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arXiv:2512.14586 · Advanced Quantum Technologies

Microwave control of photonic spin Hall effect in atomic system

Muhammad Waseem

physics.opticsphysics.atom-phquant-phSubmitted Dec 16, 2025• Announced Dec 17, 2025• 0 citations
v1 · Dec 16, 2025v2 · Sep 7, 2026
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Abstract

The photonic Spin Hall Effect (SHE) causes a polarization-dependent transverse shift of light at an interface. There is a significant research interest in controlling and enhancing the photonic SHE. In this paper, we theoretically investigate the microwave field control of the photonic SHE in a closed-loop $Λ$-type atomic system. We demonstrate that both the magnitude and angular position of the photonic SHE can be controlled by varying the relative phase $φ$ between the driving optical fields and the strength of the microwave coupling $Ω_μ$. At zero probe field detuning ($Δ_p = 0$) and $φ=0,π$, the photonic SHE magnitude reaches to upper limit equal to the half of the incident beam waist, and remains largely unaffected by the microwave strength $Ω_μ$, but its angular position shifts linearly with increasing $Ω_μ$. At intermediate phases, especially at $φ= π/2$, the magnitude of the photonic SHE exponentially decreases with the increase of $Ω_μ$. Interestingly, we observed microwave-controlled switching of photonic SHE by tuning the relative phase $φ$ at an optimized value of $Ω_μ$ and $Ω_{c}$. In contrast, at $Δ_p = \pm Ω_c$, a maximum photonic SHE equal to half of the incident beam waist occurs at $φ\leq π$ and $Ω_μ \geq Ω_p$, where both real and imaginary parts of the susceptibility vanish, yielding a unit refractive index. Our results may have potential applications in microwave quantum sensing and quantum optical switches based on the photonic SHE.

Journal reference
Advanced Quantum Technologies, Volume 09, page e70432, 6 Agust 2026
DOI
10.1002/qute.70432
Comments
8 pages, 6 figures

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Modern Physics Letters B•Aug 7, 2026•1 citation
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This paper theoretically investigates the manipulation of the photonic spin Hall effect (photonic SHE) using a four-level closed coherent control coupling scheme in a cavity. The atomic system is configured to function as a combined Tripod and Lambda (CTL), Lambda Λ, and N-level model by properly adjusting the control field strengths and their relative phases. The system demonstrates multiple transparency windows in the CTL configuration, allowing the tunable photonic SHE to be used over a wider range of probe field detuning. At probe field resonance under the condition of electromagnetic induced transparency (EIT), the Λ-type system exhibits photonic SHE similar to the CTL system, showing a maximum upper limit of photonic SHE equal to half of the incident beam waist. This upper limit arises due to zero absorption and dispersion. Control field strengths and atomic density do not influence photonic SHE at resonance for both atomic configurations. Our findings reveal that atomic density and strength of control fields significantly influence photonic SHE in the N-type model at resonance, offering additional control parameters for tuning photonic SHE. Finally, the results are equally valid and applicable to conventional Λ-type and N-type atomic systems, making the findings broadly relevant in cavity atomic systems. The results of angular photonic SHE are also discussed.
In the photonic spin Hall effect (SHE), also known as the transverse shift, incident light photons with opposite spins are spatially separated in the transverse direction due to the spin-orbit interaction of light. Here, we propose a gain-assisted model to control the SHE in the reflected probe light. In this model, a probe light is incident on a cavity containing a three-level dilute gaseous atomic medium, where the interaction between the atom and the control field follows two-photon Raman transitions. We show that the direction of photonic spin accumulations can be switched between positive and negative values across the Brewster angle in both the anomalous and normal dispersion regimes. For the same magnitude of control fields, the peak value of the photonic SHE is higher in the anomalous dispersion region compared to the normal dispersion regime. Additionally, the angular range around the Brewster angle is wider in the normal dispersion regime than in the anomalous dispersion region. Furthermore, the peak value of the photonic SHE and the angular range can be controlled by changing the Rabi frequencies of the control fields and the probe field detuning. The measurement of photonic SHE based on gain assistance may enable spin-related applications such as optical sensing.
This paper theoretically investigates the coherent manipulation of the photonic spin hall shift in a four-level dielectric medium. The light beam interacts with cavity having four-level dielectric medium under the Doppler broadening effect. The Doppler broadening effect influences the spin hall shift in atomic media, refers to the enhancement of spin-dependent transverse shifts of light due to the thermal motion of atoms, which broadens the atomic resonance response. The photonic spin hall shift is modified to exhibit either positive or negative values, depending on the applied driving fields. The maximum spin hall shift lies in − 20 λ ≤ S p L , R ≤ 20 λ with an angle of incidence ( θ i = 0.6 radian). The minimum spin hall shift lies in the range ± 9.410 λ ≤ S p L , R ≤ ± 9.435 λ versus control field detuning ( δ 1 = 0 Γ and δ 1 = 1 Γ ). The results are especially valuable in fields like sensing technology, quantum computing and optical communication.
This study reports the manipulation of photonic spin hall shift at the graphene medium that lies between two mirrors. The incoming probe light engages with a cavity filled with four levels graphene medium. The spin hall shift of the photons is tuned to positive or negative values, depending on the properties of the driving fields. The maximum spin hall shift which lies in − 50 λ ≤ S h p L , R ≤ 50 λ is a function of incidence angle and independent of control field Rabi frequency. The minimum spin hall shift lies in the range ± 17.79 λ ≤ S h p L , R ≤ ± 17.83 λ against the control field Rabi frequency ( | R 1 | = 0 G and 20 G). These findings have significant applications in areas such as sensing technology, quantum computing and optical communication.
This study explores the coherent control of the photonic spin hall shift through a configuration involving a four-levels dielectric medium. The probe beam engages with a cavity containing a four-level dielectric medium. By adjusting the parameters of the driving fields, the photonic spin shift can be controlled to exhibit either positive or negative values. The maximum values of the spin hall shift is in the range of [Formula: see text] with the incidence angle ([Formula: see text]= 1.2 radian and 3 radian ) and the minimum values is reported as [Formula: see text] against the probe field detuning ([Formula: see text] and [Formula: see text]). The results hold significant potential for use in fields like sensing devices, spin-based electronics, magnetic storage and quantum information processing.
The vertical and horizontal photonic spin Hall shift (PSHS) of left and right-handed polarized beams is controlled and modified using radio-frequency (RF)-driven atomic configuration. The effects of probe/control field detuning, radio-frequency, and decay rate are observed on ratios [Formula: see text], [Formula: see text] and corresponding PSHS in a RF-driven medium. The manipulation of [Formula: see text] and [Formula: see text] ratios significantly enhanced the PSHS of left- and right-handed polarized beams. The maximum value for reflection ratios and PSHS is reported against incident angle. The ratios [Formula: see text], and [Formula: see text] have a maximum range of [Formula: see text] and [Formula: see text]. The highest horizontal PSHS of left and right beams is observed in the range [Formula: see text]. Similarly, the highest vertical PSHS of left and right beams is observed in the range [Formula: see text], and [Formula: see text] against radio frequency. The obtained results may have significant applications in sensors, plasmonics, and semiconductor technology.