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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Optical phase conjugation with gain in a bulk semiconductor

David O. Caplan

Published Jan 1, 1995• 1 citation
Publisher

Abstract

We experimentally demonstrate a method of high-speed optical amplification using degenerate four-wave mixing in a bulk semiconductor CdTe. In our experiment, both transmitted probe and phase-conjugate beams are amplified in accordance with theory. We propose that this approach, which performs optical splitting with gain, can be used with multiple input signals, leading to potential applications including image amplification, information distribution, and optical computing.

DOI
10.1117/12.216815

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We experimentally demonstrate a method of high-speed optical amplification using degenerate four-wave mixing in a bulk semiconductor CdTe. In our experiment, both transmitted probe and phase-conjugate beams are amplified in accordance with theory. We propose that this approach, which performs optical splitting with gain, can be used with multiple input signals, leading to potential applications including image amplification, information distribution, and optical computing.
Optical phase conjugation through nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has attracted considerable attention in recent years since being first demonstrated by Nakajima and Frey[ 1 ]. Such interest arises due to the very high conjugate reflectivity of order 30-40dB which can be achieved owing to the amplifying effect of the semiconductor gain medium and cavity enhancement of mixing process. However, most previous experimental and theoretical work has placed emphasis on the weak signal case, where the injection signal acts only as a small perturbation of free-running laser diode. It is only very recently that a theoretical analysis of NDFWM in a semiconductor laser subject to strong probe injection power has been presented[2].
We present a detailed theory and experiment on degenerate-multiwave-mixing-mediated beam amplification in the semiconductor silicon. The theory accounts for several important factors, such as coupling to higher-order diffractions, intensity-dependent self- and mutual-phase modulations, losses, phase matchings, intensity ratio among the input beams, etc. In the silicon case under study, involving the generation of electron-hole pairs by 1.06-\ensuremath{\mu}m laser pulses, the intensity-dependent absorption loss and the temporal and/or spatial intensity profile of the input laser beam are also explicitly accounted. The experimental results for probe-gain dependences on several parameters are in good agreement with the theory. The important role played by the side diffractions in mediating the amplification of the probe is also apparent in our experiment on phase conjugation of the probe beam, where a strong dependence of the phase-conjugation reflection on the pump- to probe-beam ratio is observed, similar to the probe-gain dependence.
Summary form only given. Optical phase conjugation through nearly degenerate four-wave mixing (NDFWM) in semiconductor lasers has attracted considerable attention since being first demonstrated by Nakajima and Frey (1985). Such interest arises due to the very high conjugate reflectivity of order 30-40 dB which can be achieved owing to the amplifying effect of the semiconductor gain medium and cavity enhancement of the mixing process. The paper is focused on an experimental study of NDFWM in a two-section single cavity Fabry-Perot (TSSC FP) laser diode for different probe injection powers. We present results on the conjugate reflectivity dependence of the frequency detuning subject to different injection power. It is shown that the conjugate reflectivity is dependent on optical probe injection into either section of a TSSC FP laser diode, injection power and bias current condition.
Photorefractive backward-wave four-wave mixing may be configured for the amplification of the phase conjugate output and the attenuation of the transmitted output. The nondegenerate-in-frequency interaction is studied in such a configuration, realized in a semiconductor CdTe crystal. The spectra measured at different outputs show the gain and attenuation resonances. The preliminary study of optical pulse propagation demonstrates that, due to different nonlinear dispersions at different outputs of the selected wave mixing configuration, a slowing down of light is observed at the phase conjugate output, while an acceleration of light is detected at the transmitted output for the same input pulse at the same interaction.