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Soviet Journal of Quantum Electronics

Values of the gain in the 1.5 and 3 μm ranges of a chromium- and erbium-activated yttrium scandium gallium garnet crystal

Z. S. Saidov, Valerii A Smirnov, Ivan A Shcherbakov

Published Mar 31, 1988• 2 citations
Publisher

Abstract

The absolute values of the radiation intensities were measured and an analysis was made of the spectral dependences of the gains due to the 4 I 11/2 → 4 I 13/2 (3 μm) and 4 I 13/2 → 4 I 15/2 (1.5 μm) transitions in Er 3+ ions in an yttrium scandium gallium garnet crystal.
DOI
10.1070/qe1988v018n03abeh011505

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The intensities of optical absorption spectra of Er 3+ in single crystals of yttrium gallium garnet at 700 °K have been shown to fit Judd's theory of 4f-4f transitions with the following parameters: T 2 = 1·44 × 10 -21 s, T 4 = 1·12 × 10 -21 s, T 6 = 1·42 × 10 -21 s. These have been used to estimate Einstein coefficients useful in a discussion of the quantum efficiency of the fluorescence from the 4 S 3/2 state, and the efficiency of infra-red quantum counter action in the material. For pure spontaneous radiation an efficiency of 71% for transitions to the 4 I 15/2 ground state is expected. The quantum efficiency has also been directly measured and a value of 12% was obtained. This is lower owing to competing phonon processes. Using the experimental value for the quantum efficiency, and the above values of T , a theoretical photon gain for quantum counter action of 0·55 × 10 -8 has been calculated.
Stimulated emission due to the 4 I 11/2 – 4 I 13/2 transition (λ = 2.936 μ) in yttrium aluminum garnet (Y 3 Al 5 O 12 ) doped with Er 3+ ions (30 wt%) was observed for the first time at 300°K. The output energy from crystals of 50 × 3 mm dimensions was 0.3 J under free-oscillation conditions and 0.05 J in the case of Q switching. The lifetime of the 4 I 11/2 level was determined for crystals with 3–30 wt% Er 3+ . The energy from the higher Er 3+ levels relaxed in a cascade manner through 4 I 11/2 to 4 I 13/2 .
Temperature dependence of an enhanced excited state absorption was investigated in erbium-doped garnet crystals using 787.3 and 787.8 nm laser diodes. The enhanced absorption was obtained at temperature ranges of 15–570 K, 15–420 K, and 15–1200 K in a yttrium aluminum garnet, a yttrium scandium gallium garnet, and a lutetium aluminum garnet, respectively. Absorption peaks corresponding to both the I1615/2−I49/2 and the I1613/2−I211/2 transitions of Er3+ in garnets were shifted from those for 300 K at high temperature. The enhanced absorption weakened at high temperature because an absorption cross section from the I413/2 level to the H211/2 level decreased due to the shift of the absorption peaks. It has been confirmed that a mechanism of the enhanced absorption can be explained by calculating the rate equations based on an analytical model for a five-level system of the Er3+ ion. It is suggested that the enhanced absorption weakened at temperatures lower than 12 K because the number of phonons decreased due to low temperature.