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Development of components for submillimeter wave heterodyne radiometers at JPL

M. A. Frerking, B. D. Hunt, Henry George LeDuc, William R. McGrath, Peter H. Siegel, Timo J. Tolmunen

Published Dec 1, 1990• 1 citation
OpenAlex

Abstract

Components for the key elements of submillimeter wave heterodyne receivers are described. The devices and components are inherently space qualifiable having low power and mass needs and exhibiting robustness. Nb and NbN superconductor insulator superconductor (SIS) tunnel junctions are selected for the nonlinear mixing element because of their robustness. NbN exhibits a large superconducting bandgap, allowing operation in excess of 1500 GHz. Both waveguide mounts, for the lower frequencies and planar antenna mixer mounts for the higher frequency range, are used. Quasi-optical components are used for frequency multiplexing and combining.

Related papers

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology - art. no. 684013

Jing Li, Takeda Masanon, Zhen Wang

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.

•Jan 1, 2008•0 citations

Fabrication and characterization of high current-density, submicron, NbN/MgO/NbN tunnel junctions

Jeff A. Stern, Henry George LeDuc, A. Judas

At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certain device properties should be scaled. The tunnel-junction's current density should be increased to reduce the RC product. The device's area should be reduced to efficiently couple power from the antenna to the mixer. Finally, the superconductor used should have a large energy gap to minimize RF losses. Most SIS mixers use Nb or Pb-alloy tunnel junctions; the gap frequency for these materials is approximately 725 GHz. Above the gap frequency, these materials exhibit losses similar to those in a normal metal. The gap frequency in NbN films is as-large-as 1440 GHz. Therefore, we have developed a process to fabricate small area (down to 0.13 sq microns), high current density, NbN/MgO/NbN tunnel junctions.

•Jan 1, 1992•12 citations

0.5-THz waveguide SIS mixers with NbN/AlN/NbN technology

Jing Li, Masanori Takeda, Zhen Wang +1 more

Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 29, 2007•3 citations

Quasi-optical submillimeter-wave SIS mixers with NbN/A1N/NbN tunnel junctions

Yoshinori Uzawa, Zhen Wang, Akira Kawakami

We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.

•Mar 1, 1996•2 citations

Performance of an SIS receiver over 460 GHz to 640 GHz using submicron Nb junctions with integrated RF tuning circuits

Pascal Febvre

The most sensitive heterodyne receivers used formillimeter wave and submillimeter wave radioastronomyemploy superconductor-insulator-superconductor (SIS)tunnel junctions as the nonlinear mixing element. Goodperformance has recently been reported for SIS junctionsused in planar mixer circuits and waveguide mixers fromabout 300 GHz to 500 GHz. We have developed asubmillimeter wave SIS heterodyne receiver for observingimportant rotational transitions of molecules in theinterstellar medium near 550 GHz and 630 GHz. Thisreceiver is based on a waveguide mixer with an adjustablebackshort and E-plane tuner [1]. The mixer uses a highcurrent density, 0.25 gm2 Nb-A1Ox-Nb tunnel junctiondefined by electron beam lithography [2]. The capacitanceof the junction is compensated with an integrated RFsuperconductive microstrip tuning circuit. The receiverperformance has been measured over the frequency range460 GHz to 640 GHz. DSB receiver noise temperatures aslow as 200 ± 17 K at 540 GHz and 362 ± 33 K at626 GHz have been obtained. In addition, negativedifferential resistance has been observed in the DC I-Vcurve at frequencies around 491 GHz. These results indicatethat the superconductive Nb microstrip transmission linesused in the tuning circuits are low-loss and perform well upto at least 90% of the superconductor energy gap frequency.

