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arXiv:2608.19696

Coherence protection of a silicon hole spin qubit with phase-modulated microwave driving

Sayyid I. Ibad, Yusuke Sato, Takuma Kuno, Itaru Yanagi, Toshiyuki Mine, Ryuta Tsuchiya, Digh Hisamoto, Hiroyuki Mizuno, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera

cond-mat.mes-hallquant-phSubmitted Aug 20, 2026• Announced Aug 21, 2026• Revised Oct 25, 2026 (v2)
v1 · Aug 20, 2026v2 · Oct 25, 2026
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Abstract

Hole spins in silicon quantum dots are a promising platform for quantum computing due to their strong intrinsic spin-orbit coupling (SOC), which enables fast, all-electrical control. However, this coupling also increases their susceptibility to charge noise, thereby limiting coherence times. Moreover, holes in silicon are also affected by hyperfine interactions with residual nuclear spins in the silicon substrate, introducing a non-negligible source of low-frequency noise. Here, we implement a phase-modulated concatenated continuous driving (CCD) technique for hole spin qubits to suppress low-frequency noise through microwave phase modulation. This approach stabilizes Rabi oscillations and extends the oscillation decay time compared to the conventional method. Furthermore, by defining a qubit in the CCD frame, we achieve coherent control while simultaneously protecting the qubit from noise, confirming coherence protection during gate operations. These results demonstrate a viable route toward noise-robust hole spin qubits.

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The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit $T_{2}^{\rm{Rabi}}>T_{2}^*$. Building on this principle, concatenated continuous driving (CCD) keeps the qubit under continuous drive to suppress noise and manipulate dressed states by either phase or amplitude modulation. In this work, we propose a variant of CCD which simultaneously modulates both the amplitude and phase of the driving field to generate a circularly polarized field in the rotating frame of the carrier frequency. This circular-modulated CCD(CMCCD) cancels the counter-rotating term in the second rotating frame, eliminating a systematic pulse-area error that arises from an imperfect rotating wave approximation for fast gates. Numerical simulations demonstrate that the proposed CMCCD achieves higher gate fidelity than conventional CCD schemes. We further implement and compare different CCD protocols using an electron spin-qubit in an isotopically purified $^{28}$Si-MOS quantum dot and evaluate its robustness by applying static detuning and Rabi frequency errors. The robustness is significantly improved compared with the standard Rabi drive, showing the effectiveness of this scheme for qubit arrays with variation in qubit frequency, coupling to the Rabi drive, and low-frequency noise. The proposed scheme can be applied to various physical systems, including trapped atoms, cold atoms, superconducting qubits, and NV centers.

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Wei-Zhu Liao, Ao-Ran Li, Zhen-Zhen Kong +6 more

Abstract Spin qubits based on semiconductor quantum dots have recently emerged as strong candidates for scalable quantum computation. However, due to substantial charge noise in the system, the coherence time remains insufficient to support large-scale quantum computations. Moreover, the fidelity of idle gates is severely degraded by the short dephasing time, which may compromise the overall quality of full quantum algorithms. Here, we demonstrate a circular-modulated concatenated continuous driving (CM-CCD) qubit realized in $^{28}$Si metal-oxide-semiconductor (SiMOS) devices to overcome this challenge. This scheme significantly enhances the qubit's resilience to noise and substantially improves its coherence: the dephasing time $T_{2}^{*}$ is extended from $717.7\ \text{ns}$ to $101.5\ \mu\text{s}$, and the Rabi coherence time $T_{2}^{\text{Rabi}}$ is improved from $7.8\ \mu\text{s}$ to $77.6\ \mu\text{s}$. We further propose a scheme to resolve the timing misalignment of CCD-based idle gates, improving the idle gate fidelity from 95.95% to 99.01%. Collectively, these results demonstrate that the CCD scheme offers a promising pathway to overcome the idle-gate challenge in large-scale quantum computations.

