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arXiv:2602.09179

Coherence Protection for Mobile Spin Qubits in Silicon

Jan A. Krzywda, Yuta Matsumoto, Maxim De Smet, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Evert van Nieuwenburg, Giordano Scappucci, Lieven M. K. Vandersypen

cond-mat.mes-hallquant-phSubmitted Feb 9, 2026• Announced Feb 11, 2026• Revised Feb 11, 2026 (v2)
v1 · Feb 9, 2026v2 · Feb 11, 2026
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Abstract

Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms spatial disorder into time-dependent noise, its net impact on spin coherence remains an open question. Here we demonstrate systematic noise mitigation during spin shuttling in a linear $^{28}$Si/SiGe quantum dot device. First, by passively reducing magnetic field gradients, we minimize charge-noise coupling to the spin and double the spatially averaged dephasing time $T_2^*(x_n)$ from $4.4$ to $8.5\,μ\text{s}$. Next, we exploit motional narrowing by periodically shuttling the qubit, achieving a further enhancement in coherence time up to $T_{2}^{*,sh} = 11.5\,μ\text{s}$. Finally, we incorporate dynamical decoupling techniques while periodically shuttling over distances exceeding $200\,\text{nm}$, reaching $T_\text{2}^{H,sh}= 32\,μ\text{s}$. For the same setup, we demonstrate that dressed-state shuttling provides robust protection against low-frequency noise with a decay time $T_R^{\text{sh}} = 21\,μ\text{s}$, without the overhead of pulsed control and allowing protection during one-way spin transport. By preserving coherence over timescales exceeding typical gate and readout operations, the demonstrated strategies establish mobile spin qubits as a viable solution for scalable silicon quantum processors.

Comments
Code Repository: https://github.com/jaq-lab/mobile-qubit-protection | Raw Data: https://doi.org/10.5281/zenodo.18470200

