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Japanese Journal of Applied Physics

Switching Time of Optical Memory Devices Composed of Photonic Crystals with an Impurity Three-Level Atom

Hiroyuki Nihei, Atsushi Okamoto

Published Dec 1, 2001• 15 citations
Publisher

Abstract

We calculate the switching time of an optical memory device composed of three-dimensional photonic crystals with an impurity three-level atom, that is, a photonic memory device. We determine the switching time to be a function of the overshoot and the time constant of a decaying oscillation of the upper level population of the impurity atom. The analytical solutions for the overshoot and the time constant are given by using the Euler approach. Using these functions, we calculate the switching time for the Rabi frequency and the transition frequency of the impurity atom. Our results show that the switching time is improved by changing the transition frequency from inside the photonic band gap to outside it and/or by increasing the Rabi frequency, where the transition frequency and the Rabi frequency can be controlled by a small power field. We determine suitable ranges of these frequencies for realizing a high-speed photonic memory device, which are important for atomic-scale optical systems such as high-density integrated optical circuits and quantum computers.

DOI
10.1143/jjap.40.6835

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We calculate the switching time of an optical memory device composed of three-dimensional photonic crystals with an impurity three-level atom, that is, a photonic memory device. We determine the switching time to be a function of the overshoot and the time constant of a decaying oscillation of the upper level population of the impurity atom. The analytical solutions for the overshoot and the time constant are given by using the Euler approach. Using these functions, we calculate the switching time for the Rabi frequency and the transition frequency of the impurity atom. Our results show that the switching time is improved by changing the transition frequency from inside the photonic band gap to outside it and/or by increasing the Rabi frequency, where the transition frequency and the Rabi frequency can be controlled by a small power field. We determine suitable ranges of these frequencies for realizing a high-speed photonic memory device, which are important for atomic-scale optical systems such as high-density integrated optical circuits and quantum computers.
We propose all-optical switching schemes using a single three-level atomic system placed within a 3D photonic crystal that exhibits a complete 3D photonic band gap. The optical schemes we propose can be classified into two types with respect to a physical process that causes the switching effect. One switching type is mediated by changing an atom-field coupling strength. The other switching type is mediated by controlling quantum interference. Furthermore, we consider conditions of realizing a wide range of signals, which contributes to an improvement of the Signal to Noise ratio. The phases and strengths of the external laser fields required for the all-optical switching are revealed. Next, we estimate their switching times. Using these results, we propose the fastest scheme for every configuration of the atomic system, which is important for realizing a high-speed optical memory or switching device on an atomic scale that can be used in novel optical integrated systems, such as quantum computers.
The paper describes the spontaneous emission from a three-level atom placed in a periodic dielectric microstructure which exhibits a complete three-dimensional photonic band gap. By using the Euler approach, the upper level population of the atom is calculated for a wide range of relationships between the Rabi frequency and the detuning of the atomic transition frequency from the upper band edge. The results indicate that there are three cases of the relationship between Rabi frequency and detuning, which determine distinctive states of the atomic population in the long-time limit. When the detuning is greater than the Rabi frequency, the upper level has a zero steady-state atomic population, which leads to enhancement of spontaneous emission. When the magnitude of the detuning is less than the Rabi frequency, the upper level has a nonzero steady-state atomic population, which leads to suppression of spontaneous emission. When the negative detuning is greater than the Rabi frequency, the upper level has a nondecaying oscillatory-state atomic population due to long-time atomic splitting. These three properties of the spontaneous emission are relevant to several optical devices on an atomic scale, such as optical memories, switches and clocks.
For a three-level Λ-type atom embedded in three-dimensional photonic crystals (PCs), the upper state population and spontaneous emission spectra are investigated with both transitions coupled to the same modified reservoir. By using an anisotropic dispersion model the analytic expressions of the upper state population and spontaneous emission spectra were obtained. The upper state population reaches a steady state value with a slight oscillation, and the spectra show a non-Lorentzian for both transition frequencies inside the band gap.
Summary form only given. Unlike semiconductors which facilitate the coherent propagation of electrons, photonic band gap (PBG) materials execute their novel functions through the coherent localization of photons. When a PBG material is doped with impurity atoms which have an electronic transition that lies within the gap, spontaneous emission of light from the atom is inhibited. Inside the gap, the photon forms a bound state to the atom. Outside the gap, radiative dynamics in the colored vacuum is highly nonMarkovian. I discuss the influence of these memory effects on laser action. When spontaneous emission is absent, the next order radiative effect (resonance dipole-dipole interaction between atoms) must be incorporated, leading to anomalous nonlinear optical effects which occur at a much lower threshold than in ordinary vacuum. I describe the collective switching of two-level atoms near a photonic band edge, by external laser field, from a passive stare to one exhibiting population inversion. This effect is forbidden in ordinary vacuum. Finally, I discuss the prospects for a phase sensitive, single (3-level) atom quantum memory device, onto which information may be written by an external laser pulse. By scattering polarized photons (flying qubit) this system may execute certain quantum logic operations.