Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si 3 N 4 platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.
Atomic, molecular and optical (AMO) visible light systems are the heart of precision applications including quantum, atomic clocks and precision metrology. As these systems scale in terms of number of lasers, wavelengths, and optical components, their reliability, space occupied, and power consumption will push the limits of using traditional laboratory-scale lasers and optics. Visible light photonic integration is critical to advancing AMO based sciences and applications, yet key performance aspects remain to be addressed, most notably waveguide losses and laser phase noise and stability. Additionally, a visible light integrated solution needs to be wafer-scale CMOS compatible and capable of supporting a wide array of photonic components. While the regime of ultra-low loss has been achieved at telecommunication wavelengths, progress at visible wavelengths has been limited. Here, we report the lowest waveguide losses and highest resonator Qs to date in the visible range, to the best of our knowledge. We report waveguide losses at wavelengths associated with strontium transitions in the 461 nm to 802 nm wavelength range, of 0.01 dB/cm to 0.09 dB/cm and associated intrinsic resonator Q of 60 Million to 9.5 Million, a decrease in loss by factors of 6x to 2x and increase in Q by factors of 10x to 1.5x over this visible wavelength range. Additionally, we measure an absorption limited loss and Q of 0.17 dB/m and 340 million at 674 nm. This level of performance is achieved in a wafer-scale foundry compatible Si 3 N 4 platform with a 20 nm thick core and TEOS-PECVD deposited upper cladding oxide, and enables waveguides for different wavelengths to be fabricated on the same wafer with mask-only changes per wavelength. These results represent a significant step forward in waveguide platforms that operate in the visible, opening up a wide range of integrated applications that utilize atoms, ions and molecules including sensing, navigation, metrology and clocks.
We demonstrate an integrated photonic platform for control of complex atomic systems. The platform includes multiple waveguide layers and a suite of passive photonic circuit components supporting a wavelength range from 370-1100 nm. In particular, we demonstrate a novel dual-layer vertical grating coupler used for efficiently directing visible light to precise positions above the chip surface. These circuits are compatible with traditional CMOS fabrication techniques and are well suited for improving the scalability of quantum information processing systems based on trapped-ion technology. A chip-scale waveguide platform at visible wavelengths could also prove useful in a variety of bio-photonic and sensing applications requiring precise light delivery or readout in a compact footprint.
Realizing photonic quantum computing at scale requires integrated circuits that combine ultra-low loss with fast, low-power, low-hysteresis, and low-crosstalk reconfiguration. These requirements are particularly challenging at visible wavelengths, where many quantum resource-state generators, including single-photon sources and quantum memories, naturally operate. Low-confinement silicon nitride waveguides offer the requisite loss performance, but conventional thermo-optic modulators dissipate significant static power, driving thermal crosstalk and precluding cryogenic operation. Visible-wavelength piezo-optomechanical circuits avoid these drawbacks, but existing demonstrations rely either on high-confinement waveguides with propagation losses of 35-100 dB/m, or on low-confinement platforms using foundry-incompatible PZT. Here we combine piezo-optomechanical actuation with a CMOS-foundry-fabricated, low-confinement silicon nitride platform, achieving 2.6 dB/m propagation loss at 780 nm, megahertz-scale modulation bandwidth, a half-wave voltage-length product of 2.8 Vm, and negligible hysteresis. We demonstrate reconfigurable Mach-Zehnder interferometers with 0.63 dB loss per spiral phase shifter, enabling deep, actively reconfigurable visible-wavelength quantum photonic circuits.
