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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Coherent phenomena in a semiconductor quantum well system: effects of double dark states

Evangelos Voutsinas, Antonios Fountoulakis, Andreas Terzis, John Boviatsis, Sotirios Baskoutas, Emmanuel Paspalakis

Published Aug 31, 2006• 5 citations
Publisher

Abstract

We analyze the steady state and transient properties of the polarization and of the electronic population in a triple semiconductor quantum well structure with tunneling induced interference. We first derive the dark states of the system and show that this structure can lead to double dark states. Then, we show that under the dark state conditions the system can exhibit tunneling induced transparency, slow light, transient gain without inversion and coherent population trapping. The dynamics of the polarization and of the electronic population, as well as the total trapped electronic population in the system, are found to be depended on which dark state condition is satisfied.

DOI
10.1117/12.678994

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We analyze the steady state and transient properties of the polarization and of the electronic population in a triple semiconductor quantum well structure with tunneling induced interference. We first derive the dark states of the system and show that this structure can lead to double dark states. Then, we show that under the dark state conditions the system can exhibit tunneling induced transparency, slow light, transient gain without inversion and coherent population trapping. The dynamics of the polarization and of the electronic population, as well as the total trapped electronic population in the system, are found to be depended on which dark state condition is satisfied.
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Summary form only given. The phenomenon of "dark resonances" or coherent population trapping is a well known concept in optics and laser spectroscopy. It can be considered as the basis for such effects as electromagnetically induced transparency and lasing without inversion. We report the observation of the novel spectral features which arise in systems where multiple quantum superposition states are coupled and interact coherently. These novel resonances correspond to the recently predicted "double-dark states". In the experiment, an optically thin ensemble of rubidium-37 atoms in zero magnetic field is excited in a /spl Lambda/ configuration with circularly polarized light from a pair of 789 nm diode lasers.
This paper explores quantum-coherence phenomena in a semiconductor quantum-dot structure. The calculations predict the occurrence of inversionless gain, electromagnetically induced transparency, and refractive-index enhancement in the transient regime for dephasing rates typical under room temperature and high excitation conditions. They also indicate deviations from atomic systems because of strong many-body effects. Specifically, Coulomb interaction involving states of the quantum dots and the continuum belonging to the surrounding quantum well leads to collision-induced population redistribution and many-body energy and field renormalizations that modify the magnitude, spectral shape, and time dependence of quantum-coherence effects.
We investigate the transient behaviour of a weak probe in asymmetric double quantum well structures, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. There is no external coherent coupling field applied, and we find that probe gain can be achieved during the transient process, which is induced by the coherent coupling of the upper states via the resonant tunnelling. We show that the transient behaviour of the probe depends on the coupling strength and the dephasing rate and can be tuned by changing the width of the tunnelling barrier.
We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantum-well structure based on the tunneling induced transparency. In this semiconductor structure, the pump field is replaced by the electron-tunneling coupling, which can be modulated by a static electric field. With appropriate conditions, we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.
A simple scheme is proposed to achieve three-mode continuous-variable (CV) entanglement in a coupled triple-semiconductor quantum-well (TSQW) structure via tunneling-induced interference. In the present scheme, the TSQW structure is trapped into a triply resonant cavity, and the tunneling-induced interference effects considered here are the key to realizing entanglement. By numerically simulating the dynamics of the system, we show that the strength of tunneling-induced interference can effectively influence the period of entanglement, and the generation of entanglement does not depend intensively on the initial condition of the cavity field in our scheme. As a result, the present research provides an efficient approach to achieve three-mode CV entanglement in a semiconductor nanostructure, which may have an impact on the progress of solid-state quantum-information theory.