We present the design, fabrication and experimental result of a two-dimensional (2D) hexagonal lattice trap capable of trapping a lattice of charged particles. The microtrap consists of 29-hexagonal lattice sites each capable of trapping an ion. Each trapped ion has up to six neighbors with an ion-ion separation of 270.5 μm. A SOI-based structure was optimized to improve the trap performance substantially increasing the breakdown voltage (>1 kV) previously reported. Ytterbium (174Yb002B;) ions were successfully confined in an ultra-high vacuum (UHV) system by applying a radio frequency (RF) voltage of 455 V at a drive frequency Ω/2π = 32.2 MHz. In addition, our design is suitable to control the trapping height in situ by applying a secondary rf potentials. Numerical simulations of the 2D lattice trap demonstrated a large operating range by trapping ions as well as micro-particles with charge to mass ratio in order of 10-4to 105Kg/C at a frequency range of a few kilohertz to megahertz.
We present the design, fabrication and experimental result of a two-dimensional (2D) hexagonal lattice trap capable of trapping a lattice of charged particles. The microtrap consists of 29-hexagonal lattice sites each capable of trapping an ion. Each trapped ion has up to six neighbors with an ion-ion separation of 270.5 μm. A SOI-based structure was optimized to improve the trap performance substantially increasing the breakdown voltage (>1 kV) previously reported. Ytterbium (174Yb002B;) ions were successfully confined in an ultra-high vacuum (UHV) system by applying a radio frequency (RF) voltage of 455 V at a drive frequency Ω/2π = 32.2 MHz. In addition, our design is suitable to control the trapping height in situ by applying a secondary rf potentials. Numerical simulations of the 2D lattice trap demonstrated a large operating range by trapping ions as well as micro-particles with charge to mass ratio in order of 10-4to 105Kg/C at a frequency range of a few kilohertz to megahertz.
Trapped ions in Paul traps (radio frequency ion traps) are a promising candidate for the realization of a quantum computer. To date, experimental demonstrations of quantum computing and information processing with trapped ions have been limited to small numbers of quantum bits (qubits). The most prominent challenge to realise ion-trap quantum computation is to scale the system and control a large number of trapped ions coherently. Surface-electrode ion trap designs which are amenable to various microfabrication techniques offer a path to achieve this. In this work, design, fabrication and key operations of two types of surface-electrode ion traps, i.e. a Y-junction trap and a two-dimensional (2D) hexagonal lattice trap developed towards scaling ion-trap architectures, are presented. The steps involved in the fabrication of the ion-trap devices included photolithography, wet etch (hydrofluoric acid etch) and dry etch (deep reactive ion and inductively coupled plasma etching), and metal evaporation. The devices were fabricated on SOI substrates with different buried oxide thicknesses (i.e. 5 µm and 10 µm) and different metals for the trap electrodes (i.e. gold and aluminium). An extremely high-breakdown voltage up to 1 kV was measured in vacuum for the SOI-built test devices with a 10 µm-thick buried oxide formed by oxide film-to-oxide film bonding process. This is attributed to the deep V-shaped undercut profile of the buried oxide layer which resulted in a large breakdown path length, and so mitigating surface breakdown effects. Owing to the V-shaped undercut profile, the surface breakdown voltage was improved by 15% for the devices fabricated on SOI substrates with a 10 µm-thick buried oxide. In the first experiment, the demonstration of ytterbium (174Yb+) ion trapping in the 2D hexagonal lattice trap is achieved with a relatively long lifetime of a laser-cooled ion up to 90 minutes and ≤ 5 minutes without cooling in ultra-high vacuum system. The 2D lattice trap design allows for reliable trapping of 2D ion lattices, rudimentary shuttling between lattice sites and deterministic introducing of defects into the ion lattice. Based on all these abilities, such a 2D lattice trap with the predicted reduction of lattice spacing down to 32 µm can be configured as a versatile architecture for 2D quantum simulations with trapped ions. In the second experiment, microparticle trapping in the 2D lattice trap, performed in air, is achieved with the longest trapping lifetime of 60 minutes. Both gold and aluminium-coated electrodes also lead to comparable trapping performances. Furthermore, the in situ levitation of microparticles is successfully demonstrated at the maximum levitation height of 30 µm. This ability provides additional control on the trapping height which increases the overall functionality of the 2D lattice trap.
