The presence of non-equilibrium quasiparticles in superconducting resonators and qubits operating at millikelvin temperature has been known for decades. One metric for the number of quasiparticles affecting qubits is the rate of singleelectron change in charge on the qubit island (i.e. the charge parity rate). Here, we have utilized a Ramsey-like pulse sequence to monitor changes in the parity states of five transmon qubits. The five qubits have shunting capacitors with two different geometries and fabricated from both Al and Ta. The charge parity rate differs by a factor of two for the two transmon designs studied here but does not depend on the material of the shunting capacitor. The underlying mechanism of the source of parity switching is further investigated in one of the qubit devices by increasing the quasiparticle trapping rate using induced vortices in the electrodes of the device. The charge parity rate exhibited a weak dependence on the quasiparticle trapping rate, indicating that the main source of charge parity events is from the production of quasiparticles across the Josephson junction. To estimate this source of quasiparticle production, we simulate and estimate pair-breaking photon absorption rates for our two qubit geometries and find a similar factor of two in the absorption rate for a background blackbody radiation temperature of T ∗ ∼ 350 mK.
The presence of non-equilibrium quasiparticles in superconducting resonators and qubits operating at millikelvin temperature has been known for decades. One metric for the number of quasiparticles affecting qubits is the rate of singleelectron change in charge on the qubit island (i.e. the charge parity rate). Here, we have utilized a Ramsey-like pulse sequence to monitor changes in the parity states of five transmon qubits. The five qubits have shunting capacitors with two different geometries and fabricated from both Al and Ta. The charge parity rate differs by a factor of two for the two transmon designs studied here but does not depend on the material of the shunting capacitor. The underlying mechanism of the source of parity switching is further investigated in one of the qubit devices by increasing the quasiparticle trapping rate using induced vortices in the electrodes of the device. The charge parity rate exhibited a weak dependence on the quasiparticle trapping rate, indicating that the main source of charge parity events is from the production of quasiparticles across the Josephson junction. To estimate this source of quasiparticle production, we simulate and estimate pair-breaking photon absorption rates for our two qubit geometries and find a similar factor of two in the absorption rate for a background blackbody radiation temperature of T ∗ ∼ 350 mK.
Micro-fabricated superconducting circuits have emerged as a leading candidate for quantum computers. However, typical error rates of 10-3 for quantum gates remain a challenge for performing error correction and need to be further decreased for achieving practical quantum computation. Improving qubit coherence times for superconducting qubits is a continuous endeavor in order to decrease error rates. As part of this effort, a topic addressed in this dissertation is the study of the generation mechanism and dynamics of non-equilibrium quasiparticles (QPs), which are electron-like excitations of a superconductor. This source of decoherence was studied by measuring the rate of single-electron changes in the parity state of multiple charge-sensitive transmon qubits under different conditions. The presence of non-equilibrium QPs in superconducting resonators and qubits operating at millikelvin temperature has been known for decades. Understanding the sources and dynamics of these QPs is crucial to evaluate and improve the performance of the devices. Specifically, for superconducting qubits, a single QP tunneling across the Josephson junction changes the total charge parity from even to odd or vice versa, and can induce energy relaxation and dephasing, limiting the coherence of the device. To study the dynamics of non-equilibrium QPs, I utilized a Ramsey-like pulse sequence to measure the rate of single-electron parity changes in transmon qubits, which had a weak charge dispersion, with different shunting capacitor geometries and materials. I started out by measuring a charge parity rate of ~ 33 s-1 for a grounded "x-mon" qubit and ~ 17 s-1 for a galvanically isolated "two-pads" qubit with our standard setup. These rates decreased to ~ 5 s-1 and ~ 2 s-1 for the x-mon and two-pads respectively when IR-filters and extra layers of shielding were installed. From my measurements, I found that the charge parity rates are sensitive to the geometry of the shunting capacitor, weakly depend on the amount of shielding surrounding the device, and independent of using Al or Ta for the superconducting shunting capacitor. To distinguish between two possible mechanisms for the parity switching, I measured the parity rates after cooling one of the qubit devices in an external magnetic field to induce vortices in the superconducting electrodes. After increasing the magnetic field above 23 μT, I measured a faster QP trapping rate and a much smaller T1, suggesting that at least one vortex was added to the superconducting electrode near the Josephson junction. On the other hand, the measured charge parity rates exhibited no clear dependence on the background QP trapping rates. These data suggest that a large portion of parity switching events occurs from QPs being produced at the Josephson junction, where pair-breaking radiation is rectified into QPs by the junction, as opposed to tunneling of QPs residing in the