International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)•Aug 30, 1993•0 citations

Waveguide receiver design prototypes for the 211–275 GHz and 790–950 GHz frequency ranges

Kirill I. Rudakov, Pavel Dmitriev, Andrey M. Baryshev +4 more

Superconductor-insulator-superconductor (SIS) mixers are the most sensitive heterodyne receivers for mm and submm wavelengths. SIS mixers are installed on all state of the art submm observatories such as the Atacama Large Millimeter array (ALMA) and the Atacama Pathfinder Experiment (APEX). Recently, an improved type of Nb/AlN/NbN SIS junction has become available that combines higher gap voltage with high current density. This opens new parametric space for further improvement of the SIS mixer's performance and bandwidth both for frequencies higher and lower than the gap frequency of Nb (700 GHz). In this contribution we will describe designs of SIS mixers based on a new type of SIS junction, both for high (~900 GHz) and low (~200 GHz) frequencies.

URSI General Assembly and Scientific Symposium•Aug 1, 2017•0 citations
Components for the key elements of submillimeter wave heterodyne receivers are described. The devices and components are inherently space qualifiable having low power and mass needs and exhibiting robustness. Nb and NbN superconductor insulator superconductor (SIS) tunnel junctions are selected for the nonlinear mixing element because of their robustness. NbN exhibits a large superconducting bandgap, allowing operation in excess of 1500 GHz. Both waveguide mounts, for the lower frequencies and planar antenna mixer mounts for the higher frequency range, are used. Quasi-optical components are used for frequency multiplexing and combining.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
At near-millimeter wavelengths, heterodyne receivers based on SIS tunnel junctions are the most sensitive available. However, in order to scale these results to submillimeter wavelengths, certain device properties should be scaled. The tunnel-junction's current density should be increased to reduce the RC product. The device's area should be reduced to efficiently couple power from the antenna to the mixer. Finally, the superconductor used should have a large energy gap to minimize RF losses. Most SIS mixers use Nb or Pb-alloy tunnel junctions; the gap frequency for these materials is approximately 725 GHz. Above the gap frequency, these materials exhibit losses similar to those in a normal metal. The gap frequency in NbN films is as-large-as 1440 GHz. Therefore, we have developed a process to fabricate small area (down to 0.13 sq microns), high current density, NbN/MgO/NbN tunnel junctions.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
The most sensitive heterodyne receivers used formillimeter wave and submillimeter wave radioastronomyemploy superconductor-insulator-superconductor (SIS)tunnel junctions as the nonlinear mixing element. Goodperformance has recently been reported for SIS junctionsused in planar mixer circuits and waveguide mixers fromabout 300 GHz to 500 GHz. We have developed asubmillimeter wave SIS heterodyne receiver for observingimportant rotational transitions of molecules in theinterstellar medium near 550 GHz and 630 GHz. Thisreceiver is based on a waveguide mixer with an adjustablebackshort and E-plane tuner [1]. The mixer uses a highcurrent density, 0.25 gm2 Nb-A1Ox-Nb tunnel junctiondefined by electron beam lithography [2]. The capacitanceof the junction is compensated with an integrated RFsuperconductive microstrip tuning circuit. The receiverperformance has been measured over the frequency range460 GHz to 640 GHz. DSB receiver noise temperatures aslow as 200 ± 17 K at 540 GHz and 362 ± 33 K at626 GHz have been obtained. In addition, negativedifferential resistance has been observed in the DC I-Vcurve at frequencies around 491 GHz. These results indicatethat the superconductive Nb microstrip transmission linesused in the tuning circuits are low-loss and perform well upto at least 90% of the superconductor energy gap frequency.
Superconductor-insulator-superconductor (SIS) mixers are the most sensitive heterodyne receivers for mm and submm wavelengths. SIS mixers are installed on all state of the art submm observatories such as the Atacama Large Millimeter array (ALMA) and the Atacama Pathfinder Experiment (APEX). Recently, an improved type of Nb/AlN/NbN SIS junction has become available that combines higher gap voltage with high current density. This opens new parametric space for further improvement of the SIS mixer's performance and bandwidth both for frequencies higher and lower than the gap frequency of Nb (700 GHz). In this contribution we will describe designs of SIS mixers based on a new type of SIS junction, both for high (~900 GHz) and low (~200 GHz) frequencies.