Coherence of a Driven Electron Spin Qubit Actively Decoupled from Quasistatic Noise
Takashi Nakajima, Akito Noiri, Kento Kawasaki, Jun Yoneda, Peter Stano, Shinichi Amaha, Tomohiro Otsuka, Kenta Takeda, Matthieu R. Delbecq, Giles Allison, Arne Ludwig, Andreas Dirk Wieck, Daniel Loss, Seigo Tarucha
The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise.During the past decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit.However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood.We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by highfrequency charge noise rather than the quasistatic noise inherent to any semiconductor device.We employ a feedback-control technique to actively suppress the latter, demonstrating a π-flip gate fidelity as high as 99.04 Æ 0.23% in a gallium arsenide quantum dot.We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the 1=f noise observed in isotopically purified silicon qubits.
The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise.During the past decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit.However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood.We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by highfrequency charge noise rather than the quasistatic noise inherent to any semiconductor device.We employ a feedback-control technique to actively suppress the latter, demonstrating a π-flip gate fidelity as high as 99.04 Æ 0.23% in a gallium arsenide quantum dot.We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the 1=f noise observed in isotopically purified silicon qubits.
Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the TRabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 ± 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.
In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as T2∗. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time (T1ρ), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a π/2 gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear spin-free materials, such as isotopically purified silicon, exhibit intrinsically promising coherence properties for electron spin qubits, the omnipresent charge noise, when converted to magnetic noise under a strong magnetic field gradient, often hinders stable qubit operation within a time frame comparable to the data acquisition time. Here, we demonstrate both open- and closed-loop suppression techniques for the transduced noise in silicon spin qubits, resulting in a more than two-fold (ten-fold) improvement of the inhomogeneous coherence time (Rabi oscillation quality) that leads to a single-qubit gate fidelity of over 99.6% even in the presence of a strong decoherence field gradient. Utilizing gate set tomography, we show that adaptive qubit control also reduces the non-Markovian noise in the system, which validates the stability of the gate fidelity. The technique can be used to learn multiple Hamiltonian parameters and is useful for the intermittent calibration of the circuit parameters with affordable experimental overhead, providing a useful subroutine during the repeated execution of general quantum circuits. Nuclear spin-free materials like 28Si show promising electron spin coherence times, but qubit operation still suffers from low-frequency noise. Here the authors address this by applying open- and closed-loop feedback control methods including real-time Hamiltonian parameter estimation and dynamic voltage pulsing.
Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms spatial disorder into time-dependent noise, its net impact on spin coherence remains an open question. Here we demonstrate systematic noise mitigation during spin shuttling in a linear 28Si/SiGe quantum dot device. First, by passively reducing magnetic field gradients, we minimize charge-noise coupling to the spin and double the spatially averaged dephasing time T2∗(xn) from 4.4 to 8.5μs. Next, we exploit motional narrowing by periodically shuttling the qubit, achieving a further enhancement in coherence time up to T2∗,sh=11.5μs. Finally, we incorporate dynamical decoupling techniques while periodically shuttling over distances exceeding 200nm, reaching T2H,sh=32μs. For the same setup, we demonstrate that dressed-state shuttling provides robust protection against low-frequency noise with a decay time TRsh=21μs, without the overhead of pulsed control and allowing protection during one-way spin transport. By preserving coherence over timescales exceeding typical gate and readout operations, the demonstrated strategies establish mobile spin qubits as a viable solution for scalable silicon quantum processors.
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at gigahertz (GHz) gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.