Soviet Journal of Quantum Electronics
Self-induced change in the polarization of high-power resonant radiation in an LiF:F2-crystal
Nikolai N Il'ichev, А. V. Kiryanov, A A Malyutin
Abstract
A two-level model of absorbing centers is used to make a theoretical analysis of the propagation of cw high-power resonant radiation in an LiF: crystal. It is shown that saturation of the absorption is accompanied by a self-induced change in the polarization of the radiation that depends on the wave intensity and on the orientation of its electric vector relative to the crystallographic axes of the crystal.