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Proceedings of the Estonian Academy of Sciences Physics Mathematics

PERSISTENT HIGH-TEMPERATURE SPECTRAL HOLE BURNING IN A NEUTRON-COLOURED DIAMOND

Andres Osvet, Artur Suisalu, Ilmo Sildos

Published Feb 16, 1992• 8 citations
Publisher

Abstract

A spectroscopic investigation of a neutron-irradiated laß-type natural diamond crystal was carried out.Spectral hole burning in the absorption lines of defect aggregates at 649.5, 655 and 681 nm was performe(f By virtue of the high Debye temperature of the diamond the holes burnt-in at LHeT were observable in the spectra up to ~200 K.1.
DOI
10.3176/phys.math.1992.3.07

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In this paper an overview on the spectroscopic and spectral hole-burning properties of radiation-induced spectral lines in nitrogen-containing diamonds is given. Special attention has been paid to the defects with the 774 and 813 nm zero-phonon lines that are suitable for room temperature spectral hole burning. The temperature dependence of the widths of the homogeneous lines is carefully examined. Persistent spectral hole burning in these lines is demonstrated at T = 100, 200 and 300 K. The creation of these colour centres dependent on irradiation and annealing parameters in different types of diamonds is investigated. Assumptions about the nitrogen content of the centres are made on the basis of these investigations. The possibility of producing the 774 and 813 nm centres in synthetic diamonds is shown and the optimal parameters are given.
A persistent spectral hole-burning technique has been employed to investigate the impact of uniaxial stress on the defects created by neutron irradiation in natural Ia-type diamond. Shifts of the spectral holes in the 649, 681, and 774 nm zero-phonon lines (ZPLs) have been measured. The values of the shifts, 2.2, 1.2, and 0.65 cm−1/kbar, obtained from these measurements have been compared with the stress shifts of the lines of defects with well-known structure. It is suggested that vacancies are present in the defect responsible for the 681 nm ZPL. A combination of the results of polarized luminescence and uniaxial stress experiments leads to the conclusion of rhombic I symmetry of the defects that give rise to the 649 and 681 nm ZPLs.
In this presentation we report on several spectral features associated with Si impurity in diamond related to spectral hole-burning. Diamond, with its hardness and high temperature stability, is a potentially useful material for high temperature hole-burning storage. The first hole-burning in bulk diamonds [1] was observed from color centers in the spectra of N3 at 415 nm, H4 at 496 nm, N-V at 637 nm, and GR1 at 741 nm. Recently, hole-burning was observed for color centers N-V at 637 nm and 574 nm of electron irradiated chemical-vapor deposited (CVD) diamonds [2].