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Semiconductor Science and Technology

Non-perturbative optical response of a single quantum dot in a fluctuating environment

Aleksandar Janković, R. Ferreira, G. Bastard

Published Feb 27, 2004• 0 citations
Publisher

Abstract

We present a model which treats non-perturbatively the effects of both dipolar coupling and reservoir fluctuations on the interband optical response of a single quantum dot. We are able to study the transition to a Rabi-like situation with increasing excitation power. The incorporation of an energy relaxation process (for instance, due to polaron relaxation among the dot polaron levels) in a three-level system allows us to simulate both photoluminescence (PL) and photoluminescence excitation experiments. The PL spectrum displays one or a few lines depending on the excitation intensity, relaxation efficiency and reservoir fluctuation rates.

DOI
10.1088/0268-1242/19/4/004

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Optical response of a 3‐level “fluctuating” single quantum dot

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We present a model which treats non-perturbatively the effects of both the dipolar coupling and reservoir fluctuations on the interband optical response of a 3-level single quantum dot. We are able to study the transition to a Rabi-like situation with increasing excitation power. Our three level system allows us to simulate both PL and photoluminescence excitation (PLE) experiments.The PL spectrum displays one or a few lines depending on the excitation intensity, relaxation efficiency and reservoir fluctuation rates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics•Feb 1, 2004•1 citation

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Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by photoluminescence experiments in single QDs under non-resonant excitation [1]. In this configuration, the residual excitation of the QD environment that acts as a fluctuating reservoir for spectral diffusion [2] reduces the coherence time and prevents from the realization of single photons sources with high degree of indistinguishability. Therefore, strictly resonant excitation of the fundamental interband transition [3,4,5] is essential to reduce the dephasing processes and get high-performance single photon sources. In this paper, we report on the resonant Rayleigh scattering (RRS) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [3]. Strikingly, the most frequent case (98%) corresponds to the absence of resonance in the RRS spectrum, resulting in QDs non-coupled to light. We show that resonant fluorescence of the exciton is restored for all the QDs when an additional non-resonant laser is applied at extremely weak power ranges (few nWs). A clear photon anti-bunching under strictly resonant excitation proves that the optically gated RRS spectrum is dominated by resonant fluorescence of the exciton. A complete study will be presented such as the switching dynamics of the RRS and its power dependence with the resonant and non-resonant lasers. The phenomenon is interpreted within a simple model where the exciton resonant fluorescence is quenched by Coulomb blockade after tunneling of a hole in the QD from a structural deep level. The additional non-resonant laser suppresses Coulomb blockade by switching back the QD into a neutral state. We conclude that the optical response of the QD remains affected by its environment even in case of coherent resonant pumping. An optical control of the QD environment is essential to bring the QD from a "dark" to a "bright" state under strictly resonant excitation. References [1] P. Michler et al., Science 290, 2282 (2000) [2] A. Berthelot et al., Nature Physics 2, 759 (2006) [3] A. Muller et al., PRL 99, 187402 (2007) [4] R. Melet et al., PRB 78, 073301 (2008) [5] S. Ates et al., PRL 103, 167402 (2009)

•Sep 12, 2011•0 citations

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Strong-field nonlinear response of quantum dots

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Summary form only given. Recent studies have been carried out on the resonant response from single interface fluctuation quantum dots. Such a discrete-level model yields unique signatures under strong resonant driving, including Rabi oscillations. To date, Rabi oscillations (excluding microcavity studies) have only been reported for two-dimensional excitonic systems. We present data showing the nonlinear response from an ensemble of interface fluctuation quantum dots. This data is consistent with Rabi oscillations for moderate driving fields (that is, for /spl Theta//spl sim/2/spl pi/, where /spl Theta/ is the pulse area). The sample under investigation is a single thin (62 /spl Aring/) GaAs/Al/sub 0.3/Ga/sub 0.7/As quantum well grown with growth interruptions and is studied at 5 K. The laser is tuned to the lower energy excitonic resonance, corresponding to an inhomogeneously broadened distribution of excitons localized due to well width fluctuations. The time-integrated PL is collected with a spectrometer tuned 2.5 meV below the excitonic resonance.