Over the past 15 years ion traps have demonstrated all the building blocks required of a quantum computer. Despite this success, trapping ions remains a challenging task, with the requirement for extensive laser systems and vacuum systems to perform operations on only a handful of qubits. To scale these proof of principle experiments into something that can outperform a classical computer requires an advancement in the trap technologies that will allow multiple trapping zones, junctions and utilize scalable fabrication technologies. I will discuss the construction of an ion trapping experiment, focussing on my work towards the laser stabilization and ion trap design but also covering the experimental setup as a whole. The vacuum system that I designed allows the mounting and testing of a variety of ion trap chips, with versatile optical access and a fast turn around time. I will also present the design and fabrication of a microfabricated Y junction and a 2- dimensional ion trap lattice. I achieve a suppression of barrier height and small variation of secular frequency through the Y junction, aiding to the junctions applicability to adiabatic shuttling operations. I also report the design and fabrication of a 2-D ion trap lattice. Such structures have been proposed as a means to implement quantum simulators and to my knowledge is the first microfabricated lattice trap. Electrical testing of the trap structures was undertaken to investigate the breakdown voltage of microfabricated structures with both static and radio frequency voltages. The results from these tests negate the concern over reduced rf voltage breakdown and in fact demonstrates breakdown voltages significantly above that typically required for ion trapping. This may allow ion traps to be designed to operate with higher voltages and greater ion-electrode separations, reducing anomalous heating. Lastly I present my work towards the implementation of magnetic fields gradients and microwaves on chip. This may allow coupling of the ions internal state to its motion using microwaves, thus reducing the requirements for the use of laser systems.
The optimization of two-dimensional (2D) lattice ion trap geometries for trapped ion quantum simulation is investigated. The geometry is optimized for the highest ratio of ion–ion interaction rate to decoherence rate. To calculate the electric field of such array geometries a numerical simulation based on a 'Biot–Savart like law' method is used. In this article we will focus on square, hexagonal and centre rectangular lattices for optimization. A method for maximizing the homogeneity of trapping site properties over an array is presented for arrays of a range of sizes. We show how both the polygon radii and separations scale to optimize the ratio between the interaction and decoherence rate. The optimal polygon radius and separation for a 2D lattice is found to be a function of the ratio between radio-frequency (rf) voltage and drive frequency applied to the array. We then provide a case study for 171 Yb + ions to show how a 2D quantum simulator array could be designed.
Quantum simulations of spin systems could enable the solution of problems that otherwise require infeasible classical resources. Such a simulation may be implemented using a well-controlled system of effective spins, such as a two-dimensional lattice of locally interacting ions. We propose here a layered planar rf trap design that can be used to create arbitrary two-dimensional lattices of ions. The design also leads naturally to ease of microfabrication. As a first experimental demonstration, we confine S88r+ ions in a millimeter-scale lattice trap and verify numerical models of the trap by measuring the motional frequencies. We also confine 440 nm diameter charged microspheres and observe ion-ion repulsion between ions in neighboring lattice sites. Our design, when scaled to smaller ion-ion distances, is appropriate for quantum simulation schemes, e.g., that of Porras and Cirac [Phys. Rev. Lett. 92, 207901 (2004)]. We note, however, that in practical realizations of the trap, an increase in the secular frequency with decreasing ion spacing may make a coupling rate that is large relative to the decoherence rate in such a trap difficult to achieve.
Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.
Trapped ions within Paul traps have shown to be a promising architecture in the realisation of a quantum information processor together with the ability of providing quantum simulations. Linear Paul traps have demonstrated long coherence times with ions being well isolated from the environment, single and multi-qubit gates and the high fidelity detection of states. The scalability to large number of qubits, incorporating all the previous achievements requires an array of linear ion traps. Microfabrication techniques allow for fabrication and micron level accuracy of the trap electrode dimensions through photolithography techniques. The first part of this thesis presents the experiential setup and trapping of Yb+ ions needed to test large ion trap arrays. This include vacuum systems that can host advanced symmetric and asymmetric ion traps with up to 90 static voltage control electrodes. Demonstration of a single trapped Yb+ ion within a two-layer macroscopic ion trap is presented. with an ion-electrode distance of 310(10) µm. The anomalous heating rate and spectral noise density of the trap was measured, a main form of decoherence within ion traps. The second half of this thesis presents the design and fabrication of multi-layer asymmetric ion traps. This allows for isolated electrodes that cannot be accessed via surface pathways, allowing for higher density of electrodes as well as creating novel trap designs that allow for the potential of quantum simulations to be demonstrated. These include two-dimensional lattices and ring trap designs in which the isolated electrodes provide more control in the ion position. For the microfabrication of these traps I present a novel high-aspect ratio electroplated electrode design that provides shielding of the dielectric layer. This provides a means to mitigate stray electric field due to charge build up on the dielectric surfaces. Electrical testing of the trap structures was performed to test bulk breakdown and surface flashover of the ion trap architectures. Results showed sufficient isolation between electrodes for both radio frequency and static breakdown. Surface flashover voltage measurements over the dielectric layer showed an improvement of more than double over previous results using a new fabrication technique. This will allow for more powerful ion trap chips needed for the next generation of microfabricated ion trap arrays for scalable quantum technologies.