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arXiv:2603.02584

Ultra-low loss piezo-optomechanical low-confinement silicon nitride platform for visible wavelength quantum photonic circuits

Mayank Mishra, Gwangho Choi, Wenhua He, Gina M. Talcott, Katherine Kearney, Michael Gehl, Andrew Leenheer, Daniel Dominguez, Nils T. Otterstrom, Matt Eichenfield

physics.opticsquant-phSubmitted Mar 3, 2026• Announced Mar 4, 2026
v1 · Mar 3, 2026v2 · Mar 4, 2026v3 · Mar 8, 2026v4 · Aug 27, 2026
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Abstract

The stringent demands of photonic quantum computing protocols motivate photonic integrated circuit (PIC) platforms with passive optical properties such as extremely low losses and correspondingly large circuit depths, as well as active optical properties such as high reconfiguration rates, low power dissipation, and minimal crosstalk. At the same time, many quantum photonic resource state generators, such as single-photon sources and quantum memories, require operation in the visible wavelength range. These requirements make the passive optical properties of CMOS-fabricated, ultralow-loss, low-confinement silicon nitride waveguides especially attractive. However, the conventional active properties of these systems based on thermo-optic modulation are plagued by high levels of crosstalk, slow modulation rates, and high power dissipation. Although there have been recent demonstrations of CMOS-fabricated, visible wavelength, piezo-optomechanical PICs that solve the above challenges associated with implementing active functionality, these have made use of high-confinement waveguides with currently demonstrated losses of order $0.3$-$1~\mathrm{dB/cm}$, precluding circuit depths required for scalable quantum algorithms. Here, we demonstrate that combining piezo-optomechanical actuation with a low-confinement, ultra-low loss silicon nitride platform addresses the scalability challenge while enabling high-performance active functionality at visible wavelengths. This platform achieves a propagation loss $0.026~\mathrm{dB/cm}$ at $780~\mathrm{nm}$, modulation bandwidths in the MHz range, and a phase shifter voltage-length product ($V_πL$) of approximately $2.8~\mathrm{\mathrm{V}\cdot\mathrm{m}}$ and negligible hysteresis. We further demonstrate reconfigurable Mach-Zehnder interferometers based on spiral phase shifters with 0.63 dB loss per phase shifter.

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Fast and ultra-low loss single-photon switching and routing are essential for photonic quantum computation and communication. To address this need in a scalable fashion, all-optical switches that can be fabricated in an ultra-low loss and mature Si3_{3}3​N4_{4}4​photonic integrated circuit (PIC) foundry platform are designed and optimized for sub-ns switching times suitable for deterministic quantum-dot single-photon sources. The working principle relies on cross-phase modulation (XPM) of the single photons with a 1550-nm pump pulse and is enhanced by a ring resonator. Two different designs of the primary switch element are theoretically studied, namely a ring resonator intensity switch (RRIS) based on resonance shifting due to XPM and a ring resonator phase switch (RRPS) acting as an all-optical phase shifter in a Mach–Zehnder interferometer. As a novel approach to speed up the switching, chirped pre-emphasis and wipe sections for the pump pulses are utilized. A design tool is established from analytical expressions and serves as starting point for further optimization using a dedicated travelling-wave model (TWM). The TWM demonstrates the feasibility of both designs to be driven by either the proposed pre-emphasis pulse shape or a train of chirped Gaussian pulses. While the RRPS turns out to require less pump energy, its operation is more sensitive to pump-power fluctuations. Insertion losses below 0.1 dB and a power consumption below 5 nJ at 1 GHz switching rates for both configurations prove the potential of this concept for scalable quantum photonic applications.
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Programmable waveguide circuits are crucial building blocks for integrated spectrometric applications and quantum photonic information processing. Amongst the dielectric material platforms in integrated photonics, silicon nitride stands out with highly attractive properties such as a large bandgap energy and a moderately high index contrast. This allows low propagation losses in a wide spectral range while simultaneously allowing a dense packing of components. The aforementioned properties, together with the inherent phase stability and phase programmability achievable in silicon nitride, enable the creation of complex photonic circuits. In this thesis we describe and demonstrate densely integrated programmable photonic circuits based on silicon nitride waveguides for wavelength metrology and quantum information processing. We concentrate on reconfigurable photonic integrated circuits based on silicon nitride waveguides with low-loss propagation, to explore interference in the spectral and temporal domain for advanced applications. We investigated two types of integrated interferometric devices featuring low loss in combination with programmability for classical and quantum photonic processing. The first is simple tunable microring resonator circuits in combination with neural network data processing for the analysis of classical light in the spectral domain as wavelength meter. The second is a complex tunable network of waveguide interferometers for controlling quantum correlations (coincidences) between single photons. Exploiting the long-term interferometric stability, low propagation loss and tight optical confinement of integrated silicon nitride waveguides, we have shown complex reconfigurable optical circuits both for classical and quantum photonic processing. For future development of integrated programmable photonic processors, various challenges need to be addressed such as compact and low-power phase shifters, a further increase of the component density and lower the propagation losses.
Scaling quantum control for atoms, ions, and solid-state emitters requires gigahertz-frequency spectral control of high-power visible light in a volume-manufacturable platform. Silicon nitride photonics provides high power handling and CMOS-foundry compatibility but has no intrinsic mechanism for high-speed modulation. Integration with piezoelectric materials enables acousto-optic phase modulation, and mechanical resonant enhancement has made it efficient at gigahertz frequencies. However, a single resonance restricts the modulation waveform to a single tone, imposing Bessel-function sideband amplitudes and limiting frequency-shifting efficiency to 33.9%. Here we engineer a silicon nitride acousto-optic microstructure to support harmonically spaced resonances at 1.14 GHz and 2.28 GHz, each strongly optomechanically coupled to a 730 nm guided optical mode, so that tailored non-sinusoidal modulation waveforms can be resonantly synthesized. By piezoelectrically controlling the two mechanical amplitudes and their relative phase, we demonstrate 50% conversion to one sideband (1.5x the single-tone theoretical maximum), a flat seven-line comb, and a frequency shift with 60 dB carrier and 53 dB image suppression - to our knowledge the highest reported for an integrated modulator. The devices are fabricated in a 200 mm CMOS foundry, and we measure 91.7% yield without post-fabrication tuning across 36 devices from three wafers. We also show how the technique can be straightforwardly scaled to three or more harmonics. This result overcomes the trade-off between resonant enhancement and spectral programmability, with important consequences including improved single-qubit gate efficiency for hyperfine qubits.
Photonic integrated circuits (PICs) have enabled novel functionality in quantum optics, quantum information processing and quantum communication. PICs based on Silicon Nitride (Si3N4) provide low-loss passive components and are compatible with efficient superconducting nanowire single-photon detectors (SNSPDs). For realizing functional quantum photonic systems, the integration with active phase-shifters is needed which is challenging at the cryogenic temperatures needed for operating SNSPDs. Here we demonstrate a cryo-compatible phase shifter using a low-voltage opto-mechanical modulator and show joint operation with SNSPDs at 1.3 K. We achieve a half-wave voltage of 4.6 V, single-photon detection with 88% on-chip detection efficiency (OCDE) and a low timing jitter of 12.2 ps. Our approach allows for operating reconfigurable quantum photonic circuits with low dissipation in a cryogenic setting.