Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1902.02350 · Physical review. B./Physical review. B

Fast high-fidelity entangling gates for spin qubits in Si double quantum dots

F. A. Calderon-Vargas, George S. Barron, Xiu–Hao Deng, Anthony J. Sigillito, Edwin Barnes, Sophia E. Economou

Published Jul 9, 2019• 32 citations
arXivHTMLPDF

Abstract

Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to $\sqrt{\mathrm{CNOT}}$ and $\sqrt{\mathrm{CZ}}$ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.

DOI
10.1103/physrevb.100.035304

Related papers

Fast high-fidelity entangling gates in Si double quantum dots

F. A. Calderon-Vargas, George S. Barron, Xiu–Hao Deng +3 more

Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a CNOT gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to $\sqrt{CNOT}$ and $\sqrt{CZ}$ that are used to implement simple two-piece pulse sequences that produce high-fidelity CNOT and CZ gates in the presence of low-frequency noise.

Bulletin of the American Physical Society•Feb 6, 2019•3 citations

Geometric two-qubit gates in silicon-based double quantum dots

Yong-Yang Lu, Kejin Wei, Chengxian Zhang

Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-$Z$ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.

arXiv:2409.00601•Physical Review A•Apr 10, 2025•7 citations

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Ning Wang, Shaomin Wang, Run-Ze Zhang +6 more

Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.

arXiv:2409.09747•Applied Physics Letters•Nov 11, 2024•4 citations

High-fidelity and robust two-qubit gates for quantum-dot spin qubits in silicon

Chia-Hsien Huang, Chih Hwan Yang, Chien-Chang Chen +2 more

A two-qubit controlled-not (cnot) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity cnot gates robust against electrical noise with the experimentally measured $1/{f}^{1.01}$ noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our fine-tuned optimal cnot gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC.

arXiv:1806.02858•Physical Review A•Apr 4, 2019•19 citations

High-fidelity entangling gate for double-quantum-dot spin qubits

John M. Nichol, Lucas Orona, Shannon P. Harvey +4 more

Abstract Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10 9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.

arXiv:1608.04258•npj Quantum Information•Jan 19, 2017•220 citations

High-fidelity quantum gates in Si/SiGe double quantum dots

Maximilian Rimbach-Russ, D. M. Zajac, Anthony J. Sigillito +4 more

Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.

arXiv:1711.00754•Physical review. B./Physical review. B•Feb 15, 2018•115 citations
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate cnot, cphase, and cz gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a cnot gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{\mathrm{CNOT}}CNOT​ and CZ\sqrt{\mathrm{CZ}}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity cnot and cz gates in the presence of low-frequency noise.
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a CNOT gate in less than 27 ns and with a fidelity greater than 99.99%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to CNOT\sqrt{CNOT}CNOT​ and CZ\sqrt{CZ}CZ​ that are used to implement simple two-piece pulse sequences that produce high-fidelity CNOT and CZ gates in the presence of low-frequency noise.
Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-ZZZ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.
Electron spins in silicon quantum dots are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with an average fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.
A two-qubit controlled-not (cnot) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking the realistic system parameters and the experimental constraints on the control pulses into account, we construct experimentally realizable high-fidelity cnot gates robust against electrical noise with the experimentally measured 1/f1.011/{f}^{1.01}1/f1.01 noise spectrum and also against the uncertainty in the interdot tunnel coupling amplitude. Our fine-tuned optimal cnot gate has about two orders of magnitude improvement in gate infidelity over the ideal C-phase gate constructed without considering any noise effect. Furthermore, within the same control framework, high-fidelity and robust single-qubit gates can also be constructed, paving the way for large-scale FTQC.
Abstract Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10 9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.