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Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms spatial disorder into time-dependent noise, its net impact on spin coherence remains an open question. Here we demonstrate systematic noise mitigation during spin shuttling in a linear 28^{28}28Si/SiGe quantum dot device. First, by passively reducing magnetic field gradients, we minimize charge-noise coupling to the spin and double the spatially averaged dephasing time T2∗(xn)T_2^*(x_n)T2∗​(xn​) from 4.44.44.4 to 8.5 μs8.5\,μ\text{s}8.5μs. Next, we exploit motional narrowing by periodically shuttling the qubit, achieving a further enhancement in coherence time up to T2∗,sh=11.5 μsT_{2}^{*,sh} = 11.5\,μ\text{s}T2∗,sh​=11.5μs. Finally, we incorporate dynamical decoupling techniques while periodically shuttling over distances exceeding 200 nm200\,\text{nm}200nm, reaching T2H,sh=32 μsT_\text{2}^{H,sh}= 32\,μ\text{s}T2H,sh​=32μs. For the same setup, we demonstrate that dressed-state shuttling provides robust protection against low-frequency noise with a decay time TRsh=21 μsT_R^{\text{sh}} = 21\,μ\text{s}TRsh​=21μs, without the overhead of pulsed control and allowing protection during one-way spin transport. By preserving coherence over timescales exceeding typical gate and readout operations, the demonstrated strategies establish mobile spin qubits as a viable solution for scalable silicon quantum processors.
Reliable long-range qubit shuttling is a powerful tool for scalable quantum computing architectures. We investigate strategies to improve the coherence of moving spin qubits by performing continuous dynamical decoupling by modulating their confinement potential. Specifically, we introduce temporal and spatial breathing shuttling protocols that leverage spin-orbit interactions in hole-spin systems to electrically drive the qubit while moving. This enables efficient dressed-state shuttling, where the spin is continuously rotated during transport, suppressing the effect of low-frequency noise. Using the filter function formalism, we identify driving regimes that efficiently mitigate both global and local magnetic and electric noise sources. We find that confinement-modulated shuttling can significantly enhance coherence during transport, while revealing distinct limitations depending on the correlation length of the noise. Applying our framework to germanium hole-spin qubits, we show that these protocols provide a practical route toward noise-resilient long-range coherent quantum links.
Abstract Quantum information transport over micron to millimeter scale distances is critical for the operation of practical quantum processors based on spin qubits. One method of achieving a long-range interaction is by coherent electron spin shuttling through an array of silicon quantum dots. In order to execute many shuttling operations with high fidelity, it is essential to understand the dynamics of qubit dephasing and relaxation during the shuttling process in order to mitigate them. However, errors arising after many repeated shuttles are not yet well documented. Here, we probe decay dynamics contributing to dephasing and relaxation of a singlet-triplet qubit during coherent spin shuttling over many N repeated shuttle operations. We find that losses are dominated by magnetic dephasing for small N<\i> < 103 and by incoherent shuttle errors for large N<\i> > 103<\sup>. Additionally, we estimate shuttle error rates below 1×10-4<\sup> out to at least N<\i>=103<\sup>, representing an encouraging figure for future implementations of spin shuttling to entangle distant qubits.
Single spin quantum dot qubits in silicon are a promising candidate for a scalable quantum processor due to their long coherence times, compact size, and ease of integration into existing fabrication technologies. Realizing a large quantum processor composed of thousands or more logical qubits requires the integration of conventional transistor circuitry \nand wiring interconnects to control each individual dot in the processor. The high density of control wiring required for these processors presents many engineering challenges. In this thesis, we propose a surface code quantum processor for silicon quantum dot qubits based on a node/network architecture. Local nodes consisting of just seven quantum dots are \nspatially separated on the order of microns to facilitate space for the necessary high density wiring. Entanglement is distributed between individual nodes via shuttling of entangled electron pairs throughout the network. X or Z stabilizer operations, necessary for operating the surface code, are realized by distributing three electron spin singlet pairs across four local nodes followed by local gate operations and ancilla measurements. Simulations of electron shuttling indicate that adiabatic transport is possible on timescales that do not bottleneck the processor speed. Phase rotation of the shuttled spin, induced by the Stark shift, can lower the overall shuttling fi delity; however, the error can be mitigated by proper electrostatic tuning of the stationary electron's g-factor. Using realistic noise models, we estimate error thresholds with respect to single and two-qubit gate fidelities as well as \nsinglet dephasing errors during shuttling. Electron shuttling is a key resource of the proposed network architecture. 