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arXiv:2606.18522

Piezoelectric resonators in thin-film barium titanate from room temperature to millikelvin

Hao Tian, Shu-Yuan Chang, Nuha Akhtar, Kasra Sardashti, Mohammad Mirhosseini

physics.app-phquant-phSubmitted Jun 16, 2026• Announced Jun 18, 2026
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Abstract

Ferroelectric materials, with their strong nonlinearities, underpin key technologies across radio-frequency (RF) signal processing, optical communications, and emerging quantum systems. Barium titanate (BTO) is a notable example, combining strong piezoelectric and electro-optic responses. While bulk BTO has been studied for decades, the piezoelectric properties of its recently available thin films, and their behavior at the millikelvin temperatures relevant to quantum hardware, remain largely unexplored. Here, we fabricate and characterize surface acoustic wave (SAW) resonators on thin-film BTO. The measured devices exhibit high electromechanical coupling (k2eff 0.14 at 5.2 GHz) and operate up to 7.8 GHz. From these measurements, combined with finite-element modeling of the multi-domain microstructure, we extract an effective piezoelectric coefficient d33eff of 53 pC/N, comparable to bulk BTO. Exploiting the intrinsic ferroelectricity, we further demonstrate low-voltage switching with a fast (100 ns) response, attractive for reconfigurable RF front-ends and parametric amplifiers. Extending these measurements to millikelvin temperatures, we find that the piezoelectric response persists, with d33eff 19 pC/N, pointing to the potential of BTO for piezoelectric coupling in superconducting quantum circuits. These results position thin-film BTO as a promising piezoelectric platform for both classical and quantum information technologies.

