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arXiv:2409.09747 · Applied Physics Letters

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Ning Wang, Shaomin Wang, Run-Ze Zhang, Jihoon Kang, Wen-Long Lu, Hai-Ou Li, Gang Cao, Bao‐Chuan Wang, Guo‐Ping Guo

Published Nov 11, 2024• 4 citations
arXivHTMLPDF

Abstract

Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.

DOI
10.1063/5.0230605

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Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the TRabiT^{Rabi}TRabi from 7 to 11 μμμs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 ±\pm± 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{\mathrm{CNOT}}CNOT​ and CZ\sqrt{\mathrm{CZ}}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a CNOT gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{CNOT}CNOT​ and CZ\sqrt{CZ}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity CNOT and CZ gates in the presence of low-frequency noise.
Abstract Universal quantum computation will require qubit technology based on a scalable platform1, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations2, 3. Although various qubit systems have shown high fidelities at the one-qubit level4–10, the only solid-state qubits manufactured using standard lithographic techniques that have demonstrated two-qubit fidelities near the fault-tolerance threshold6 have been in superconductor systems. Silicon-based quantum dot qubits are also amenable to large-scale fabrication and can achieve high single-qubit gate fidelities (exceeding 99.9 per cent) using isotopically enriched silicon11, 12. Two-qubit gates have now been demonstrated in a number of systems13–15, but as yet an accurate assessment of their fidelities using Clifford-based randomized benchmarking, which uses sequences of randomly chosen gates to measure the error, has not been achieved. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80 to 89 per cent, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7 per cent and an average controlled-rotation fidelity of 98 per cent. These fidelities are found to be limited by the relatively long gate times used here compared with the decoherence times of the qubits. Silicon qubit designs employing fast gate operations with high Rabi frequencies16, 17, together with advanced pulsing techniques18, should therefore enable much higher fidelities in the near future.
Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-ZZZ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.
A key ingredient for fault-tolerant quantum computers are sufficiently accurate logic gates on single and multiple qubits in the presence of decohering noise. In this thesis, we theoretically develop and experimentally demonstrate such high-fidelity quantum gates for semiconductor-based quantum computing. Specifically, we consider a qubit encoded in the singlet and one triplet state of two electron spins in GaAs. While its potential for optical coupling makes GaAs an attractive material, highly auto-correlated magnetic field noise from fluctuating nuclear spins leads to considerably lower coherence times than for Si-based devices, where nuclear spins can be removed by isotopic purification. In addition to noise, the control methods used in earlier experiments are based on unrealistic approximations. For these reasons, fidelities well above 99 %, as required by current quantum error correction (QEC) schemes, have not been obtained before this thesis. To tackle these issues, we extend the filter function formalism to describe quantum gates and processes in the presence of experimentally relevant non-Markovian noise. Since this formalism can consider all relevant noise sources in a computationally efficient manner, it can be used to find optimal control pulses by numerical optimization, leading to predicted single-qubit gate fidelities of 99.9 %. Furthermore, we deal with the considerable control challenges associated with this qubit type by experimental calibration of the optimized control pulses. To this end, we extend our previous experimental gate set calibration (GSC) routine to remove systematic gate errors on an arbitrary number of qubits. We apply the numerically optimized single-qubit control pulses to our GaAs sample and experimentally calibrate them with GSC. This procedure yields an average gate fidelity of 99.50 ± 0.04 % and a low leakage rate of 0.13 ± 0.03 % out of the computational subspace, characterized by randomized benchmarking. We also optimize realistic two-qubit control pulses, considering current control hardware as well as interqubit Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we show that two-qubit gate fidelities of 99.90 % can be reached in GaAs, while 99.99 % can be achieved in Si. These results demonstrate that high-fidelity gates can be realized even in the presence of nuclear spins as in GaAs.