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ACS Photonics

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms

Huiying Huang, Rinaldo Trotta, Yong-Heng Huo, Thomas Lettner, Johannes S. Wildmann, Javier Martín‐Sánchez, Daniel Huber, Marcus Reindl, Jiaxiang Zhang, Eugenio Zallo, Oliver G. Schmidt, Armando Rastelli

Published Mar 15, 2017• 36 citations
Publisher

Abstract

Abstract We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.

DOI
10.1021/acsphotonics.6b00935

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Benjamin Maaß, Avijit Barua, Norman Vincenz Ewald +7 more

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arXiv:2501.15663•Jan 26, 2025•0 citations
Abstract We demonstrate the first wavelength-tunable electrically pumped source of nonclassical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75 mm long cell containing warm 87Rb vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step toward the realization of hybrid-quantum systems for future quantum networks.
We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of hybrid-quantum systems for future quantum networks.
In forthcoming quantum networks various quantum systems might be involved to accomplish individual tasks, including storage of quantum states, quantum logic operations, error correction, or entanglement distillation. An interface between a single photon emitter and a potential photon storage could provide one fundamental building block of such a hybrid quantum system. Semiconductor quantum dots (QD) and atomic vapors have already been brought together by single photon spectroscopy of cesium and rubidium [1,2], narrow filtering of QD resonance fluorescence in cesium [3], slowing down QD photons by dispersion between the 6.8 GHz hyperfine-split rubidium D2transitions [4] and in the middle of the four cesium D1 transitions [5] (at around 5.0 GHz in Fig. 1 b).In our experiment the neutrally charged excitonic transition of a strain-tunable InGaAs QD is pumped either resonantly or non-resonantly by a pulsed laser. The QD emission is set between two cesium D1 transitions at 894 nm, which are hyperfine-split only by 1.2 GHz, with a very strong dispersion compared to preceding studies [4,5]. This allows for delay times of a few nanoseconds even at low optical densities, resulting in a propagation velocity at the order of 1/20 of the vacuum speed of light. Such a single photon - atom interface might lay the foundations for a low-loss quantum memory in a future hybrid quantum network.
On demand single-photon and entangled-photon sources are key building-blocks for many proposed photonic quantum technologies. For practical device applications, epitaxially grown quantum dots (QDs) are of increasing importance due to their bright photon emission with sharp line width. Particularly, they are solid-state systems and can be easily embedded within a light-emitting diode (LED) to achieve electrically driven sources. Therefore, one would expect a full-fledged optoelectronic quantum network that is running on macroscopically separated, QD-based single- and entangled-photon devices. An all-electrically operated wavelength-tunable on demand single-photon source (SPS) is demonstrated first. The device consists of a LED in the form of self-assembled InGaAs QDs containing nanomembrane integrated onto a piezoelectric crystal. Triggered single photons are generated via injection of ultra-short electrical pulses into the diode, while their energy can be precisely tuned over a broad range of about 4.8 meV by varying the voltage applied to the piezoelectric crystal. High speed operation of this single-photon emitting diode up to 0.8 GHz is demonstrated. In the second part of this thesis, a fast strain-tunable entangled-light-emitting diode (ELED) is demonstrated. It has been shown that the fine structure splitting of the exciton can be effectively overcome by employing a specific anisotropic strain field. By injecting ultra-fast electrical pulses to the diode, electrically triggered entangled-photon emission with high degree of entanglement is successfully realized. A statistical investigation reveals that more than 30% of the QDs in the strain-tunable quantum LED emit polarization-entangled photon-pairs with entanglement-fidelities up to f+ = 0.83(5). Driven at the highest operation speed ever reported so far (400 MHz), the strain-tunable quantum LED emerges as unique devices for high-data rate entangled-photon applications. In the end of this thesis, on demand and wavelength-tunable LH single-photon emission from strain engineered GaAs QDs is demonstrated. Fourier-transform spectroscopy is performed, from which the coherence time of the LH single-photon emission is studied. It is envisioned that this new type of LH exciton-based SPS can be applied to realize an all-semiconductor based quantum interface in the foreseeable distributed quantum networks.
Abstract Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate storage of single photons from a semiconductor quantum dot (QD) device in a room-temperature atomic vapor memory and their on-demand retrieval. A deterministically fabricated InGaAs QD light source emits single photons at the wavelength of the cesium D1 line at 895 nm which exhibit an inhomogeneously broadened linewidth of 5.1(7) GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3) ns. A maximum internal efficiency of η int = 0.6 ( 1 ) % is achieved. Our results expand the application space of both room-temperature vapor memories and semiconductor QDs in future quantum network architectures.
Single photon sources, which are compatible with quantum memories, are important components of quantum networks. In this article, we show optical investigations on isolated GaAs/Al0.25Ga0.75As quantum dots grown via droplet epitaxy, which emit single photons on resonance with the Rb-87-D2 line (780 nm). Under continuous wave resonant excitation conditions, we observe bright, clean, and narrowband resonance fluorescence emission from such a droplet quantum dot. Furthermore, the second-order correlation measurement clearly demonstrates the single photon emission from this resonantly driven transition. Spectrally resolved resonance fluorescence of a similar quantum dot yields a linewidth as narrow as 660 MHz (2.7 μeV), which corresponds to a coherence time of 0.482 ns. The observed linewidth is the smallest reported so far for strain free GaAs quantum dots grown via the droplet method. We believe that this single photon source can be a prime candidate for applications in optical quantum networks.
Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of ηint=0.6(1)%η_\mathrm{int}=0.6(1)\%ηint​=0.6(1)%. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.