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Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

Long-time optical oscillating effects in a three-level atomic system placed within photonic crystals

Hiroyuki Nihei, Atsushi Okamoto

Published Nov 13, 2002• 1 citation
Publisher

Abstract

We demonstrate long-time optical oscillating effects in a three-level atomic system placed within 3-D photonic crystals, which can be used in optical functional devices on an atomic scale, such as an optical clock.
DOI
10.1109/cleopr.2001.970975

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The paper describes the spontaneous emission from a three-level atom placed in a periodic dielectric microstructure which exhibits a complete three-dimensional photonic band gap. By using the Euler approach, the upper level population of the atom is calculated for a wide range of relationships between the Rabi frequency and the detuning of the atomic transition frequency from the upper band edge. The results indicate that there are three cases of the relationship between Rabi frequency and detuning, which determine distinctive states of the atomic population in the long-time limit. When the detuning is greater than the Rabi frequency, the upper level has a zero steady-state atomic population, which leads to enhancement of spontaneous emission. When the magnitude of the detuning is less than the Rabi frequency, the upper level has a nonzero steady-state atomic population, which leads to suppression of spontaneous emission. When the negative detuning is greater than the Rabi frequency, the upper level has a nondecaying oscillatory-state atomic population due to long-time atomic splitting. These three properties of the spontaneous emission are relevant to several optical devices on an atomic scale, such as optical memories, switches and clocks.
We calculate the switching time of an optical memory device composed of three-dimensional photonic crystals with an impurity three-level atom, that is, a photonic memory device. We determine the switching time to be a function of the overshoot and the time constant of a decaying oscillation of the upper level population of the impurity atom. The analytical solutions for the overshoot and the time constant are given by using the Euler approach. Using these functions, we calculate the switching time for the Rabi frequency and the transition frequency of the impurity atom. Our results show that the switching time is improved by changing the transition frequency from inside the photonic band gap to outside it and/or by increasing the Rabi frequency, where the transition frequency and the Rabi frequency can be controlled by a small power field. We determine suitable ranges of these frequencies for realizing a high-speed photonic memory device, which are important for atomic-scale optical systems such as high-density integrated optical circuits and quantum computers.
We propose all-optical switching schemes using a single three-level atomic system placed within a 3D photonic crystal that exhibits a complete 3D photonic band gap. The optical schemes we propose can be classified into two types with respect to a physical process that causes the switching effect. One switching type is mediated by changing an atom-field coupling strength. The other switching type is mediated by controlling quantum interference. Furthermore, we consider conditions of realizing a wide range of signals, which contributes to an improvement of the Signal to Noise ratio. The phases and strengths of the external laser fields required for the all-optical switching are revealed. Next, we estimate their switching times. Using these results, we propose the fastest scheme for every configuration of the atomic system, which is important for realizing a high-speed optical memory or switching device on an atomic scale that can be used in novel optical integrated systems, such as quantum computers.