Quantum Electronics and Laser Science Conference•Jan 1, 2000•0 citations
We present a model which treats non-perturbatively the effects of both dipolar coupling and reservoir fluctuations on the interband optical response of a single quantum dot. We are able to study the transition to a Rabi-like situation with increasing excitation power. The incorporation of an energy relaxation process (for instance, due to polaron relaxation among the dot polaron levels) in a three-level system allows us to simulate both photoluminescence (PL) and photoluminescence excitation experiments. The PL spectrum displays one or a few lines depending on the excitation intensity, relaxation efficiency and reservoir fluctuation rates.
We present a model which treats non-perturbatively the effects of both the dipolar coupling and reservoir fluctuations on the interband optical response of a 3-level single quantum dot. We are able to study the transition to a Rabi-like situation with increasing excitation power. Our three level system allows us to simulate both PL and photoluminescence excitation (PLE) experiments.The PL spectrum displays one or a few lines depending on the excitation intensity, relaxation efficiency and reservoir fluctuation rates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by photoluminescence experiments in single QDs under non-resonant excitation [1]. In this configuration, the residual excitation of the QD environment that acts as a fluctuating reservoir for spectral diffusion [2] reduces the coherence time and prevents from the realization of single photons sources with high degree of indistinguishability. Therefore, strictly resonant excitation of the fundamental interband transition [3,4,5] is essential to reduce the dephasing processes and get high-performance single photon sources. In this paper, we report on the resonant Rayleigh scattering (RRS) of the exciton in single InAs/GaAs QDs embedded in a planar microcavity [3]. Strikingly, the most frequent case (98%) corresponds to the absence of resonance in the RRS spectrum, resulting in QDs non-coupled to light. We show that resonant fluorescence of the exciton is restored for all the QDs when an additional non-resonant laser is applied at extremely weak power ranges (few nWs). A clear photon anti-bunching under strictly resonant excitation proves that the optically gated RRS spectrum is dominated by resonant fluorescence of the exciton. A complete study will be presented such as the switching dynamics of the RRS and its power dependence with the resonant and non-resonant lasers. The phenomenon is interpreted within a simple model where the exciton resonant fluorescence is quenched by Coulomb blockade after tunneling of a hole in the QD from a structural deep level. The additional non-resonant laser suppresses Coulomb blockade by switching back the QD into a neutral state. We conclude that the optical response of the QD remains affected by its environment even in case of coherent resonant pumping. An optical control of the QD environment is essential to bring the QD from a "dark" to a "bright" state under strictly resonant excitation. References [1] P. Michler et al., Science 290, 2282 (2000) [2] A. Berthelot et al., Nature Physics 2, 759 (2006) [3] A. Muller et al., PRL 99, 187402 (2007) [4] R. Melet et al., PRB 78, 073301 (2008) [5] S. Ates et al., PRL 103, 167402 (2009)
Single photon emission is one of the most striking optical properties of semiconductor quantum dots (QDs), and the corresponding photon anti-bunching effect was observed by photoluminescence experiments in single QDs under non-resonant excitation [1], and more recently under strictly resonant excitation of the fundamental interband transition [2,3]. This configuration minimizes the residual excitation of the QD environment that acts as a fluctuating reservoir for spectral diffusion [4], and allows the generation of indistinguishable photons [3]. In this paper, we report on the resonant fluorescence of the neutral exciton in single InAs/GaAs QDs embedded in a planar microcavity [2]. We show in figure 1(a) the resonant Rayleigh scattering (RRS) spectrum as a function of the laser detuning with the neutral exciton line. We observe two Lorentzian lines of width 4μeV, separated