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arXiv:2502.18304 · Physical Review Letters

Josephson Junction Tuning Described by Depinning Physics

Oscar W. Kennedy, Jared H. Cole, Connor D. Shelly

Published Oct 7, 2025• 3 citations
arXivHTMLPDF

Abstract

Superconducting quantum computers leverage superconducting qubits, systems with well-defined energy levels, the spacing of which is determined by the properties of embedded Josephson junctions. Indeterminacy of Josephson junction manufacturing limits large-scale superconducting circuits; however, junction-by-junction tuning affords the possibility of an order of magnitude improvement of determinacy-although the origin of this tuning effect is uncertain. Understanding how tuning techniques may physically modify the tunnel barrier of a Josephson junction is important and will enable these techniques to be optimized. We develop a model of junction tuning based on depinning theory to interpret a phase diagram of the tuning rate. We extract the dependence on temperature, time-varying voltages, and oscillation frequency. Comparing the effect of junction tuning on room-temperature I-V's, electrical breakdown, and frequency of higher-energy levels of transmon qubits indicates that the tuning process leaves the barrier thickness unchanged but modifies its composition.

DOI
10.1103/xkqs-grnd

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Superconducting quantum computers leverage superconducting qubits, systems with well-defined energy levels, the spacing of which is determined by the properties of embedded Josephson junctions. Indeterminacy of Josephson junction manufacturing limits large-scale superconducting circuits; however, junction-by-junction tuning affords the possibility of an order of magnitude improvement of determinacy-although the origin of this tuning effect is uncertain. Understanding how tuning techniques may physically modify the tunnel barrier of a Josephson junction is important and will enable these techniques to be optimized. We develop a model of junction tuning based on depinning theory to interpret a phase diagram of the tuning rate. We extract the dependence on temperature, time-varying voltages, and oscillation frequency. Comparing the effect of junction tuning on room-temperature I-V's, electrical breakdown, and frequency of higher-energy levels of transmon qubits indicates that the tuning process leaves the barrier thickness unchanged but modifies its composition.
Josephson junctions manufactured to tight tolerances are necessary components for superconducting quantum computing. Developing precise manufacturing techniques for Josephson junctions requires an understanding of their make-up and robust feedback metrics against which to optimize. Here, we consider complementary techniques and assess what conclusions they allow us to draw about the barriers in junctions. Monte Carlo simulations of barriers show that standard deviations of 15–20% of the total barrier thickness are compatible with our experimental data. Electrical breakdown allows us to probe the weakest points in barriers. Narrowing the distribution of this breakdown provides a promising feedback mechanism for barrier optimisation. Grouping junctions by breakdown voltage allows us to identify sub-ensembles of junctions with different median resistance. Transmission electron microscopy can be used to find average barrier thickness, although we highlight challenges in forming robust conclusions on the distribution of thicknesses in a barrier from these experiments.
Josephson junctions are key elements of superconducting quantum technology, serving as the core building blocks of superconducting qubits. We present an experimental study on room-temperature electrical tuning of aluminum junctions, showing that voltage pulses can controllably increase their resistance and adjust the Josephson energy while maintaining qubit quality factors above 1 million. We find that the rate of resistance increase scales exponentially with pulse amplitude during manipulation. Following the manipulation, the resistance increases spontaneously through contributions proportional to both the initial resistance and the preceding manipulation. We show that this spontaneous increase halts at cryogenic temperatures, and resumes again at room temperature. Using our stepwise protocol, we achieve up to a 270% increase in junction resistance, corresponding to a reduction of nearly 2 GHz of the qubit transition frequency. These results establish the achievable range, relaxation behavior, and practical limits of electrical tuning, enabling post-fabrication mitigation of frequency crowding in quantum processors.
Superconductor qubits typically use aluminum–aluminum oxide tunnel junctions to provide the nonlinear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We use InAs semiconductor nanowires coated with thin superconducting shells of β-Sn to realize transmon qubits. By tuning the Josephson energy with a gate voltage, we adjust the qubit frequency over a range of 3 GHz. The longest energy relaxation time, T 1 = 27 μs, is obtained at the lowest qubit frequencies, while the longest echo dephasing time, T 2 = 1.8 μs, is achieved at higher frequencies. We assess the possible factors limiting coherence times in these devices and discuss steps to enhance performance through improvements in materials fabrication and circuit design.
The Josephson energy EJE_JEJ​ is a key parameter governing the properties of transmon superconducting qubits. In Al/AlOx_xx​/Al junctions, EJE_JEJ​ is set by electron tunneling through an ultrathin oxide barrier and therefore depends exponentially on the atomic structure of the barrier. We compute EJE_JEJ​ by first-principles device modeling based on the NEGF-DFT quantum-transport method, comparing a junction with a crystalline Al2_22​O3_33​ barrier against ten junctions with melt--quenched amorphous Al2_22​O3_33​ barriers of the same thickness. From the Fermi-level transmission and the Ambegaokar--Baratoff relation, we obtain a mean EJ/hE_J/hEJ​/h of 2.782.782.78 GHz for the amorphous ensemble, with a standard deviation of 4.674.674.67 GHz, compared with 0.730.730.73 GHz for the crystalline reference; individual amorphous values span nearly two orders of magnitude. Scattering-state analysis shows that transport is quantum tunneling and that the variability originates from stoichiometric inhomogeneity of the amorphous oxide: Al-rich, low-barrier regions can connect into percolation-like tunneling pathways that strongly enhance the conductance. A realistic 200×200200\times200200×200 nm2^22 junction self-averages over more than 2×1042\times10^42×104 such microscopic regions. These results establish a quantitative atomistic route from oxide microstructure to the superconducting-circuit energy scale EJE_JEJ​.
Abstract Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of O(100 µs) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of ± 30%. Inferring a critical current I c variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in < 3.5% relative standard deviation (RSD) in critical current ( ≡ σ I c / I c ) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm2. Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown σ I c / I c = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having σ I c / I c < 1.0% (equivalent to σ f / f < 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.
Abstract Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the non-equilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.