the temperature of 16 K. For 15 mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62 nm and at 579.82 nm are detected and the holes can remain for a long time, more than 10 h.
By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.
Persistent spectral hole burning (PSHB) is expected to be a mechanism for future ultrahigh density multi-wavelength optical memory whose density can be higher than the conventional optical memory by 10 to 104 times. PSHB optical memories are mainly studied for dye-doped polymers, but the hole burning temperatures for such poleymers are limited to tempertures lower than 140 K [1], Recently room-temperature PSHB has been observed in Sm2+ doped halide crystals [2-4] and glasses [5], and borate glasses [6]. The halide crystals are not bulk single crystals but polycrystals.
Persistent spectral hole burning (PSHB) was discovered in organic molecular system in 1974[1]. Five years later, PSHB in inorganic materials was discovered in NaF by R. M. Macfarlane et al [2]. In 1985, A. Winnacker et al [3] first observed photon gated spectral hole burning in BaFCl: Sm2+ at 2K. Hole burning(HB) is useful in high resolution spectroscopy. It is also of crucial importance for the application to frequency domain optical storage. The storage density is proportional to the ratio of inhomogeneous linewidth(Γi) to the homogeneous linewidth(Γh), N(= Γi/Γh). The inhomogeneous linewidth of 5D0-TF0 transition of Sm2+ is 16GHz and the hole width is 25MHz in BaFCl at 2K[3]. For this material, the inhomogeneous linewidth changes only moderately with the temperature; On the other hand, the homogeneous linewidth increases rapidly as the temperature rises. Then, a small value of N(~2) can be estimated when HB temperature is raised to 77K. That means, it is difficult to burn a hloe in the inhomogeneous line in BaFCl:Sm2+ at 77K. To maintain a reasonable storage capacity or to study HB at a quite high temperature, a large inhomogeneous linewidth is in great request.
Persistent spectral hole burning has been observed on the zero-phonon lines of the main site and several perturbed sites of Eu2+{\mathrm{Eu}}^{2+}Eu2+ in CaS:Eu single crystals. Hole burning occurs by two-step photoionization, can be strongly gated with IR irradiation, and takes place by excited-state absorption from the metastable 4f65d{4f}^{6}5d4f65d excited state to the conduction band followed by electron transport to Eu3+{\mathrm{Eu}}^{3+}Eu3+ centers which are the dominant traps. A complex hole structure consisting of a narrow feature (200 MHz), and broader features ($\ensuremath{\approx}5$ and $\ensuremath{\approx}100\mathrm{GHz}$) is observed. A mechanism is described for the occurrence of these unusually broad features. Time-varying internal electric fields which occur during the hole burning due to photoionization and trapping can lead to burning of holes at frequencies non-resonant with that of the laser. In addition, a mechanism for hole erasure, tunneling between Eu ions, is demonstrated. This mechanism is identified from the frequency dependence of the hole erasure which follows the Eu2+{\mathrm{Eu}}^{2+}Eu2+ absorption, and the linear dependence of the photoconductivity and hole erasure efficiency on irradiation power, both of which indicate erasure in a single-photon process.