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In this regime, we find that the primary source of infi delity is a coherent spin rotation that is correctable, in principle, using single spin rotations. Two-qubit gates in the network architecture are mediated by the exchange interaction, \nan interaction that stems from the Coulomb interaction but manifests as a rotation between the |0,1> and |1,0> two qubit states. Realizing fault tolerant two-qubit gates has proven difficult in silicon quantum dots due to charge noise which perturbs the electron orbitals states, causing decoherence. Quantitatively accurate modelling of exchange in general quantum dot networks is important towards realizing fault tolerant gates. Traditional modelling methods, such as a full con figuration interaction approach, are cumbersome due to significant computational overhead required when accounting for the electron-electron interactions in the calculation. We present a modi ed linear combination of harmonic orbitals con figuration interaction (LCHO-CI) approach which signifi cantly reduces the computational time for obtaining quantitatively accurate estimations of exchange. The method works by approximating the single electron orbitals of the quantum dot network using an orthogonal basis of harmonic orbitals. This choice of orthogonal basis allows a precalculated library of matrix elements to be used in evaluating the Coulomb interactions, which speeds up the LCHO-CI calculation. The modi ed LCHO-CI approach is then used to study how the physical device geometry impacts the charge noise sensitivity of a double quantum dot system. We fi nd that, in general, geometries which increase the dot charging energy and decrease the gate lever arms improve the system's sensitivity to charge noise. We conclude this thesis by pivoting away from theoretical studies of silicon quantum dots and towards experimental studies of electron transport in dopant-free GaAs heterostructures. In modulation doped GaAs heterostructures, a doping layer is used to induce a two-dimensional electron gas (2DEG) at the heterojunction. Dopant-free GaAs lack the doping layer which makes fabrication more difficult as local electron reservoirs must be used to bring carriers and induce a 2DEG. The lack of the doping layer offers several advantages over modulation doped heterostructures, such as gate-ability of the 2DEG and ability to make ambipolar devices (both n- and p-type ohmic contacts). Realizing n- and p-type ohmic contacts requires etching a recess pit and depositing the ohmic material at an angle in order to preventing screening of the top gate when inducing a 2DEG or two-dimensional hole gas (2DHG). Magnetotransport experiments are used to characterize an induced 2DEG and 2DHG in a Hall bar fabricated on a 310 nm deep single heterojunction. The carrier mobility and density can be tuned using the top gate, and we achieve peak mobility values of 4.5E6 cm2/Vs and 0.65E6 cm2/Vs for the 2DEG and 2DHG respectively. We then move to a one-dimensional system and study electron transport through a quantum point contact. Conductance quantization is observed, and subband spectroscopy \nmeasurements indicate a 1D subband spacing of 4.5 meV. Finally, we study dynamically driven electron transport in a zero-dimensional system using a tunable-barrier quantum dot acting as a single electron pump. Single electron pumping is observed up to T = 5 K, and fi ts to the electron cascade model suggests pumping errors of 1.87 ppm when operated at a driving frequency of f = 500 MHz.
Coherent electron shuttling is a key requirement for realizing scalable silicon quantum computing architectures. However, in silicon qubits, the existence of nearly degenerate conduction-band valleys poses a significant challenge because non-adiabatic transitions to excited valley states cause spin dephasing via spin-valley mixing. In this paper, we propose a smooth velocity shuttling protocol to suppress these valley excitations. By mapping the time-domain design of the shuttling velocity profile onto the design problem of window functions in signal processing, we establish an analytical and intuitive design guideline that does not require computationally expensive numerical optimization. We demonstrate that the high-frequency sidelobes of the shuttling velocity spectrum can be effectively suppressed by applying a frequency-modulated gate voltage based on the Tukey window. Through statistical numerical simulations incorporating realistic spatial randomness of the valley landscape, we show that the proposed smooth velocity control significantly reduces the average spin infidelity in the moderate-to-low disorder regime (∣Δ0∣/σΔ≃O(1)|Δ_0|/σ_Δ\simeq \mathcal{O}(1)∣Δ0​∣/σΔ​≃O(1)). Our results underscore that this simple, control-level velocity shaping provides a robust pathway toward high-fidelity spin transport in large-scale silicon quantum processors.
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge noise, when converted to magnetic noise under a strong magnetic field gradient, often hinders stable qubit operation within a time frame comparable to the data acquisition time. Here, we demonstrate both open- and closed-loop suppression techniques for the transduced noise in silicon spin qubits, resulting in a more than two-fold (ten-fold) improvement of the inhomogeneous coherence time (Rabi oscillation quality) that leads to a single-qubit gate fidelity of over 99.6% even in the presence of a strong decoherence field gradient. Utilizing gate set tomography, we show that adaptive qubit control also reduces the non-Markovian noise in the system, which validates the stability of the gate fidelity. The technique can be used to learn multiple Hamiltonian parameters and is useful for the intermittent calibration of the circuit parameters with affordable experimental overhead, providing a useful subroutine during the repeated execution of general quantum circuits. Nuclear spin-free materials like 28Si show promising electron spin coherence times, but qubit operation still suffers from low-frequency noise. Here the authors address this by applying open- and closed-loop feedback control methods including real-time Hamiltonian parameter estimation and dynamic voltage pulsing.
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with ggg-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.