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arXiv:2605.16543

Demonstration of transport in an ion trap design for two-dimensional lattices

Michael Pfeifer, Marco Valentini, Matthias Dietl, Fabian Anmasser, Simon Schey, Jakob Wahl, Philip C. Holz, Clemens Rössler, Yves Colombe, Philipp Schindler

quant-phSubmitted May 15, 2026• Announced May 19, 2026• 0 citations
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Abstract

Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.

Comments
14 pages, 9 figures

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Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.
A major hurdle for building a large-scale quantum computer is increasing the number of qubits while maintaining connectivity between them. In trapped-ion devices, this connectivity can be achieved by moving subregisters consisting of a few ions across the processor. Here, we focus on an architecture, which we refer to as the quantum spring array (QSA), that is based on a rectangular two-dimensional lattice of linear strings of ions. Connectivity between adjacent ion strings can be controlled by adjusting their separation. This requires control of trapping potentials along two directions, one along the axis of the ion string and one radial to it. In this work, we investigate key elements of the QSA architecture along both directions: We show that the coupling rate between neighboring lattice sites increases with the number of ions per site and the motion of the coupled system can be resilient to electrical noise, both being key requisites for fast and high-fidelity quantum gate operations. The coherence of the coupling is assessed and an entangling gate between qubits stored in radially separated trapping regions is demonstrated. Moreover, we demonstrate control over radio-frequency signals to adjust the radial separation, and thus the coupling rate, between strings. We further present constructions for the implementation of parallelized, transversal gate operations, and map the QSA architecture to code primitives for fault-tolerant quantum error correction, providing a step towards a quantum processor architecture that is optimized for large-scale operation.
A major hurdle for building a large-scale quantum computer is increasing the number of qubits while maintaining connectivity between them. In trapped-ion devices, this connectivity can be achieved by moving subregisters consisting of a few ions across the processor. Here, we focus on an architecture, which we refer to as the Quantum Spring Array (QSA), that is based on a rectangular two-dimensional lattice of linear strings of ions. Connectivity between adjacent ion strings can be controlled by adjusting their separation. This requires control of trapping potentials along two directions, one along the axis of the ion string and one radial to it. In this work, we investigate key elements of the QSA architecture along both directions: We show that the coupling rate between neighboring lattice sites increases with the number of ions per site and the motion of the coupled system can be resilient to electrical noise, both being key requisites for fast and high-fidelity quantum gate operations. The coherence of the coupling is assessed and an entangling gate between qubits stored in radially separated trapping regions is demonstrated. Moreover, we demonstrate control over radio-frequency signals to adjust the radial separation, and thus the coupling rate, between strings. We further present constructions for the implementation of parallelized, transversal gate operations, and map the QSA architecture to code primitives for fault-tolerant quantum error correction, providing a step towards a quantum processor architecture that is optimized for large-scale operation.
Over the past 15 years ion traps have demonstrated all the building blocks required of a quantum computer. Despite this success, trapping ions remains a challenging task, with the requirement for extensive laser systems and vacuum systems to perform operations on only a handful of qubits. To scale these proof of principle experiments into something that can outperform a classical computer requires an advancement in the trap technologies that will allow multiple trapping zones, junctions and utilize scalable fabrication technologies. I will discuss the construction of an ion trapping experiment, focussing on my work towards the laser stabilization and ion trap design but also covering the experimental setup as a whole. The vacuum system that I designed allows the mounting and testing of a variety of ion trap chips, with versatile optical access and a fast turn around time. I will also present the design and fabrication of a microfabricated Y junction and a 2- dimensional ion trap lattice. I achieve a suppression of barrier height and small variation of secular frequency through the Y junction, aiding to the junctions applicability to adiabatic shuttling operations. I also report the design and fabrication of a 2-D ion trap lattice. Such structures have been proposed as a means to implement quantum simulators and to my knowledge is the first microfabricated lattice trap. Electrical testing of the trap structures was undertaken to investigate the breakdown voltage of microfabricated structures with both static and radio frequency voltages. The results from these tests negate the concern over reduced rf voltage breakdown and in fact demonstrates breakdown voltages significantly above that typically required for ion trapping. This may allow ion traps to be designed to operate with higher voltages and greater ion-electrode separations, reducing anomalous heating. Lastly I present my work towards the implementation of magnetic fields gradients and microwaves on chip. This may allow coupling of the ions internal state to its motion using microwaves, thus reducing the requirements for the use of laser systems.
Quantum simulations of spin systems could enable the solution of problems that otherwise require infeasible classical resources. Such a simulation may be implemented using a well-controlled system of effective spins, such as a two-dimensional lattice of locally interacting ions. We propose here a layered planar rf trap design that can be used to create arbitrary two-dimensional lattices of ions. The design also leads naturally to ease of microfabrication. As a first experimental demonstration, we confine S88r+ ions in a millimeter-scale lattice trap and verify numerical models of the trap by measuring the motional frequencies. We also confine 440 nm diameter charged microspheres and observe ion-ion repulsion between ions in neighboring lattice sites. Our design, when scaled to smaller ion-ion distances, is appropriate for quantum simulation schemes, e.g., that of Porras and Cirac [Phys. Rev. Lett. 92, 207901 (2004)]. We note, however, that in practical realizations of the trap, an increase in the secular frequency with decreasing ion spacing may make a coupling rate that is large relative to the decoherence rate in such a trap difficult to achieve.
Large ion crystals in diverse geometries are a key resource for quantum simulation experiments. In this work, we introduce a macroscopic rf trap that supports a wide variety of one-dimensional ion configurations as well as lateral two-dimensional crystals with more than 100 ions. Our design is based on precision-machined fused silica wafers that are stacked to form the trap structure. Ten independently biased electrodes provide flexible control over the axial potential, enabling long one-dimensional crystals, isospaced ion strings, split-well chains, and two-dimensional arrays with tunable aspect ratios. We present the design and fabrication process for this trap and demonstrate the ability to tune the radial secular frequencies, detect and compensate micromotion, rotate the principal axes, and characterize trapped ion heating rates. All trap design and documentation files are freely available alongside this work, to facilitate adoption and further development within the ion trap community.
We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.