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European Quantum Electronics Conference (EQEC)

Atom Lithography In Two-dimensional polarization gradient light fields

B. Brezger, Piet O. Schmidt, T. Schulze, A.S. Bell, Tilman Pfau, J. Mlynek

Published Aug 24, 2005• 0 citations
Publisher
DOI
10.1109/eqec.1998.714731

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Summary form only given.Using neutral atoms for lithography is a new method of generating nanostructures on a substrate. This method is based on light masks formed by interfering laser beams perpendicular to the atomic beam. One- and two-dimensional periodic structures have been fabricated by various groups using light masks with intensity gradients and uniform polarization. The resulting periods are half the laser wavelength or greater. Atoms with a magnetic substructure in the electronic ground state are strongly sensitive to light polarization and static magnetic fields. Our work presents a detailed investigation of possible two-dimensional light field configurations including polarization gradients and static magnetic fields. The resulting nanostructures obtained in an experimentally realistic situation are simulated.
In atom lithography, neutral atoms are focused by laser light to form a periodic pattern on a substrate. We have realized two-dimensional structuring of chromium on a silicon substrate employing a polarization gradient light mask with uniform intensity. The generated structures exhibit peak-to-peak distances below half the laser wavelength. The results are explained by a theoretical model which takes into account the magnetic substructure of the atomic transition employed and the influence of a static magnetic field.
Generally, conditions for deep sub-Doppler laser cooling do not match conditions for strong atomic localization, that takes place in a deeper optical potential and leads to higher temperature. Moreover, for a given detuning in a deep optical potential the secular approximation, which is frequently used for a quantum description of laser cooling, fails. Here we investigate the atomic localization in optical potential, using a full quantum approach for atomic density matrix beyond the secular approximation. It is shown that laser cooling in a deep optical potential, created by a light field with polarization gradients, can be used as an alternative method for the formation of high contrast spatially localized structures of atoms for the purposes of atom lithography and atomic nanofabrication. Finally, we analyze possible limits for the width and contrast of localized atomic structures that can be reached in this type of light mask.