electrodes. To understand the difference in the measured parity rates, I simulated the absorption efficiency of pair-breaking radiation for my two designs and observed a similar difference in absorption rates when a single-mode blackbody radiation with an effective temperature T* ~ 300 mK was assumed to be illuminating the devices. This large T*, which is significantly higher than the device's nominal temperature of 20 mK, is consistent with values reported in the literature. However, its physical origin remains not fully understood. For the other part of my dissertation, I developed a new simplified process for making superconducting air bridges. Air bridges are used to suppress unwanted extraneous high frequency chip modes parasitic to superconducting quantum circuits that can couple to qubits and cause decoherence. Traditional ways of making air bridges utilize thermal reflow to create arched photoresist scaffolds that are limited in heights. This results in insufficient mechanical strength of the bridges which tend to collapse when spanning to larger lengths. My simplified fabrication method that utilizes two-photon lithography, a technique that enables creation of three-dimensional micron-scale structures, relaxes this limitation and is capable of making mechanically stable bridges with lengths up to 100 μm. The resulting Al air bridges, having a superconducting transition temperature of Tc = 1.08 mK and a dc residual resistivity ratio of 3.85, were confirmed to form a good electrical contact with the base metal layers and exhibit a small measurable amount of rf loss when placed over coplanar waveguide resonators, on par with other air bridge fabrication methods.
Abstract Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the non-equilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
Single-charge tunneling is a decoherence mechanism affecting superconducting qubits, yet the origin of excess quasiparticle excitations (QPs) responsible for this tunneling in superconducting devices is not fully understood.We measure the flux dependence of charge-parity (or, simply, "parity") switching in an offsetcharge-sensitive transmon qubit to identify the contributions of photon-assisted parity switching and QP generation to the overall parity-switching rate.The parity-switching rate exhibits a qubit-state-dependent peak in the flux dependence, indicating a cold distribution of excess QPs that are predominantly trapped in the low-gap film of the device.Moreover, we find that the photon-assisted process contributes significantly to both parity switching and the generation of excess QPs by fitting to a model that self-consistently incorporates photon-assisted parity switching as well as interfilm QP dynamics.
We have engineered the band gap profile of transmon qubits by combining oxygen-doped Al for tunnel junction electrodes and clean Al as quasiparticle traps to investigate energy relaxation due to quasiparticle tunneling. The relaxation time T1 of the qubits is shown to be insensitive to this band gap engineering. Operating at relatively low-E(J)/E(C) makes the transmon transition frequency distinctly dependent on the charge parity, allowing us to detect the quasiparticles tunneling across the qubit junction. Quasiparticle kinetics have been studied by monitoring the frequency switching due to even-odd parity change in real time. It shows the switching time is faster than 10 μs, indicating quasiparticle-induced relaxation has to be reduced to achieve T1 much longer than 100 μs.
Quasiparticles are a prominent decoherence source in superconducting qubits, but their effects are notoriously difficult to isolate in fluxonium. Unlike the transmon, fluxonium is insensitive to offset charge, precluding charge-parity detection of quasiparticle tunneling. We address this challenge by measuring the excitation and de-excitation rates in a fluxonium qubit under controlled on-chip quasiparticle injection and isolating the quasiparticle-induced contribution by subtracting the background transition rates. We show that to accurately model the external magnetic flux dependence of the quasiparticle-induced transition rates, it is necessary to account for the superconducting gap asymmetry across the Josephson junctions. A comparison between theory and experiment constrains the relative quasiparticle densities in the small junction and the junction array and helps explain previously reported discrepancies between the bounds on the quasiparticle densities inferred for these two circuit elements.
Transmons are widely adopted in quantum computing architectures for their engineered insensitivity to charge noise and correspondingly long relaxation times. Despite this advantage, transmons often exhibit large fluctuations in dephasing times across different devices and also within qubits on the same device. Existing transmon qubits are assumed to be insensitive to charge noise. However, very little recent attention has been paid to the dependence of dephasing on the local charge environment. In this study, we see fluctuations in the dephasing time, Tϕ, which correlate to charge offset. While charge offset fluctuations are slow, parity switches are fast processes tied to the charge offset and can affect Tϕ in Ramsey experiments. We implement a protocol to detect parity switching events using single-shot methods, which are interleaved within a Ramsey measurement. We find that events that remain in the same parity state have a higher T2 than measurements averaged over both parities. Our results show that transmons can be limited by charge-noise, even with EJ/EC≈50. Consequently, parity flip rates must be considered as a device characterization metric.