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Ferroelectric materials, with their strong nonlinearities, underpin key technologies across radio-frequency (RF) signal processing, optical communications, and emerging quantum systems. Barium titanate (BTO) is a notable example, combining strong piezoelectric and electro-optic responses. While bulk BTO has been studied for decades, the piezoelectric properties of its recently available thin films, and their behavior at the millikelvin temperatures relevant to quantum hardware, remain largely unexplored. Here, we fabricate and characterize surface acoustic wave (SAW) resonators on thin-film BTO. The measured devices exhibit high electromechanical coupling (k2eff 0.14 at 5.2 GHz) and operate up to 7.8 GHz. From these measurements, combined with finite-element modeling of the multi-domain microstructure, we extract an effective piezoelectric coefficient d33eff of 53 pC/N, comparable to bulk BTO. Exploiting the intrinsic ferroelectricity, we further demonstrate low-voltage switching with a fast (100 ns) response, attractive for reconfigurable RF front-ends and parametric amplifiers. Extending these measurements to millikelvin temperatures, we find that the piezoelectric response persists, with d33eff 19 pC/N, pointing to the potential of BTO for piezoelectric coupling in superconducting quantum circuits. These results position thin-film BTO as a promising piezoelectric platform for both classical and quantum information technologies.
Quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate, and transduce stationary and flying quantum states. However, the limited lifetime of these hybrid quantum systems remains critical obstacles to extend their applications in quantum information processing. Here, we present potentials of thin film aluminum nitride to on-chip integrated phonons with superconducting qubits over previous bulk piezoelectric substrates. We have reported high-quality thin film GHz-SAW resonators with the highest internal quality factor Qi of 4.92×104 in the quantum regime. The internal losses of SAW resonators are systematically investigated by tuning the parameters of sample layout, power, and temperature. Our results manifest that SAWs on piezoelectric films are readily integrated with standard fabrication of Josephson junction quantum circuits and offer excellent acoustic platforms for high-coherence quantum acoustodynamics architectures.
Abstract We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots (QDs) on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III–V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factors Q ≈ 17 000 representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of ≈ 400 M H z resonators is achieved to temperatures T > 7 K and electrical radio frequency powers P r f > + 9 d B m . Heterogeneously integrated single QDs couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid QD—surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the QD. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits.
Efficient, low-noise, and high-bandwidth transduction between optical and microwave photons is key to long-range quantum communication between distant superconducting quantum processors. Recent demonstrations of microwave-optical transduction using the broadband direct electro-optic (Pockels) effect in optical thin films made of AlN or LiNbO 3 have shown promise. To improve efficiency and added noise, materials with larger Pockels coefficients, such as the soft ferroelectrics BaTiO 3 or SrTiO 3 , are needed. However, these materials require adapted designs and fabrication approaches due to their nonlinear and, in some cases, hysteretic electro-optic response. Here, we engineer an on-chip, triply resonant transducer comprising low-loss BaTiO 3 -on- SiO 2 waveguides monolithically integrated with a superconducting microwave resonator made of Nb. We demonstrate bidirectional microwave-optical transduction and reach total off-chip efficiencies of 1 × 10 − 6 using pulsed pumping. The device design permits poling of the ferroelectric material without introducing excess microwave loss, exploiting superconducting air bridges fabricated using only subtractive patterning steps. In addition, we investigate optically induced heating, revealing fast thermalization and quasiparticle resilience of the microwave resonator. Our transducer concept and fabrication process are applicable to other materials with a large bias-induced Pockels effect like SrTiO 3 and pave the way for efficient, low-power quantum interconnects.
Piezoelectric nanomechanical resonators operating at gigahertz frequencies are a promising platform for quantum information processing and precision sensing, but phonon lifetimes have been limited to the microsecond range, widely attributed to the higher intrinsic loss of piezoelectric materials. Here we show that this limitation is not fundamental. Using a fabrication process informed by recent studies of defect-mediated loss in lithium niobate, we combine chemical restoration of ion-milled surfaces with a shadow-mask metallization process to produce lithium niobate phononic crystal resonators with inferred internal phonon lifetimes of up to 21 milliseconds at 3.6 gigahertz, corresponding to quality factors exceeding 4×1084\times10^84×108 (f⋅Qi>1018f\cdot Q_i > 10^{18}f⋅Qi​>1018) at millikelvin temperatures. By systematically varying the electrode-to-resonator spacing, we demonstrate that the measured lifetime is set by external coupling between the device and the measurement circuit rather than material loss. This establishes that lithium niobate, once fabrication-induced surface damage is removed, achieves an intrinsic quality comparable to the best mechanical materials while remaining an intrinsically piezoelectric platform with strong electromechanical coupling.
Thin-film lithium niobate (LN) has become an enabling platform in the development of quantum integrated circuits, for applications including microwave-to-optical converters and electromechanical transducers. Incorporation of high-quality planar superconducting resonators will further elevate the performance of these devices. However, alongside the desired interactions originated from LN, its piezoelectric nature also introduces parasitic coupling between microwave and phononic modes, resulting in excessive dielectric loss. In this work, we investigate such coupling by studying niobium nitride resonators directly deposited on patterned LN thin films. By varying device configuration, we pinpoint that overlapping electric field with LN can inadvertently excite bulk acoustic modes within the substrate, inducing microwave loss independent of the acoustic dissipation rate. The experimental results are supported by simulation and theoretical modeling. Our approach can be applied to different piezoelectric systems and provide insights into the design of microwave components for quantum transduction devices.
Imaging GHz surface acoustic wave modes in electrostricted LaAlO3_33​/SrTiO3_33​ heterostructures
The LaAlO3_33​/SrTiO3_33​ (LAO/STO) interface hosts a gate-tunable superconducting two-dimensional electron gas (2DEG) which can be programmed to create quantum devices such as ballistic electron waveguides and quantum dots. To fully exploit this platform for quantum transport, a key requirement is the ability to shuttle single electrons, electron pairs, and other exotic states between spatially separated devices with precision. Surface acoustic waves (SAWs), which travel along the surface of a solid, offer a powerful route to achieve this through their moving electrical potential that captures and transfers electrons. %acoustoelectric coupling. In particular, SAWs in the GHz regime enable fast, controlled transport of individual quantum particles. Although this approach is well-explored in GaAs-based 2DEG, SAW generation in STO remains largely unexplored due to the lack of intrinsic piezoelectricity at room temperature. Here, we investigate room-temperature SAWs in LAO/STO and observe SAW modes up to 2.2 GHz with very low propagation loss of the order 10−310^{-3}10−3 dB per wavelength. To directly visualize these modes, we employ Atomic Acoustic Force Microscopy (AAFM), achieving sub-micron resolution imaging of the SAW wave forms, providing insight into the electrostriction-induced SAW generation mechanism. Our measurements indicate a shear horizontal-type mode, which provides the ability to couple to in-plane degrees of freedom for future acoustoelectric and quantum device applications. This work studies the fundamentals of SAW excitation and propagation on STO, a widely used and commercially available substrate, enabling straightforward coupling of SAWs to a broad range of materials that can be grown or transferred onto STO.