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Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals

Spectroscopic Study of Formation of Irradiation Defects in Diamond, Suitable for Persistent Spectral Hole Burning

Andres Osvet, Ilmo Sildos

Published Dec 1, 1996• 2 citations
Publisher

Abstract

Neutron irradiation and subsequent thermal annealing have been used to produce diamond-based materials with suitable for high-temperature spectral hole burning properties. From the analysis of the optical spectra of samples subjected to different treatment the optimal conditions for the production of such materials have been deduced.
DOI
10.1080/10587259608042753

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Journal of Applied Physics•Jun 1, 1996•10 citations
In this paper an overview on the spectroscopic and spectral hole-burning properties of radiation-induced spectral lines in nitrogen-containing diamonds is given. Special attention has been paid to the defects with the 774 and 813 nm zero-phonon lines that are suitable for room temperature spectral hole burning. The temperature dependence of the widths of the homogeneous lines is carefully examined. Persistent spectral hole burning in these lines is demonstrated at T = 100, 200 and 300 K. The creation of these colour centres dependent on irradiation and annealing parameters in different types of diamonds is investigated. Assumptions about the nitrogen content of the centres are made on the basis of these investigations. The possibility of producing the 774 and 813 nm centres in synthetic diamonds is shown and the optimal parameters are given.
In this presentation we report on several spectral features associated with Si impurity in diamond related to spectral hole-burning. Diamond, with its hardness and high temperature stability, is a potentially useful material for high temperature hole-burning storage. The first hole-burning in bulk diamonds [1] was observed from color centers in the spectra of N3 at 415 nm, H4 at 496 nm, N-V at 637 nm, and GR1 at 741 nm. Recently, hole-burning was observed for color centers N-V at 637 nm and 574 nm of electron irradiated chemical-vapor deposited (CVD) diamonds [2].
A persistent spectral hole-burning technique has been employed to investigate the impact of uniaxial stress on the defects created by neutron irradiation in natural Ia-type diamond. Shifts of the spectral holes in the 649, 681, and 774 nm zero-phonon lines (ZPLs) have been measured. The values of the shifts, 2.2, 1.2, and 0.65 cm−1/kbar, obtained from these measurements have been compared with the stress shifts of the lines of defects with well-known structure. It is suggested that vacancies are present in the defect responsible for the 681 nm ZPL. A combination of the results of polarized luminescence and uniaxial stress experiments leads to the conclusion of rhombic I symmetry of the defects that give rise to the 649 and 681 nm ZPLs.