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arXiv:1710.02490 · Physical review. B./Physical review. B

On-demand semiconductor source of 780-nm single photons with controlled temporal wave packets

Lucas Béguin, Jan-Philipp Jahn, Janik Wolters, Marcus Reindl, Yong-Heng Huo, Rinaldo Trotta, Armando Rastelli, Fei Ding, Oliver G. Schmidt, Philipp Treutlein, Richard John Warburton

Published May 21, 2018• 25 citations
arXivHTMLPDF

Abstract

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability $[{g}^{2}(0)\ensuremath{\sim}0.10\text{--}0.15]$ at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

DOI
10.1103/physrevb.97.205304

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•Jan 1, 2026•0 citations
We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at 780 nm are generated on demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multiphoton emission probability [g2(0)\ensuremath∼0.10–0.15][{g}^{2}(0)\ensuremath{\sim}0.10\text{--}0.15][g2(0)\ensuremath∼0.10–0.15] at a generation rate up to 10 MHz. We observe Raman photons with linewidths as low as 200 MHz, which is narrow compared to the 1.1-GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.
We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency matched to the Rb D2D2D2 transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.42 GHz) with both resonant and nonresonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible dephasing of the QD excitonic transition. We therefore demonstrate significant progress towards the realization of an ideal solid-state source of single photons at a key wavelength for quantum technologies.
Single photon sources, which are compatible with quantum memories, are important components of quantum networks. In this article, we show optical investigations on isolated GaAs/Al0.25Ga0.75As quantum dots grown via droplet epitaxy, which emit single photons on resonance with the Rb-87-D2 line (780 nm). Under continuous wave resonant excitation conditions, we observe bright, clean, and narrowband resonance fluorescence emission from such a droplet quantum dot. Furthermore, the second-order correlation measurement clearly demonstrates the single photon emission from this resonantly driven transition. Spectrally resolved resonance fluorescence of a similar quantum dot yields a linewidth as narrow as 660 MHz (2.7 μeV), which corresponds to a coherence time of 0.482 ns. The observed linewidth is the smallest reported so far for strain free GaAs quantum dots grown via the droplet method. We believe that this single photon source can be a prime candidate for applications in optical quantum networks.
This Letter reports all-optically tunable and highly indistinguishable single Raman photons from a driven single quantum dot spin. The frequency, linewidth, and lifetime of the Raman photons are tunable by varying the driving field power and detuning. Under continuous-wave excitation, subnatural linewidth single photons from off-resonant Raman scattering show an indistinguishability of 0.98(3). Under π pulse excitation, spin- and time-tagged Raman fluorescence photons show an almost vanishing multiphoton emission probability of 0.01(2) and a two-photon quantum interference visibility of 0.95(3). Lastly, Hong-Ou-Mandel interference is demonstrated between two single photons emitted from remote, independent quantum dots with an unprecedented visibility of 0.87(4).
A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency of quantum dots with the transition frequency of rubidium atoms while preserving the relevant emission properties. Here, we demonstrate the bidirectional frequency tuning of the emission from a narrow-linewidth (close-to-transform-limited) quantum dot. The frequency tuning is based on a piezoelectric strain-amplification device, which can apply significant stress to thick bulk samples. The induced strain shifts the emission frequency of the quantum dot over a total range of 1.15 THz, about three orders of magnitude larger than its linewidth. Throughout the whole tuning process, both the spectral properties of the quantum dot and its single-photon emission characteristics are preserved. Our results show that external stress can be used as a promising tool for reversible frequency tuning of high-quality quantum dots and pave the wave toward the realization of a quantum dot–rubidium atom interface for quantum networking.
The generation of ultra-narrowband, pure and storable single photons with widely tunable wave shape is an enabling step toward hybrid quantum networks requiring interconnection of remote disparate quantum systems. It allows interaction of quantum light with several material systems, including photonic quantum memories, single trapped ions and opto-mechanical systems. Previous approaches have offered a limited tuning range of the photon duration of at most one order of magnitude. Here we report on a heralded single photon source with controllable emission time based on a cold atomic ensemble, which can generate photons with temporal durations varying over three orders of magnitude up to 10 μs without a significant change of the readout efficiency. We prove the nonclassicality of the emitted photons, show that they are emitted in a pure state, and demonstrate that ultra-long photons with nonstandard wave shape can be generated, which are ideally suited for several quantum information tasks.
Quantum memories are a key technology for distributing entanglement in large-scale quantum networks. They allow for coherent control and temporal reordering of single photons which is a fundamental prerequisite for quantum repeaters, local synchronization and buffering of quantum information. These applications require bright and pure sources of indistinguishable single photons, as well as long-lived, efficient, and high-bandwidth quantum memories with minimal noise. The demonstration of robust, scalable, multi-mode photonic interfaces between different types of quantum memories and single-photon sources remains an open experimental challenge. This work contributes to this endeavor by investigating a heterogeneous interface between a semiconductor quantum dot single-photon source and a room-temperature atomic vapor memory. The first part of this work presents the first room-temperature, ladder-type atomic vapor memory that operates on the Cs D1 line at 895\,nm. The performance of the memory is characterized using attenuated laser pulses at the single-photon level. The memory achieves an internal efficiency of ηint=15(1) %\eta_\mathrm{int}=15(1)\,\%ηint​=15(1)% at a storage time of τs=17.4(2)\tau_\mathrm{s}=17.4(2)τs​=17.4(2)\,ns. We derive a quantitative benchmark for the memory compatibility with quantum dot single-photon sources. The memory's high signal-to-noise ratio of 830(80), and its spectral acceptance window of W=560\mathcal{W}=560W=560\,MHz promise compatibility with single photons from state-of-the-art InGaAs quantum dot devices. Furthermore, we present such a nano-integrated quantum dot device and characterize its optical properties. We measure a radiative lifetime of 1.3(1)\,ns and an inhomogeneously broadened linewidth of 5.1(1)\,GHz. The temperature tuning of the emission wavelength to the Cs D1 line allows coupling of the quantum dot to the memory in a joint experiment. The storage of single photons from a quantum dot source in a room-temperature atomic memory is demonstrated with on-demand retrieval. The variable storage time of up to τs=19.8\tau_\mathrm{s}=19.8τs​=19.8\,ns and the memory's fractional delay of Df=14(1)\mathrm{D}_\mathrm{f}=14(1)Df​=14(1) present a significant advancement in the research field. We compare our results with other types of interfaces between single-photon sources and quantum memories and discuss the performance in the context of quantum network applications. This work marks an important step towards local buffering and synchronization of quantum information in heterogeneous quantum network nodes.