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arXiv:2306.16301 · Scientific Reports

High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices

E. V. Zikiy, A. I. Ivanov, Nikita S. Smirnov, Dmitry O. Moskalev, Victor I. Polozov, Aleksei R. Matanin, Elizaveta I. Malevannaya, Vladimir V. Echeistov, Т. Г. Константинова, Ilya A. Rodionov

Published Sep 20, 2023• 29 citations
arXivHTMLPDF

Abstract

Abstract Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5 × 106 at high powers and 2 × 106 (with the best value of 4.4 × 106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7–10.5 um center trace on high-resistivity silicon substrates commonly used in Josephson-junction based quantum circuit. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges’ positions and extra process steps on the overall dielectric losses. The best quality factors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting.

DOI
10.1038/s41598-023-42332-6

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Abstract Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. The impact of materials and fabrication steps on dielectric losses can be evaluated using coplanar waveguide (CPW) microwave resonators. Here, we report on superconducting CPW microwave resonators with internal quality factors systematically exceeding 5 × 106 at high powers and 2 × 106 (with the best value of 4.4 × 106) at low power. Such performance is demonstrated for 100-nm-thick aluminum resonators with 7–10.5 um center trace on high-resistivity silicon substrates commonly used in Josephson-junction based quantum circuit. We investigate internal quality factors of the resonators with both dry and wet aluminum etching, as well as deep and isotropic reactive ion etching of silicon substrate. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed. Finally, we demonstrate the effect of airbridges’ positions and extra process steps on the overall dielectric losses. The best quality factors are obtained for the wet etched aluminum resonators and isotropically removed substrate with the proposed ultrasonic metal edge microcutting.
Material losses in superconducting circuits fundamentally limit qubit coherence times and resonator quality factors. Most research efforts focus on mitigating losses at circuit interfaces, including metal--substrate, substrate--air, and metal--air interfaces. However, the correlation between TLS and non-TLS losses with the intrinsic properties of the superconducting metal and the dielectric edge smoothness is not well studied. In this work, we link the aluminum film grain size to non-TLS losses and the dielectric trimming profile and roughness to TLS loss; both loss mechanisms are subsequently mitigated. To reduce metal-related losses, we engineer the aluminum microstructure by heating during deposition, increasing grain size and reducing grain boundary density. Beyond mitigating metal losses, we introduce a two-step etching technique, Tropic etching, to suppress dielectric TLS loss by producing an ultra-smooth silicon surface with minimal defects and redeposition. These results lay out the fabrication pathway for aluminum resonators with lower loss, demonstrating two-orders-of-magnitude improvement in quality factor from 6×1046\times10^{4}6×104 to 2.3×1062.3\times10^{6}2.3×106. Since aluminum is the basis for most high-coherence Josephson junctions and dielectric edges are inherent to all common device geometries, the improvements in aluminum microstructure and edge profiling, presented here, can enhance the performance of superconducting quantum devices.
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to the resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal–air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric etch and find that it reduced losses from the substrate–air interface, thereby improving the quality factor.
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors (Qi) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate–metal and substrate–air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the Qi. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300 °C, or in situ post-deposition oxidation of the film’s top surface. We find no improvement due to excessive pumping meant to reach a background pressure below 6 × 10−8 mbar. We correlate the measured loss with microscopic properties of the substrate–metal interface through characterization with x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, transmission electron microscopy, energy-dispersive x-ray spectroscopy, and atomic force microscopy.
© 2020 Author(s). Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to the resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric etch and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.
Abstract The coplanar waveguide (CPW) microwave resonators have been widely applied for solid-state quantum computation and single-photon detection. Based on the physical analysis for the high fidelity readouts of the qubit(s), in this paper we design and then fabricate accordingly the desired aluminum (Al) film quarter-wavelength resonators on sapphire substrates. The ultra-low temperature measurement results show that the linearity of the internal quality factor under the proper driving power is satisfied well for the high fidelity readouts of the qubit(s); and the phase- and amplitude fractional frequency noises are significantly less for avoiding the potential information false alarms of the detected qubit during the readouts. With the demonstrated qubit-resonator experimental parameters, we argue that the designed and fabricated quarter-wavelength CPW resonators, with optimized parameters, can be used to implement the desired weakly perturbing readout measurements of the solid-state qubits on-chip.
Superconducting quantum computing systems, including coplanar waveguide (CPW) resonators and qubits, are highly susceptible to energy dissipation from two-level systems (TLS) within bulk and interfacial dielectrics. CPW resonators serve as an ideal platform for characterizing these material losses at the single-photon excitation level. Building on recent experimental evidence that interface engineering can mitigate TLS losses, this study employs simulations to evaluate resonator quality factors across various interface modifications. Our results demonstrate that reducing losses at the substrate–air (SA) interface can increase the internal quality factor Qi by up to three orders of magnitude. While etching the SA interface also enhances Qi, material loss remains the dominant dissipation mechanism. Furthermore, we find that other lossy interfaces have a significantly smaller impact on the quality factor compared to the SA interface. These simulation results align with established experimental findings, providing a robust framework for refining resonator design. This work offers precise guidelines for TLS mitigation, essential for enhancing coherence times and developing more reliable superconducting quantum processors.