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Optics Letters

Optical bistability induced by mirror absorption: measurement of absorption coefficients at the sub-ppm level

Kyungwon An, Bryndol Sones, Christopher M. Fang-Yen, Ramachandra Rao Dasari, Michael S. Feld

Published Sep 15, 1997• 55 citations
Publisher

Abstract

We have observed optical bistability caused by absorption-induced thermal expansion of mirrors forming a Fabry-Perot interferometer. From the resulting anomalous transmission line shapes, absorption coefficients of the mirror coatings as low as 0.2parts in 10(6) (ppm) have been successfully measured.
DOI
10.1364/ol.22.001433

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We study the nonlinear optical bistability and multistability of a nonlinear ferroelectric (FE) Fabry-Perot (FP) interferometer assumed coated with partial dielectric mirrors on its interfaces. The FE material is considered to have an intensity-dependent refractive index where the third order nonlinear susceptibility χ ilmn (3) acts like Kerr coefficient. The nonlinear response of the FE medium is modeled by the Landau-Khalatnikov (LK) dynamical equation. Within a single frequency approximation, the nonlinear wave equation is written in terms of polarization P rather than the electric field E as the dependent variable. The resulting nonlinear polarization equation is numerically integrated across the FP film using the fourth order Runge-Kutta method. The behavior of the resulting polarization and transmission as a function of the field input intensity is investigated.
Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.