Quantum lithography on bound-free transitions

Robert W. Boyd, Jonathan P. Dowling

Zeyang Liao, M. Al-Amri, Muhammad Suhail Zubairy

We propose a quantum optical method to do the subwavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. It is expected to be realizable using current technology.

Colin P. Williams, Pieter Kok, Hwang Lee +1 more

Zeyang Liao, M. Al-Amri, Muhammad Suhail Zubairy

We propose a quantum optical method to do the subwavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. It is expected to be realizable using current technology.

Milena D’Angelo, Maria V. Chekhova, Yanhua H. Shih

Fam Le Kien, Subhasish Dutta Gupta, K. Hakuta

We study phonon-mediated transitions between translational levels of an atom in a surface-induced potential. We present a general master equation governing the dynamics of the translational states of the atom. In the framework of the Debye model, we derive compact expressions for the rates for both upward and downward transitions. Numerical calculations for the transition rates are performed for a deep silica-induced potential allowing for a large number of bound levels as well as free states of a cesium atom. The total absorption rate is shown to be determined mainly by the bound-to-bound transitions for deep bound levels and by bound-to-free transitions for shallow bound levels. Moreover, the phonon emission and absorption processes can be orders of magnitude larger for deep bound levels as compared to the shallow bound ones. We also study various types of transitions from free states. We show that, for thermal atomic cesium with a temperature in the range from $100\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{K}\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}400\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{K}$ in the vicinity of a silica surface with a temperature of $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, the adsorption (free-to-bound decay) rate is about two times larger than the heating (free-to-free upward decay) rate, while the cooling (free-to-free downward decay) rate is negligible.