Quantum lithography: status of the field

B. Brezger, Piet O. Schmidt, T. Schulze +3 more

George P. Miroshnichenko

Robert W. Boyd, Sean J. Bentley

We review the status of the field of quantum lithography, that is, the use of quantum-mechanical effects to write lithographic features with resolution finer than that achievable according to the Rayleigh criterion. In particular, we first review the original quantum lithography proposal by Boto et al., and we then describe the status of research aimed at realizing this process.

Mingdong Liu, Hai-Hua Wang, Lei Wang +5 more

Abstract We theoretically propose a scheme that utilizes the excited state of a Λ-type three-level atom system for atom lithography. A standing-wave coupling field and a probe field provide localized probability distribution of the excited atoms. Unlike the previous studies in atom localization, we focus on splitting the single-peak structure localized on the node of the standing-wave field to a double-peak structure. The shift distance of double-peak related to the parameters of external laser fields is investigated. The period of lithography pattern could reach λ/4, while the resolution of lithography is promising to be smaller than 0.02λ by adjusting system parameters. This scheme can be extended to form a two-dimensional pattern for lithography.

Colin P. Williams, Pieter Kok, Hwang Lee +1 more

Yanhua H. Shih