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Quantum Electronics

Self-reflection in a system of excitons and biexcitons in semiconductors

P. I. Khadzhi, K. D. Lyakhomskaya

Published Oct 31, 1999• 2 citations
Publisher

Abstract

The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

DOI
10.1070/qe1999v029n10abeh001596

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The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.
The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.
Turbulence and chaos in a semiconductor crystal? These are just some of the intriguing predictions of nonlinear optics with coherent excitons. In this chapter we discuss some aspects of nonlinear coherent optics with the participation of the excitons, photons, and biexcitons. As in many nonlinear systems, these effects arise because of feedback mechanisms, i.e., the light impinging on the system affects the electronic states, which in turn affect the dielectric constant of the medium through which the light passes. These effects are closely related to the phenomena of self-organization [1-8] and optical bistability [7-10] and self-pulsations and the appearance of chaos [2-6]. The cooperative nonlinear coherent processes in optical systems have recently attracted much attention [7-20]. These investigations have stimulated the development of new mathematical methods [21-31] and have opened up possibilities for many new applications. The theoretical and the experimental investigations in these directions give rise to the theory of solitons [32∧2] and lead to the new developments in the optics of ultrashort pulses [43-58]. Ultrafast phenomena such as self-induced transparency and nutation are related to the propagation of solitons and pulse trains, whereas the transient stages of the ultrashort lightpulse penetration in the media are described by area theorems. These coherent ultrafast phenomena typically take place during intervals of time less than the relaxation time, i.e., femtoseconds to picoseconds in typical solids. Collisions and incoherent scattering processes destroy the coherent evolution of the excited particles. But if coherent macroscopic states of the excitons, photons, and biexcitons have been formed because of spontaneous or induced BEC, in this case one can consider their time evolution over intervals of time much greater than the relaxation time.
We report the experimental observation of a self-reflected wave inside a dense saturable absorber. A femtosecond pulse saturates the absorption and causes a density front to penetrate into the semiconductor. The dielectric constant change across the boundary between areas of low and high densities results in internal reflection. Due to the front propagation the self-reflected light is shifted by the Doppler effect. The Doppler shift makes it possible to distinguish between surface reflection and self-reflection and is used to experimentally verify the dynamic nonlinear skin effect. The measurements are in agreement with our theory which is within the framework of the reduced semiconductor Maxwell-Bloch equations.