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Chinese Physics B

Tunneling-induced ultraslow bright and dark solitons in quantum wells

Shuangli Fan, Yi-Ping Shi, Zhang Hong-jun, Hui Sun

Published Nov 1, 2012• 3 citations
Publisher

Abstract

We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantum-well structure based on the tunneling induced transparency. In this semiconductor structure, the pump field is replaced by the electron-tunneling coupling, which can be modulated by a static electric field. With appropriate conditions, we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.

DOI
10.1088/1674-1056/21/11/114203

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We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantum-well structure based on the tunneling induced transparency. In this semiconductor structure, the pump field is replaced by the electron-tunneling coupling, which can be modulated by a static electric field. With appropriate conditions, we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.
This paper investigates the nonlinear evolution of the pulse probe field in an asymmetric coupled-quantum well driven coherently by a pulse probe field and two controlled fields. This study shows that, by choosing appropriate physical parameters, self-modulation can precisely balance group velocity dispersion in the investigated system, leading to the formation of ultraslow optical solitons of the probe field. The proposed scheme may lead to the development of the controlled technique of optical buffers and optical delay lines.
We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with a ultraslow group velocity V g /c ∼ – 10 −3 . Such a semiconductor system is much more practical than its atomic counterpart because of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQW solid-state material may be used for the control technology of optical delay lines and optical buffers.
We study the low-intensity light pulse propagation through an asymmetric double quantum well via Fano-type interference based on intersubband transitions. The propagation of the pulse across the quantum well is studied analytically and numerically with the coupled Maxwell-Schr\"odinger equations. We show the generation of ultraslow bright and dark optical solitons in this system. Whether the solitons are dark and bright can be controlled by the ratio of dipole moments of the intersubband transitions. Such investigation of ultraslow optical solitons in the present work may lead to important applications such as high-fidelity optical delay lines and optical buffers in semiconductor quantum wells structure.
We investigate the formation and propagation of optical solitons in an asymmetric double quantum-well structure. Using a standard method of multiple scales we derive a nonlinear Schr\"odinger (NLS) equation with some high-order correction terms that describe effects of linear and differential absorption, nonlinear dispersion, delay response of nonlinear refractive index, and third-order dispersion of a probe field. We show that in order to make slowly varying envelope approximation be valid an excitation scheme of interband transition should be adopted. We also show that for realistic quantum-well parameters the probe field with time length of picosecond or shorter must be used to make dispersion and nonlinear lengths of the system be smaller than absorption length, only by which a shape-preserving propagation of optical solitons is available. In addition, we clarify validity domains for the perturbed NLS equation as well as the high-order NLS equation and provide various optical soliton solutions in different regimes both analytically and numerically. We demonstrate that the solitons obtained have ultraslow propagating velocity and can be generated under very low input light intensity.
The possibility of generation and propagation of ultraslow bright optical solitons in asymmetric three-coupled quantum well systems is studied in this paper. These bright solitons owe their existence to Kerr and quintic nonlinearities which arise due to a probe pulse and two controlling laser beams. We also demonstrate numerically that these solitons are stable. The modulation instability of a continuous or quasi-continuous wave probe beam has been also investigated and the role of quintic nonlinearity in suppressing this instability addressed.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.