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arXiv:1909.09165 · Superconductor Science and Technology

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

John Mark Kreikebaum, Kevin P. O’Brien, Alexis Morvan, Irfan A. Siddiqi

Published Apr 29, 2020• 127 citations
arXivHTMLPDF

Abstract

Abstract Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of O(100 µs) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of ± 30%. Inferring a critical current I c variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in < 3.5% relative standard deviation (RSD) in critical current ( ≡ σ I c / I c ) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm2. Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown σ I c / I c = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having σ I c / I c < 1.0% (equivalent to σ f / f < 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.

DOI
10.1088/1361-6668/ab8617

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Abstract The most commonly used physical realization of superconducting qubits for quantum circuits is a transmon. There are a number of superconducting quantum circuits applications, where Josephson junction critical current reproducibility over a chip is crucial. Here, we report on a robust chip scale Al/AlO x /Al junctions fabrication method due to comprehensive study of shadow evaporation and oxidation steps. We experimentally demonstrate the evidence of optimal Josephson junction electrodes thickness, deposition rate and deposition angle, which ensure minimal electrode surface and line edge roughness. The influence of oxidation method, pressure and time on critical current reproducibility is determined. With the proposed method we demonstrate Al/AlO x /Al junction fabrication with the critical current variation (σ/⟨Ic⟩)(\sigma /\langle {I_{c} } \rangle )(σ/⟨Ic​⟩) ( σ / ⟨ I c ⟩ ) less than 3.9% (from 150 × 200 to 150 × 600 nm 2 area) and 7.7% (for 100 × 100 nm 2 area) over 20 × 20 mm 2 chip. Finally, we fabricate separately three 5 × 10 mm 2 chips with 18 transmon qubits (near 4.3 GHz frequency) showing less than 1.9% frequency variation between qubits on different chips. The proposed approach and optimization criteria can be utilized for a robust wafer-scale superconducting qubit circuits fabrication.
The most commonly used physical realization of superconducting qubits for quantum circuits is a transmon. There are a number of superconducting quantum circuits applications, where Josephson junction critical current reproducibility over a chip is crucial. Here, we report on a robust chip scale Al/AlOx/AlAl/AlO_x/AlAl/AlOx​/Al junctions fabrication method due to comprehensive study of shadow evaporation and oxidation steps. We experimentally demonstrate the evidence of optimal Josephson junction electrodes thickness, deposition rate and deposition angle, which ensure minimal electrode surface and line edge roughness. The influence of oxidation method, pressure and time on critical current reproducibility is determined. With the proposed method we demonstrate Al/AlOx/AlAl/AlO_x/AlAl/AlOx​/Al junction fabrication with the critical current variation (σ/Icσ/I_cσ/Ic​) less than 3.9% (from 150×200150\times200150×200 to 150×600150\times600150×600 nm2nm^2nm2 area) and 7.7% (for 100×100100\times100100×100 nm2nm^2nm2 area) over 20×2020\times2020×20 mm2mm^2mm2 chip. Finally, we fabricate separately three 5×105\times105×10 mm2mm^2mm2 chips with 18 transmon qubits (near 4.3 GHz frequency) showing less than 1.9% frequency variation between qubit on different chips. The proposed approach and optimization criteria can be utilized for a robust wafer-scale superconducting qubit circuits fabrication.
Variability in Josephson junction area and resistance remains a central challenge in scaling fixed-frequency superconducting qubit architectures, where resistance fluctuations translate into qubit-frequency dispersion and potential frequency collisions. Here, we present a fabrication strategy that combines large-area process control on 200 mm wafers with chip-level electrical fine-tuning to improve junction-resistance repeatability. Within a central 80 × 80 mm 2 field on 200 mm wafers, the Manhattan-style aluminum junction process yielded relative standard deviations of 5.1–5.2% in junction area (RSD A ) and 5.8–7.2% in room-temperature resistance (RSD R ). Alternating-bias assisted annealing (ABAA) further reduced chip-level RSD R to 1.3% in a chip with all 20 junctions tuned and to 1.7% for 16 tuned junctions in a cryogenically characterized 20-qubit chip. In a cross-chip comparison, the coherence distributions of the ABAA-treated chip and the untreated reference chip overlapped. These results show that large-area feed-forward correction and post-fabrication tuning can improve junction-parameter repeatability in fixed-frequency superconducting circuits.
We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with T1 relaxation times averaging above 50 μs (Q>1.5×106). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. This eliminates a key bottleneck in manufacturing superconducting qubits by reducing the fabrication time and cost. In a study of more than 3600 junctions, we show an average resistance variation of 3.7% on a wafer that contains forty 0.5×0.5-cm2 chips, with junction areas ranging between 0.01 and 0.16 μm2. The average on-chip spread in resistance is 2.7%, with 20 chips varying between 1.4% and 2%. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7%–2.5%. We show that 60%–70% of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
Josephson tunnel junctions represent a key element in superconducting electronics and quantum circuits. For many years, shadow evaporation by means of Dolan-type bridges has been the state-of-the-art for deep sub- micrometer sized structures. Increasing demand in the number of Josephson junctions, e.g. in qubit circuits and travelling wave parametric amplifiers, requests for a wafer-scale fabrication process with precise control of junction parameters and have led to an advanced lift-off technique called Manhattan-type junction technology in recent years. Herein, we report on the development of a 100 mm wafer-scale fabrication technology for deep sub-micrometer sized Al Josephson junctions with linear dimensions down to 180 nm. The critical currentICof the junctions ranges from about 10 to 120 nA scaling with their linear dimensions. Low temperature transport measurements as well as room-temperature characterization has been used forICand process homogeneity determination of series arrays of up to 50 Josephson junctions. We discuss technology parameters such as yield, on-chip and on-wafer reproducibility of the junction's critical currents as well as main process limitations. Moreover, we present experimental results on the characterization of first transmon-type qubits fabricated using this technology.