Chinese Physics B•Jun 16, 2026•0 citations
Hole spins in silicon quantum dots are a promising platform for quantum computing due to their strong intrinsic spin-orbit coupling (SOC), which enables fast, all-electrical control. However, this coupling also increases their susceptibility to charge noise, thereby limiting coherence times. Moreover, holes in silicon are also affected by hyperfine interactions with residual nuclear spins in the silicon substrate, introducing a non-negligible source of low-frequency noise. Here, we implement a phase-modulated concatenated continuous driving (CCD) technique for hole spin qubits to suppress low-frequency noise through microwave phase modulation. This approach stabilizes Rabi oscillations and extends the oscillation decay time compared to the conventional method. Furthermore, by defining a qubit in the CCD frame, we achieve coherent control while simultaneously protecting the qubit from noise, confirming coherence protection during gate operations. These results demonstrate a viable route toward noise-robust hole spin qubits.
The rate of coherence loss is lower for a qubit under the Rabi drive than a freely evolving qubit T2Rabi>T2∗T_{2}^{\rm{Rabi}}>T_{2}^*T2Rabi​>T2∗​. Building on this principle, concatenated continuous driving (CCD) keeps the qubit under continuous drive to suppress noise and manipulate dressed states by either phase or amplitude modulation. In this work, we propose a variant of CCD which simultaneously modulates both the amplitude and phase of the driving field to generate a circularly polarized field in the rotating frame of the carrier frequency. This circular-modulated CCD(CMCCD) cancels the counter-rotating term in the second rotating frame, eliminating a systematic pulse-area error that arises from an imperfect rotating wave approximation for fast gates. Numerical simulations demonstrate that the proposed CMCCD achieves higher gate fidelity than conventional CCD schemes. We further implement and compare different CCD protocols using an electron spin-qubit in an isotopically purified 28^{28}28Si-MOS quantum dot and evaluate its robustness by applying static detuning and Rabi frequency errors. The robustness is significantly improved compared with the standard Rabi drive, showing the effectiveness of this scheme for qubit arrays with variation in qubit frequency, coupling to the Rabi drive, and low-frequency noise. The proposed scheme can be applied to various physical systems, including trapped atoms, cold atoms, superconducting qubits, and NV centers.
Exchange-based two-qubit gates in semiconductor spin qubits are sensitive to low-frequency detuning noise and control errors. Here, we extend concatenated continuous driving (CCD), implemented by phase modulation of a global microwave drive, to exchange-based SWAP and SWAP\sqrt{\mathrm{SWAP}}SWAP​ operations between double-dressed spin qubits and investigate its effectiveness for protecting two-qubit gates. We find that CCD retains strong protection against quasistatic common-mode detuning errors while substantially improving robustness against Rabi-frequency errors and qubit-to-qubit Rabi-frequency mismatch compared with conventional continuous dressing. By contrast, the gate fidelity is impacted by differential detuning errors. By modeling partially correlated quasistatic detuning noise, we further show that the noise-averaged gate fidelity depends strongly on the spatial correlation of the qubit-frequency fluctuations, with positive correlations enhancing CCD protection by suppressing the differential-noise component. These results identify the symmetry and spatial correlation of qubit-frequency noise as key factors governing continuous-drive protection in coupled spin-qubit systems.
Hole spin qubits in semiconductor quantum dots (QDs) are promising candidates for quantum information processing due to their weak hyperfine coupling to nuclear spins, and to the strong spin-orbit coupling, which allows for rapid operation time. We propose a coherent control on two heavy-hole spin qubits in a double QD by a fast adiabatic driving protocol, which helps to achieve higher fidelities than other experimentally commonly used protocols as linear ramping, $\ensuremath{\pi}$ pulses or Landau-Zener passages. Using fast quasiadiabatic driving via spin-orbit coupling, it is possible to reduce charge noise significantly for qubit manipulation and achieve high robustness for the qubit initialization. We also implement one- and two-qubit gates, in particular, not, cnot, and swaplike gates, of hole spins in a double QD achieving fidelities above $99\mathrm{%}$, exhibiting the capability of hole spins to implement universal gates for quantum computing.
Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms spatial disorder into time-dependent noise, its net impact on spin coherence remains an open question. Here we demonstrate systematic noise mitigation during spin shuttling in a linear 28^{28}28Si/SiGe quantum dot device. First, by passively reducing magnetic field gradients, we minimize charge-noise coupling to the spin and double the spatially averaged dephasing time T2∗(xn)T_2^*(x_n)T2∗​(xn​) from 4.44.44.4 to 8.5 μs8.5\,μ\text{s}8.5μs. Next, we exploit motional narrowing by periodically shuttling the qubit, achieving a further enhancement in coherence time up to T2∗,sh=11.5 μsT_{2}^{*,sh} = 11.5\,μ\text{s}T2∗,sh​=11.5μs. Finally, we incorporate dynamical decoupling techniques while periodically shuttling over distances exceeding 200 nm200\,\text{nm}200nm, reaching T2H,sh=32 μsT_\text{2}^{H,sh}= 32\,μ\text{s}T2H,sh​=32μs. For the same setup, we demonstrate that dressed-state shuttling provides robust protection against low-frequency noise with a decay time TRsh=21 μsT_R^{\text{sh}} = 21\,μ\text{s}TRsh​=21μs, without the overhead of pulsed control and allowing protection during one-way spin transport. By preserving coherence over timescales exceeding typical gate and readout operations, the demonstrated strategies establish mobile spin qubits as a viable solution for scalable silicon quantum processors.
Hole spin qubits are frontrunner platforms for scalable quantum computers because of their large spin-orbit interaction that enables ultrafast all-electric qubit control at low power. The fastest spin qubits to date are defined in long quantum dots with two tight confinement directions, when the driving field is aligned to the smooth direction. However, in these systems the lifetime of the qubit is strongly limited by charge noise, a major issue in hole qubits. We propose here a different, scalable qubit design, compatible with planar CMOS technology, where the hole is confined in a curved germanium quantum well surrounded by silicon. This design takes full advantage of the strong spin-orbit interaction of holes, and at the same time suppresses charge noise in a wide range of configurations, enabling highly coherent, ultrafast qubit gates. While here we focus on a Si\mathrm{Si}Si/Ge\mathrm{Ge}Ge/Si\mathrm{Si}Si curved quantum well, our design is also applicable to different semiconductors. These devices allow for ultrafast operations even in short quantum dots by a transversal electric field. This additional driving mechanism relaxes the demanding design constraints, and offers a way to reliably interface spin qubits in a single quantum dot to microwave photons. By considering state-of-the-art high-impedance resonators and realistic qubit designs, we estimate interaction strengths of a few hundreds of megahertz, largely exceeding the decay rate of spins and photons. Reaching such a strong coupling regime in hole spin qubits will be a significant step towards high-fidelity entangling operations between distant qubits, as well as fast single-shot readout, and could pave the way towards the implementation of a large-scale semiconducting quantum processor.
Abstract Spin qubits based on semiconductor quantum dots have recently emerged as strong candidates for scalable quantum computation. However, due to substantial charge noise in the system, the coherence time remains insufficient to support large-scale quantum computations. Moreover, the fidelity of idle gates is severely degraded by the short dephasing time, which may compromise the overall quality of full quantum algorithms. Here, we demonstrate a circular-modulated concatenated continuous driving (CM-CCD) qubit realized in 28^{28}28Si metal-oxide-semiconductor (SiMOS) devices to overcome this challenge. This scheme significantly enhances the qubit's resilience to noise and substantially improves its coherence: the dephasing time T2∗T_{2}^{*}T2∗​ is extended from 717.7 ns717.7\ \text{ns}717.7 ns to 101.5 μs101.5\ \mu\text{s}101.5 μs, and the Rabi coherence time T2RabiT_{2}^{\text{Rabi}}T2Rabi​ is improved from 7.8 μs7.8\ \mu\text{s}7.8 μs to 77.6 μs77.6\ \mu\text{s}77.6 μs. We further propose a scheme to resolve the timing misalignment of CCD-based idle gates, improving the idle gate fidelity from 95.95% to 99.01%. Collectively, these results demonstrate that the CCD scheme offers a promising pathway to overcome the idle-gate challenge in large-scale quantum computations.