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Journal of Experimental and Theoretical Physics

Peculiarities in Transmission (Reflection) of Ultrashort Resonant Laser Pulses by a Thin Semiconductor Film in the Conditions of Exciton and Biexciton Excitation

A. V. Corovai, А.Г. МАНГИР, P. I. Khadzhi

Published Jan 1, 2019• 0 citations
Publisher

Abstract

Abstract We have studied the nonstationary transmission of two ultrashort laser pulses incident on a thin film. The radiation frequency of one of these pulses is in resonance with the two-photon transition from the ground state of the crystal to the biexciton state, while the other pulse coherently mixes the exciton and biexciton states, leading to strong renormalization of the energy spectrum of the crystal. We have obtained a system of nonlinear equations describing the time evolution of the exciton and biexciton amplitudes and the fields of three pulses transmitted through the film. We have analyzed the effect of amplitudes and widths of incident pulsed and of the time delay between them on the peculiarities of film transmission of these pulses. We have predicted the effect of a substantial time delay in the generation of the pulse transmitted through the film relative to the incident pulse, which is in resonance with the exciton–biexciton transition frequency. The possibility of generation of a precursor, viz., a pulse transmitted through the film sooner than the peak of the incident pulse reaches the film, as well as possibility of generation of a reflected pulse in the absence of the incident pulse, has been proven.

DOI
10.1134/s1063776118120191

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Abstract We have studied the nonstationary transmission of two ultrashort laser pulses incident on a thin film. The radiation frequency of one of these pulses is in resonance with the two-photon transition from the ground state of the crystal to the biexciton state, while the other pulse coherently mixes the exciton and biexciton states, leading to strong renormalization of the energy spectrum of the crystal. We have obtained a system of nonlinear equations describing the time evolution of the exciton and biexciton amplitudes and the fields of three pulses transmitted through the film. We have analyzed the effect of amplitudes and widths of incident pulsed and of the time delay between them on the peculiarities of film transmission of these pulses. We have predicted the effect of a substantial time delay in the generation of the pulse transmitted through the film relative to the incident pulse, which is in resonance with the exciton–biexciton transition frequency. The possibility of generation of a precursor, viz., a pulse transmitted through the film sooner than the peak of the incident pulse reaches the film, as well as possibility of generation of a reflected pulse in the absence of the incident pulse, has been proven.
A theoretical investigation is reported of the coherent nonlinear response of excitons and biexcitons in a thin semiconductor film subjected to resonant laser radiation. It is shown that saturation of an exciton transition results in an abrupt qualitative change in the nature of film transition from the regime of total reflection of the incident pulse at low pump amplitudes to oscillatory reflection at high amplitudes. A new area theorem is derived for ultrashort pulses: it establishes a correspondence between the areas of the incident, transmitted and reflected pulses. Anomalous transmission and reflection is predicted for large values of the nonlinear parameter. The equations of the state, describing bistable behavior of the amplitudes of the fields of the transmitted and reflected radiation, are derived for quasi-cw operation.
The peculiarities of nonlinear transmission of ultrashort pulses of resonance laser radiation by a semiconductor thin film in the excitonic spectral region have been studied, taking into account the exciton-phonon interaction and concentration gain of the dipole moment of the excitonic transition. It has been shown that under exact resonance conditions the film transmits only the leading edge of the incident rectangular pulse and completely reflects the remaining part. For a nonzero off-resonance, a residual transmission occurs. A series of possibilities for transforming Gaussian pulses is predicted. The state equations for steady-state bistable transmission (reflection) have been derived, and the stability of the solutions has been studied. A theorem of areas, which predicts area restriction of the transmitted pulses, has been stated; namely, the transmitted pulse area cannot exceed π/2.
A theoretical investigation is reported of the coherent nonlinear response of excitons and biexcitons in a thin semiconductor film subjected to resonant laser radiation. It is shown that saturation of an exciton transition results in an abrupt qualitative change in the nature of film transmission from total reflection of the incident pulse at low pump amplitudes to oscillatory reflection at high amplitudes. A new area theorem is derived for ultrashort pulses: it establishes a correspondence between the areas of the incident, transmitted, and reflected pulses. Anomalous transmission and reflection (area 'quantisation') is predicted for large values of the nonlinear parameter. The equations of state, describing bistable behaviour of the amplitudes of the fields of the transmitted and reflected radiation, are derived for quasi-cw operation.