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arXiv:1602.02122

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms

Huiying Huang, Rinaldo Trotta, Yong-Heng Huo, Thomas Lettner, Javier Martín‐Sánchez, Daniel Huber, Johannes S. Wildmann, Marcus Reindl, Jiaxiang Zhang, Eugenio Zallo, Oliver G. Schmidt, Armando Rastelli

Published Feb 5, 2016• 3 citations
arXivHTMLPDF

Abstract

We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of hybrid-quantum systems for future quantum networks.

DOI
10.48550/arxiv.1602.02122

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arXiv:2501.15663•Jan 26, 2025•0 citations
We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of hybrid-quantum systems for future quantum networks.
Abstract We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
In forthcoming quantum networks various quantum systems might be involved to accomplish individual tasks, including storage of quantum states, quantum logic operations, error correction, or entanglement distillation. An interface between a single photon emitter and a potential photon storage could provide one fundamental building block of such a hybrid quantum system. Semiconductor quantum dots (QD) and atomic vapors have already been brought together by single photon spectroscopy of cesium and rubidium [1,2], narrow filtering of QD resonance fluorescence in cesium [3], slowing down QD photons by dispersion between the 6.8 GHz hyperfine-split rubidium D2transitions [4] and in the middle of the four cesium D1 transitions [5] (at around 5.0 GHz in Fig. 1 b).In our experiment the neutrally charged excitonic transition of a strain-tunable InGaAs QD is pumped either resonantly or non-resonantly by a pulsed laser. The QD emission is set between two cesium D1 transitions at 894 nm, which are hyperfine-split only by 1.2 GHz, with a very strong dispersion compared to preceding studies [4,5]. This allows for delay times of a few nanoseconds even at low optical densities, resulting in a propagation velocity at the order of 1/20 of the vacuum speed of light. Such a single photon - atom interface might lay the foundations for a low-loss quantum memory in a future hybrid quantum network.
Quantum memories can substantially increase the efficiency of long-distance communications by synchronizing entanglement swapping operations in quantum repeater nodes. To build a quantum memory, electromagnetically induced transparency (EIT) in atomic vapors can be exploited to coherently store light pulses even at room temperatures. As a quantum source of light, semiconductor quantum dots (QD) offer bright on-demand single photons with high purity.4 Interfacing QDs with atomic vapors has been shown by “slow light” but a quantum memory for QDs is yet to be demonstrated. In this work, we develop an EIT quantum memory hosted in warm cesium vapor. Storage of faint coherent light pulses on the single photon level shows high storage efficiency. A measured bandwidth in the order of 200 MHz makes the memory compatible with the Fourier-limited emission of QDs embedded in micropillar cavities. We show the first attempts to interface the emission from a QD-micropillar with our quantum memory by finetuning the emission wavelength of the emitters to one of the hyperfine transitions in Cs, where the EIT memory takes place. This work sets the base for a hybrid quantum memory based on atomic ensembles for an on-demand semiconductor single-photon source.
Single photon sources, which are compatible with quantum memories, are important components of quantum networks. In this article, we show optical investigations on isolated GaAs/Al0.25Ga0.75As quantum dots grown via droplet epitaxy, which emit single photons on resonance with the Rb-87-D2 line (780 nm). Under continuous wave resonant excitation conditions, we observe bright, clean, and narrowband resonance fluorescence emission from such a droplet quantum dot. Furthermore, the second-order correlation measurement clearly demonstrates the single photon emission from this resonantly driven transition. Spectrally resolved resonance fluorescence of a similar quantum dot yields a linewidth as narrow as 660 MHz (2.7 μeV), which corresponds to a coherence time of 0.482 ns. The observed linewidth is the smallest reported so far for strain free GaAs quantum dots grown via the droplet method. We believe that this single photon source can be a prime candidate for applications in optical quantum networks.
We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability $[{g}^{2}(0)\ensuremath{\sim}0.10\text{--}0.15]$ at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.
Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of ηint=0.6(1)%η_\mathrm{int}=0.6(1)\%ηint​=0.6(1)%. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.