by 9μeV and corresponding to two linear orthogonal polarizations, as expected for the fine structure splitting. We show in figure 1(b) a clear photon anti-bunching under strictly resonant excitation that proves that the RRS spectrum is dominated by resonant fluorescence of the neutral exciton. This situation is only rarely observed. The most frequent case corresponds to no resonance in the RRS spectrum and to a doublet in the non-resonant photoluminescence (PL) spectrum as shown in figure 2(a). The two lines are identified as the neutral and charged excitons by auto- and cross-correlation measurements of the g(2)(τ) function, as illustrated in figure 2(b). Strikingly, we observe the charged exciton line in the PL excitation spectrum of the neutral exciton line (figure 2(c)). This effect reveals the existence of residual charge carriers in the QD environment even under strictly resonant excitation. This favors incoherent population transfer between the charged and neutral excitons that competes with the coherent RRS effect and most frequently suppresses the resonant fluorescence of the neutral exciton. We conclude that the optical response of the QD remains affected by its environment even in case of coherent resonant pumping. [1] P. Michler, A. Kiraz, C. Becher, W. V. Schoenfeld, P. M. Petroff, L. Zhang, E. Hu, and A. Imamoglu, Science 290, 2282 (2000) [2] A. Muller, E. B. Flagg, P. Bianucci, X. Y. Wang, D. G. Deppe, W. Ma, J. Zhang, G. J. Salamo, M. Xiao, and C. K. Shih, Phys. Rev. Lett. 99, 187402 (2007) [3] S. Ates, S. M. Ulrich, S. Reitzenstein, A. Löffler, A. Forchel, and P. Michler, Phys. Rev. Lett. 103, 167402 (2009) [4] A. Berthelot, I. Favero, G. Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, R. Ferreira, and J. M. Gérard, Nature Physics 2, 759 (2006)
We provide a theoretical study for the dynamical behavior of two-photon Rabi oscillations in two coupled quantum dots. Each dot is a three-level quantum system (ground, one-exciton, and biexciton states). We describe the optical dynamics within the density matrix formalism framework. The two-photon Rabi oscillations are found to be significantly affected by the strength of the interdot dipolar interaction. Using a detuned laser pulse with an exciton state of the driven quantum dot in our numerical simulations, a direct coherent excitation between the biexciton states can be established, but whether Rabi oscillations can be observed depend mainly on the strength of the dipolar interaction and bandwidth of the excitation laser. When the strength of the dipolar coupling is less than the excitation laser bandwidth, the time-dependent populations of the various two biexciton states of the system exhibit coherent oscillations with several frequencies. However, as we increase the dipolar coupling strength, the population transfer between the quantum dots levels amazingly becomes forbidden, and the excitation gets trapped at the initial state. The reduction of the influence of the dipolar interaction leads to a manipulation of two-photon Rabi oscillation in an ultrashort timescale (∼ps), opening possibilities to achieve ultrafast quantum state control and quantum logic gate generation.
Summary form only given. Recent studies have been carried out on the resonant response from single interface fluctuation quantum dots. Such a discrete-level model yields unique signatures under strong resonant driving, including Rabi oscillations. To date, Rabi oscillations (excluding microcavity studies) have only been reported for two-dimensional excitonic systems. We present data showing the nonlinear response from an ensemble of interface fluctuation quantum dots. This data is consistent with Rabi oscillations for moderate driving fields (that is, for /spl Theta//spl sim/2/spl pi/, where /spl Theta/ is the pulse area). The sample under investigation is a single thin (62 /spl Aring/) GaAs/Al/sub 0.3/Ga/sub 0.7/As quantum well grown with growth interruptions and is studied at 5 K. The laser is tuned to the lower energy excitonic resonance, corresponding to an inhomogeneously broadened distribution of excitons localized due to well width fluctuations. The time-integrated PL is collected with a spectrometer tuned 2.5 meV below the excitonic resonance.