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Superlattices and Microstructures

Transient electron population and optical properties in a semiconductor quantum well

Zhiping Wang, Benli Yu, Xuqiang Wu, Shenglai Zhen, Zhigang Cao, Jun Zhu

Published Oct 21, 2011• 14 citations
Publisher
DOI
10.1016/j.spmi.2011.10.001

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We analyze the steady state and transient properties of the polarization and of the electronic population in a triple semiconductor quantum well structure with tunneling induced interference. We first derive the dark states of the system and show that this structure can lead to double dark states. Then, we show that under the dark state conditions the system can exhibit tunneling induced transparency, slow light, transient gain without inversion and coherent population trapping. The dynamics of the polarization and of the electronic population, as well as the total trapped electronic population in the system, are found to be depended on which dark state condition is satisfied.
Within the framework of light-semiconductor interaction and the Lutting-Kohn model for the semiconductor band structure, we theoretically studied the mechanism of the polarization switch with coherent transient features. The result shows, in the coherent limitation, when the pump pulse Ep and signal pulse Es are orthogonal polarized, the third order polarization P(3), with first order of Es and second order of |Ep|, approach to zero, due to the destructive quantum interference, which results in an ultrafast pump-signal relative polarization dependent P(3), therewith a polarization switch. The study also shows that, when the light interacts with semiconductors coherently, the polarization state of the light is transferred to the relative phase of the electron spin, rather than the electron spin itself. The population of the polarization eigenstate excited by the pump pulse, do not origin from the Coulomb force of electrons, and should not thought phenomenologically as the exciton characterized by light polarization. This population will dephase to real carriers population, i.e. electron with exact spin |↑> or |↓>, by losing phase coefficients of the polarization eigenstates, in an ultrashort quantum dephase time.