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arXiv:2512.14586 · Advanced Quantum Technologies

Microwave Controlled Photonic Spin Hall Effect in Atomic System and Microwave Electrometry

Muhammad Waseem

physics.opticsphysics.atom-phquant-phSubmitted Dec 16, 2025• Announced Dec 17, 2025• 0 citations• Revised Sep 7, 2026 (v2)
v1 · Dec 16, 2025v2 · Sep 7, 2026
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Abstract

The photonic Spin Hall Effect (SHE) causes a polarization dependent transverse shift of light at an interface. In this paper, we theoretically investigate the microwave controlled photonic SHE and microwave electrometry in a closed-loop $Λ$-type atomic system. At zero probe detuning ($Δ_p = 0$) and relative phase $φ=0,π$, the photonic SHE magnitude remains at the intrinsic finite beam saturation limit $w_0/2$, whereas the microwave field shifts its angular position linearly with opposite slopes (signs) for the two phases, enabling differential microwave electric field sensing. At $φ=π/2$, the photonic SHE magnitude decays exponentially with $Ω_μ$, providing weak microwave electric field sensing. In contrast, at $Δ_p = \pm Ω_c$ (control field coupling), the photonic SHE reaches a maximum of half the incident beam waist when $Ω_μ \geq Ω_p$ and the phase $φ$ is optimized. Interestingly, we observed microwave controlled switching of photonic SHE by tuning the relative phase $φ$ at an optimized value of $Ω_μ$ and $Ω_{c}$. Our results may have potential applications in microwave quantum sensing and quantum optical switches based on the photonic SHE.

Journal reference
Advanced Quantum Technologies, Volume 09, page e70432, 6 Agust 2026
DOI
10.1002/qute.70432
Comments
12 pages, 10 figures

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This study reports the manipulation of photonic spin hall shift at the graphene medium that lies between two mirrors. The incoming probe light engages with a cavity filled with four levels graphene medium. The spin hall shift of the photons is tuned to positive or negative values, depending on the properties of the driving fields. The maximum spin hall shift which lies in − 50 λ ≤ S h p L , R ≤ 50 λ is a function of incidence angle and independent of control field Rabi frequency. The minimum spin hall shift lies in the range ± 17.79 λ ≤ S h p L , R ≤ ± 17.83 λ against the control field Rabi frequency ( | R 1 | = 0 G and 20 G). These findings have significant applications in areas such as sensing technology, quantum computing and optical communication.
This study explores the coherent control of the photonic spin hall shift through a configuration involving a four-levels dielectric medium. The probe beam engages with a cavity containing a four-level dielectric medium. By adjusting the parameters of the driving fields, the photonic spin shift can be controlled to exhibit either positive or negative values. The maximum values of the spin hall shift is in the range of [Formula: see text] with the incidence angle ([Formula: see text]= 1.2 radian and 3 radian ) and the minimum values is reported as [Formula: see text] against the probe field detuning ([Formula: see text] and [Formula: see text]). The results hold significant potential for use in fields like sensing devices, spin-based electronics, magnetic storage and quantum information processing.
The vertical and horizontal photonic spin Hall shift (PSHS) of left and right-handed polarized beams is controlled and modified using radio-frequency (RF)-driven atomic configuration. The effects of probe/control field detuning, radio-frequency, and decay rate are observed on ratios [Formula: see text], [Formula: see text] and corresponding PSHS in a RF-driven medium. The manipulation of [Formula: see text] and [Formula: see text] ratios significantly enhanced the PSHS of left- and right-handed polarized beams. The maximum value for reflection ratios and PSHS is reported against incident angle. The ratios [Formula: see text], and [Formula: see text] have a maximum range of [Formula: see text] and [Formula: see text]. The highest horizontal PSHS of left and right beams is observed in the range [Formula: see text]. Similarly, the highest vertical PSHS of left and right beams is observed in the range [Formula: see text], and [Formula: see text] against radio frequency. The obtained results may have significant applications in sensors, plasmonics, and semiconductor technology.