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Applied Physics Letters

Strain-induced tuning of the emission wavelength of high quality GaAs/AlGaAs quantum dots in the spectral range of the 87Rb D2 lines

Santosh Kumar, Rinaldo Trotta, Eugenio Zallo, Johannes D. Plumhof, P. Atkinson, Armando Rastelli, Oliver G. Schmidt

Published Oct 17, 2011• 50 citations
Publisher

Abstract

Reversible biaxial strains are used for tuning the emission wavelengths of high quality GaAs/AlGaAs quantum dots (QDs) in the spectral range of the 87Rb D2 lines. The strain is transferred by integrating free standing (Al)GaAs nanomembranes, containing QDs, onto piezoelectric actuators. Narrow excitonic emission lines as sharp as 25 μeV are shown, and a tuning range larger than 5 nm is demonstrated. This range corresponds to an induced anisotropic biaxial strain of the order of 0.15%, as evaluated from the shift in the emission of the GaAs from the nanomembranes. The presented on-chip technology is potentially interesting for future quantum memories based on hybrid semiconductor-atomic interfaces.

DOI
10.1063/1.3653804

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Reversible biaxial strains are used for tuning the emission wavelengths of high quality GaAs/AlGaAs quantum dots (QDs) in the spectral range of the 87Rb D2 lines. The strain is transferred by integrating free standing (Al)GaAs nanomembranes, containing QDs, onto piezoelectric actuators. Narrow excitonic emission lines as sharp as 25 μeV are shown, and a tuning range larger than 5 nm is demonstrated. This range corresponds to an induced anisotropic biaxial strain of the order of 0.15%, as evaluated from the shift in the emission of the GaAs from the nanomembranes. The presented on-chip technology is potentially interesting for future quantum memories based on hybrid semiconductor-atomic interfaces.
A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency of quantum dots with the transition frequency of rubidium atoms while preserving the relevant emission properties. Here, we demonstrate the bidirectional frequency tuning of the emission from a narrow-linewidth (close-to-transform-limited) quantum dot. The frequency tuning is based on a piezoelectric strain-amplification device, which can apply significant stress to thick bulk samples. The induced strain shifts the emission frequency of the quantum dot over a total range of 1.15 THz, about three orders of magnitude larger than its linewidth. Throughout the whole tuning process, both the spectral properties of the quantum dot and its single-photon emission characteristics are preserved. Our results show that external stress can be used as a promising tool for reversible frequency tuning of high-quality quantum dots and pave the wave toward the realization of a quantum dot–rubidium atom interface for quantum networking.
Tunable sources of entangled and single photons are essential for implementing entanglement-based quantum information protocols, as quantum teleportation and entanglement swapping depend on photon indistinguishability. Tunable devices are fabricated from indium arsenide (InAs) quantum dots (QDs) embedded in gallium arsenide (GaAs) nanomembranes placed on monolithic piezoelectric substrates. Circular Bragg grating (CBG) resonators enhance emission brightness and exploit the Purcell effect; however, the inclusion of CBGs reduces strain-mediated tunability compared to planar nanomembranes. A simple and effective solution is introduced: filling the CBG trenches with a stiff dielectric (aluminum oxide) via atomic layer deposition (ALD) restores up to 95% of the tunability of planar structures. Finite element analysis (FEA) confirms that the tunability loss originates from bending in the device layers due to strain relief in the CBG geometry. Lowering the stiffness of intermediate layers between the QDs and the piezoelectric actuator, such as in bonding or reflector layers, further increases strain losses in uncoated CBGs. Coated devices maintain 98-99% strain-tuning efficiency across all simulated underlayer stiffnesses. The results demonstrate that advantageous optical cavity properties can be effectively combined with piezoelectric strain tuning, enabling scalable, bright, and tunable quantum light sources.
On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.
Abstract We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter interactions and associated optoelectronic properties, and generates new functionalities, including the formation of quantum dots (QDs). Here, we combine spatially resolved micro-photoluminescence (μμμ-PL) spectroscopy from cryogenic (4$\text{-}94K)toroomtemperaturewithmicro−Ramanspectroscopyatroomtemperaturetoinvestigatethestrain−dependentemissionenergiesofthousandsofindividualQDsinML−WS94 K) to room temperature with micro-Raman spectroscopy at room temperature to investigate the strain-dependent emission energies of thousands of individual QDs in ML-WS94K)toroomtemperaturewithmicro−Ramanspectroscopyatroomtemperaturetoinvestigatethestrain−dependentemissionenergiesofthousandsofindividualQDsinML−WS_2$ and ML-WSe2_22​, integrated across multiple heterostructures and a piezoelectric device. Compared with delocalized excitons, QDs in both materials exhibit enhanced strain sensitivities of their emission energies −-− approximately fourfold in WS2_22​ and twofold in WSe2_22​ −-− leading to pronounced broadening of the ensemble emission linewidth. Temperature-dependent μμμ-PL spectroscopy combined with dynamic strain tuning experiments further reveal that the enhanced strain sensitivity of individual QDs originates from strengthened interactions with low-energy phonons induced by quantum confinement. Our results demonstrate a versatile strain-engineering approach with potential for spectral matching across solid-state, atomic, and hybrid quantum photonic networks, and provide new insights into phonon-QD interactions in two-dimensional semiconductors.
We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of hybrid-quantum systems for future quantum networks.