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Physica E Low-dimensional Systems and Nanostructures

Transient two-photon absorption property in a n-doped semiconductor quantum well

Zhiping Wang

Published Feb 12, 2011• 21 citations
Publisher
DOI
10.1016/j.physe.2011.01.023

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We investigate the transient gain-absorption properties of the probe field in an n -doped three-level semiconductor quantum well system. It is shown that the coupling field and the pumping field affect the optical behavior dramatically, which can be used to manipulate the gain-absorption coefficient. The dependence of the gain-absorption properties on the relative phase is also discussed. Our study is much more practical than its atomic counterpart due to its flexible design and the wide adjustable parameters. Thus, it may provide some new possibilities for technological applications.
We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.