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high performance have been challenging to realize. Here we demonstrate a wafer-scale III-V-on-SiN quantum photonic platform that directly integrates III-V layers to foundry-fabricated SiN circuits. The SiN layer provides 200-300 nm thick waveguides with <1 dB/m loss and a mature passive photonics ecosystem, while III-V materials provide large χ(2) and χ(3) nonlinearities for parametric gain, frequency conversion and quantum light generation. Adiabatic interlayer couplers yield <25 mdB loss to InGaP waveguides and resonators with intrinsic quality factors exceeding 106, enabling 15× brighter entanglement sources and efficient nonlinear conversion on SiN. Integrated components--including low-loss beam splitters, waveguide crossers, and tunable interferometers--are complemented by III-V lasers and InP photodetectors with amplifiers achieving up to 99−12+1% quantum efficiency and 3 GHz bandwidth. This architecture unites ultra-efficient sources, nonlinear elements and detectors on a wafer-scale, low-loss platform, establishing a path toward large-scale, low-noise quantum photonic systems.
Integrating precise, stable, ultra-low noise visible light lasers into atomic systems is critical for advancing quantum information sciences and improving scalability and portability. Trapped ions are a leading approach for high-fidelity quantum computing, high-accuracy optical clocks, and precision quantum sensors. However, current ion-based systems rely on bulky, lab-scale precision lasers and optical stabilization cavities for optical clock and qubit operations, constraining the size, weight, scalability, and portability of atomic systems. Chip-scale integration of ultra-low noise lasers and reference cavities operating directly at optical clock transitions and capable of qubit and clock operations will represent a major transformation in atom and trapped ion-based quantum technologies. However, this goal has remained elusive. Here we report the first demonstration of chip-scale optical clock and qubit operations on a trapped ion using a photonic integrated direct-drive visible wavelength Brillouin laser stabilized to an integrated 3-meter coil-resonator reference cavity and the optical clock transition of a 88Sr+ ion trapped on a surface electrode chip. We also demonstrate for the first time, to the best of our knowledge, trapped-ion spectroscopy and qubit operations such as Rabi oscillations and high fidelity (99%) qubit state preparation and measurement (SPAM) using direct drive integrated photonic technologies without bulk optic stabilization cavities or second harmonic generation. Our chip-scale stabilized Brillouin laser exhibits a 6 kHz linewidth with the 0.4 Hz quadrupole transition of 88Sr+ and a self-consistent coherence time of 60 μs via Ramsey interferometry on the trapped ion qubit. Furthermore, we demonstrate the stability of the locked Brillouin laser to 5×10−13/τ at 1 second using dual optical clocks.
Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.
The field of photonic integrated circuits (PIC) has flourished in the past two decades, fueling numerous cutting-edge applications across sensing, networking, data interconnect, and quantum information processing. As a guiding material for PIC, Si3N4 has seen extensive use for its ultra-low loss, broad transparency, and diversity in implementation across both thin and thick films. Although the standard, traditional silicon dioxide (SiO2) on silicon (Si) substrates that underpin the majority of Si3N4 photonics face drawbacks in the form of long-wavelength transparency limited by SiO2, high-stress deposition for anomalous dispersion thick-film Si3N4, and leakage loss to the Si layer for low-confinement thin-film Si3N4. Featuring increased long-wavelength transparency into the mid-infrared, low-stress deposition of Si3N4, and a low index, this work investigates sapphire substrates as alternate hosts for Si3N4 photonics with greater spectral coverage and reduced fabrication complexity. This work presents a robust method of fabricating ultra-low loss photonic integrated circuits on a 500-nm-thick Si3N4-on-sapphire platform, exhibiting record-low losses below 0.1dB/cm. Implemented using this process are high-Q microrings with intrinsic quality factors in excess of 4.5×106 and coupled-ring photonic molecules to support nonlinear gain. Leveraging the achievable low loss and high-Q, this work further reports the first demonstration of Kerr-comb and soliton generation on the Si3N4-on-sapphire platform. These advances in loss, quality factor, and soliton generation on this versatile, broad-transparency platform pave the way for future work in spectroscopy and quantum-enhanced sensing across previously prohibited spectral regions for Si3N4 photonics with reduced fabrication complexity.