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Quantum Electronics

The features of light reflection from the interface of a semi-infinite nonlinear crystal upon two-photon excitation of biexcitons

K. D. Lyakhomskaya, L. Yu. Nad’kin, P. I. Khadzhi

Published Jan 31, 2001• 7 citations
Publisher

Abstract

The features of light reflection from the interface of a semi-infinite semiconductor are studied upon two-pulse, two-photon excitation of biexcitons from the crystal ground state. It is shown that the reflectivity is a complex multistable function of the amplitudes of the fields of incident pulses. The appearence of solitary closed domains or horn-shaped structures is predicted.

DOI
10.1070/qe2001v031n01abeh001893

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The features of light reflection from the interface of a semi-infinite semiconductor are studied upon two-pulse, two-photon excitation of biexcitons from the crystal ground state. It is shown that the reflectivity is a complex multistable function of the amplitudes of the fields of incident pulses. The appearence of solitary closed domains or horn-shaped structures is predicted.
Abstract We have studied the nonstationary transmission of two ultrashort laser pulses incident on a thin film. The radiation frequency of one of these pulses is in resonance with the two-photon transition from the ground state of the crystal to the biexciton state, while the other pulse coherently mixes the exciton and biexciton states, leading to strong renormalization of the energy spectrum of the crystal. We have obtained a system of nonlinear equations describing the time evolution of the exciton and biexciton amplitudes and the fields of three pulses transmitted through the film. We have analyzed the effect of amplitudes and widths of incident pulsed and of the time delay between them on the peculiarities of film transmission of these pulses. We have predicted the effect of a substantial time delay in the generation of the pulse transmitted through the film relative to the incident pulse, which is in resonance with the exciton–biexciton transition frequency. The possibility of generation of a precursor, viz., a pulse transmitted through the film sooner than the peak of the incident pulse reaches the film, as well as possibility of generation of a reflected pulse in the absence of the incident pulse, has been proven.
The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.