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Physica E Low-dimensional Systems and Nanostructures

Electron population and optical properties via incoherent pumping fields in semiconductor quantum wells

Zhiping Wang

Published Jun 6, 2011• 3 citations
Publisher
DOI
10.1016/j.physe.2011.05.015

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Physical Review B•Apr 19, 2010•29 citations
The transient and steady-state dispersion and absorption properties of a three-subband asymmetric semiconductor quantum well system are investigated. In the steady-state regime, it is shown that by increasing the strength of Fano-interference as well as enhancement of energy splitting of two excited states the slope of dispersion changes from negative to positive which is corresponding to a switch between superluminal to subluminal light propagation. At the same time, the probe absorption reduces at telecommunication wavelength λ = 1550 nm. The influence of incoherent pumping fields on time-dependent susceptibility is then discussed. It is found that due to more transfer of population to the upper levels, increasing the rate of incoherent pump field leads to the reduction of probe absorption. In addition, it is realized that incoherent pumping has a major role in converting fast to slow propagation of light at long wavelength. We also introduce an extra controllability for the light pulse to be slow downed at Telecom wavelength just through the quantum interference arising from incoherent pumping fields. The obtained results may be practical in telecommunication applications.
Abstract: A theoretical investigation is carried out into the impact of incoherent pumping fields and quantum interference induced by incoherent pumping fields on the Kerr nonlinearity in a three-level asymmetric semiconductor quantum well system. It is found that Kerr nonlinearity is so sensitive to the rate of incoherent pumping fields, but insensitive to the quantum interference induced by incoherent pumping fields. In addition, it is demonstrated that an enhanced Kerr nonlinearity with reduced absorption can be achieved just via the strength of Fano- type interference and without applying any coherent laser field. The obtained results are very different from the conventional schemes which coherent coupling fields are used to control the Kerr nonlinearity. This advantages make our electronic medium much more practical than its atomic counterpart due to its flexible design and the controllable interference strength.
We present results of detailed investigations of light emission from semiconductor multiple quantum wells at low temperatures and high magnetic fields excited by intense femtosecond laser pulses. The intensity and linewidth as well as the directional and statistical properties of photoemission strongly depended on the magnetic field strength and pump laser fluence. We also investigated the effects of spot size, temperature, excitation geometry, and excitation pulse width on the emission properties. The results suggest that the initially incoherent photoexcited electron-hole pairs spontaneously form a macroscopic coherent state upon relaxation into the low-lying magnetoexcitonic states, followed by the emission of a superfluorescent burst of radiation. We have developed a theoretical model for superfluorescent emission from semiconductor quantum wells, which successfully explained the observed characteristics.