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Quantum Electronics

Cavity-free optical bistability of a thin semiconductor film in the exciton region of the spectrum

P. I. Khadzhi, A M Rusanov, S L Gaivan

Published Jun 30, 1999• 24 citations
Publisher

Abstract

The amplitude and frequency optical bistability in the transmission and reflection of laser radiation by a thin semiconductor film was investigated. It is caused by the interaction of the radiation with excitons and biexcitons. The appearance of a distinct region with a limit on transmission is predicted for a nonzero detuning from a resonance. A physical interpretation of the predicted characteristic features of the transmission function is given.

DOI
10.1070/qe1999v029n06abeh001526

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•Dec 1, 2005•0 citations
The amplitude and frequency optical bistability in the transmission and reflection of laser radiation by a thin semiconductor film was investigated. It is caused by the interaction of the radiation with excitons and biexcitons. The appearance of a distinct region with a limit on transmission is predicted for a nonzero detuning from a resonance. A physical interpretation of the predicted characteristic features of the transmission function is given.
A theoretical investigation is reported of the coherent nonlinear response of excitons and biexcitons in a thin semiconductor film subjected to resonant laser radiation. It is shown that saturation of an exciton transition results in an abrupt qualitative change in the nature of film transmission from total reflection of the incident pulse at low pump amplitudes to oscillatory reflection at high amplitudes. A new area theorem is derived for ultrashort pulses: it establishes a correspondence between the areas of the incident, transmitted, and reflected pulses. Anomalous transmission and reflection (area 'quantisation') is predicted for large values of the nonlinear parameter. The equations of state, describing bistable behaviour of the amplitudes of the fields of the transmitted and reflected radiation, are derived for quasi-cw operation.
The peculiarities of nonlinear transmission of ultrashort pulses of resonance laser radiation by a semiconductor thin film in the excitonic spectral region have been studied, taking into account the exciton-phonon interaction and concentration gain of the dipole moment of the excitonic transition. It has been shown that under exact resonance conditions the film transmits only the leading edge of the incident rectangular pulse and completely reflects the remaining part. For a nonzero off-resonance, a residual transmission occurs. A series of possibilities for transforming Gaussian pulses is predicted. The state equations for steady-state bistable transmission (reflection) have been derived, and the stability of the solutions has been studied. A theorem of areas, which predicts area restriction of the transmitted pulses, has been stated; namely, the transmitted pulse area cannot exceed π/2.