Superconductor Science and Technology
Design of single-flux-quantum universal gates with a wide operating margin
Hiroaki Myoren, Yoshihiro Wakimizu, S. Takada
Abstract
We have successfully designed single-flux-quantum (SFQ) universal gates with a wide operating margin. We have previously presented universal gates such as NAND and NOR gates. These universal gates have a small operating margin and should be optimized to realize a wide operating margin. In this study, we newly designed universal gates and optimized the device parameters using an SFQ circuit-optimizing tool. Assuming a 1 kA cm −2 Nb/Al–AlO x /Nb junction technology, the newly designed NAND and NOR gates had a critical margin of more than ±20% for 20 GHz operation. Direct-current bias margins for NAND and NOR gates were also exceeded by ±30% for 20 GHz operation.