We measured the quality factor (Q) and hence the losses of thin film superconducting Nb coplanar waveguide resonators fabricated with processes and materials similar to those used for Josephson effect qubits, where such losses can cause significant decoherence. Intrinsic Q-values range from several thousand to almost 106 depending on the process details. Reactive ion etching appears to reduce the resonator Q-values and the lift-off process can also degrade the Q-value for some resists. The resistivity of the Si substrates affects the intrinsic Q at 1 K, where the resonators were measured. The Q-values obtained for optimized processing are sufficiently high as to suggest that qubits fabricated by a similar technique would not be limited by losses associated with the film or substrate.
We measured the quality factor (Q) and hence the losses of thin film superconducting Nb coplanar waveguide resonators fabricated with processes and materials similar to those used for Josephson effect qubits, where such losses can cause significant decoherence. Intrinsic Q-values range from several thousand to almost 106 depending on the process details. Reactive ion etching appears to reduce the resonator Q-values and the lift-off process can also degrade the Q-value for some resists. The resistivity of the Si substrates affects the intrinsic Q at 1 K, where the resonators were measured. The Q-values obtained for optimized processing are sufficiently high as to suggest that qubits fabricated by a similar technique would not be limited by losses associated with the film or substrate.
Many superconducting qubits are highly sensitive to dielectric loss, making the fabrication of coherent quantum circuits challenging. To elucidate this issue, we characterize the interfaces and surfaces of superconducting coplanar waveguide resonators and study the associated microwave loss. We show that contamination induced by traditional qubit lift-off processing is particularly detrimental to quality factors without proper substrate cleaning, while roughness plays at most a small role. Aggressive surface treatment is shown to damage the crystalline substrate and degrade resonator quality. We also introduce methods to characterize and remove ultra-thin resist residue, providing a way to quantify and minimize remnant sources of loss on device surfaces.
Superconducting coplanar waveguide (CPW) microwave resonators are crucial elements in Photon detectors, Quantum-limited parametric amplifiers, Narrow-band filters, Read-out, interconnect in quantum processors and Hybrid devices, connecting solid-state spins with superconducting circuits [1-3]. In the quantum regime, the dominant loss mechanism for high-Q superconducting resonators can be attributed to parasitic two-level systems (TLSs) in the dielectrics. Interface TLSs are common by products of the fabrication process, often introduced by impurities associated with Si surfaces [3]. To reduce intrinsic losses, we employ isotropic deep reactive-ion etching (DRIE) of Si substrate to create suspended NbN superconducting resonators (SSR).In this study, thin films of niobium (Nb) and niobium nitride (NbN) are deposited on Si substrate by a DC magnetron sputtering system. The influence of the N2/Ar gas ratio, the deposition current, the substrate bias potential on the superconducting critical temperature of the films are investigated. Plasma etching of Nb and NbN in a SF6 and Cl2-BCl3 gas plasma is studied using an inductively coupled plasma (icp) reactor. Parametric studies on the effects of total gas flow rate and chamber pressure on the edge angles and etch rates are reported. Finally, the suspended NbN superconducting resonator is fabricated and will be tested. This could be applied to the fabrication of superconducting qubits in integrated circuits, offering a path towards longer qubit coherence times.Reference:[1] Landig et al. Coherent spin–photon coupling using a resonant exchange qubit. Nature 560, 179–184 (2018)[2] Tosi et al. Silicon quantum processor with robust long-distance qubit couplings. Nat Commun 8, 450 (2017)[3] Bruno et al. Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates, Appl. Phys. Lett. 106, 182601 (2015)[4] Kennedy et al. Tunable Nb Superconducting Resonator Based on a Constriction Nano-SQUID Fabricated with a Ne Focused Ion Beam, Phys. Rev. Applied 11, 014006 (2019).
We report on the fabrication and characterization of superconducting coplanar waveguide (CPW) resonators based on titanium nitride (TiN) thin films deposited on 200\,mm diameter high-resistivity Si(100) substrates. We systematically investigate how deposition conditions, dry-etch power and in-situ resist strip temperature affect morphology, superconducting properties and dielectric losses. By tuning reactive sputtering conditions, three distinct preferred out-of-plane crystal orientations - (111), (200), and a mix of both are achieved. Our results demonstrate that all films exhibit similar minimal two-level system (TLS) losses, with TiN111 exhibiting the lowest median TLS losses δ~TLS, and greater robustness against reoxidation. The applied structuring process, in contrast, has a far greater influence on the TLS loss than the crystal orientation of the TiN film and, consequently, the intrinsic material properties of the superconducting layer. The lowest TLS losses for all TiN depositions were achieved with a low power etch and low temperature resist strip. An additional buffered oxide etch (BOE) treatment could remove high-loss interfacial oxides at the metal-air (MA) and substrate-air (SA) interface and recover the etch-induced TLS losses. Consequently, TiN resonators exhibiting δ~TLS values as low as 9.67×10−7 were realized. The corresponding median low-power loss, δ~LP, amounts to 11.04×10−7, which translates to an internal quality factor approaching one million. These findings highlight the critical role of process induced oxide formation at the MA and SA interfaces in limiting the performance of TiN resonators and provide a scalable, low-loss process compatible with industry-grade 200\,mm CMOS qubit fabrication workflows.
High-quality superconducting coplanar waveguide (SCPW) resonators are crucial for developing superconducting quantum information devices and sensors. We designed quarter-wavelength SCPW resonators and fabricated the SCPW resonators using Nb thin film. The resonant characteristics were measured at T = 4.2 K, revealing the intrinsic quality factor and the coupling quality factor to be Qi = 4,784 and Qc = 17, 980, respectively. Our design and fabrication techniques would be very useful to develop a gate-tunable superconducting qubit based on the semiconductor nanostructures.
Abstract Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5 × 106 at high powers and 2 × 106 (with the best value of 4.4 × 106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7–10.5 um center trace on high-resistivity silicon substrates commonly used in Josephson-junction based quantum circuit. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges’ positions and extra process steps on the overall dielectric losses. The best quality factors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting.
We present a systematic analysis of the internal losses of superconducting coplanar waveguide microwave resonators based on niobium thin films on silicon substrates. In particular, we investigate losses introduced by Nb/Al interfaces in the center conductor, which is important for experiments where Al based Josephson junctions are integrated into Nb based circuits. We find that these interfaces can be a strong source for two-level state (TLS) losses, when the interfaces are not positioned at current nodes of the resonator. In addition to TLS losses, for resonators including Al, quasiparticle losses become relevant above 200 mK. Finally, we investigate how losses generated by eddy currents in conductive material on the backside of the substrate can be minimized by using thick enough substrates or metals with high conductivity on the substrate backside.