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Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals

Spectral Hole Burning in Neutron Irradiated Ruby Crystals

Ilmo Sildos, Udo Bogner, Ivan Dolindo, Jaak Kikas

Published Jun 1, 1992• 0 citations
Publisher

Abstract

Spectral hole burning was performed in neutron‐irradiate a. Additional lines were found in the spectra of photo‐product, which were caused by Cr ions. Hole burning mechanisms are discussed in such defective crystals.
DOI
10.1080/10587259208046887

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In different color centers of neutron- irradiated and annealed sapphire crystals persistent spectral holes could be burned which were thermoresistant up to 670K [1]. In the 755.6nm zero-phonon line (ZPL) two-color photon-gated persistent spectral hole-burning (PSHB) was obtained with pulsed dye-lasers [2]. Preliminary results of PSHB with a cw laser were reported for the 462.5nm ZPL [3]. The present study concerns a investigation of PSHB with cw-lasers in different ZPL, including the 755.6nm ZPL, which is interesting for potential applications in particular because diode lasers are available in this spectral range.

Spectral Hole-Burning and Related Spectroscopies: Science and Applications•Jan 1, 1992•0 citations
A persistent spectral hole-burning technique has been employed to investigate the impact of uniaxial stress on the defects created by neutron irradiation in natural Ia-type diamond. Shifts of the spectral holes in the 649, 681, and 774 nm zero-phonon lines (ZPLs) have been measured. The values of the shifts, 2.2, 1.2, and 0.65 cm−1/kbar, obtained from these measurements have been compared with the stress shifts of the lines of defects with well-known structure. It is suggested that vacancies are present in the defect responsible for the 681 nm ZPL. A combination of the results of polarized luminescence and uniaxial stress experiments leads to the conclusion of rhombic I symmetry of the defects that give rise to the 649 and 681 nm ZPLs.
In different color centers of neutron- irradiated and annealed sapphire crystals persistent spectral holes could be burned which were thermoresistant up to 670K [1]. In the 755.6nm zero-phonon line (ZPL) two-color photon-gated persistent spectral hole-burning (PSHB) was obtained with pulsed dye-lasers [2]. Preliminary results of PSHB with a cw laser were reported for the 462.5nm ZPL [3]. The present study concerns a investigation of PSHB with cw-lasers in different ZPL, including the 755.6nm ZPL, which is interesting for potential applications in particular because diode lasers are available in this spectral range.