Chinese Physics B
Enhancing idle gate coherence through concatenated continuous driving in SiMOS quantum dot
Wei-Zhu Liao, Ao-Ran Li, Zhen-Zhen Kong, Gang Luo, Di Liu, G Z Wang, Gang Cao, Hai-Ou Li, Guo G
Abstract
Abstract Spin qubits based on semiconductor quantum dots have recently emerged as strong candidates for scalable quantum computation. However, due to substantial charge noise in the system, the coherence time remains insufficient to support large-scale quantum computations. Moreover, the fidelity of idle gates is severely degraded by the short dephasing time, which may compromise the overall quality of full quantum algorithms. Here, we demonstrate a circular-modulated concatenated continuous driving (CM-CCD) qubit realized in $^{28}$Si metal-oxide-semiconductor (SiMOS) devices to overcome this challenge. This scheme significantly enhances the qubit's resilience to noise and substantially improves its coherence: the dephasing time $T_{2}^{*}$ is extended from $717.7\ \text{ns}$ to $101.5\ \mu\text{s}$, and the Rabi coherence time $T_{2}^{\text{Rabi}}$ is improved from $7.8\ \mu\text{s}$ to $77.6\ \mu\text{s}$. We further propose a scheme to resolve the timing misalignment of CCD-based idle gates, improving the idle gate fidelity from 95.95% to 99.01%. Collectively, these results demonstrate that the CCD scheme offers a promising pathway to overcome the idle-gate challenge in large-scale quantum computations.